Jiang; Fengyi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Jiang; Fengyi.The latest application filed is for "method for fabricating ingan-based multi-quantum well layers".

Company Profile

0.32.31

Jiang; Fengyi - Nanchang N/A CN
Jiang; Fengyi - Jiangxi CN
Jiang; Fengyi - Jiang Xi N/A CN
Jiang; Fengyi - Jiangxi Province CN

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method for fabricating InGaN-based multi-quantum well layers Grant 8,461,029 - Jiang , et al. June 11, 2	2013-06-11
Method for fabricating InGaAlN light emitting device on a combined substrate Grant 8,435,816 - Xiong , et al. May 7, 2	2013-05-07
Method for fabricating a p-type semiconductor structure Grant 8,431,936 - Jiang , et al. April 30, 2	2013-04-30
Method for fabricating a low-resistivity ohmic contact to a p-type III-V nitride semiconductor material at low temperature Grant 8,431,475 - Jiang , et al. April 30, 2	2013-04-30
Method for obtaining high-quality boundary for semiconductor devices fabricated on a partitioned substrate Grant 8,426,325 - Wang , et al. April 23, 2	2013-04-23
InGaAIN light-emitting device and manufacturing method thereof Grant 8,384,100 - Jiang , et al. February 26, 2	2013-02-26
Method for fabricating InGaAIN light-emitting diodes with a metal substrate Grant 8,383,438 - Xiong , et al. February 26, 2	2013-02-26
Semiconductor light-emitting device with metal support substrate Grant 8,361,880 - Jiang , et al. January 29, 2	2013-01-29
Semiconductor light-emitting devices for generating arbitrary color Grant 8,354,665 - Jiang , et al. January 15, 2	2013-01-15
METHOD FOR FABRICATING InGaN-BASED MULTI-QUANTUM WELL LAYERS App 20120295422 - Jiang; Fengyi ; et al.	2012-11-22
Method for fabricating robust light-emitting diodes Grant 8,222,063 - Wang , et al. July 17, 2	2012-07-17
Semiconductor Light-emitting Devices For Generating Arbitrary Color App 20120037883 - Jiang; Fengyi ; et al.	2012-02-16
Method For Fabricating An N-type Semiconductor Material Using Silane As A Precursor App 20110298005 - Jiang; Fengyi ; et al.	2011-12-08
Method For Obtaining High-quality Boundary For Semiconductor Devices Fabricated On A Partitioned Substrate App 20110281422 - Wang; Li ; et al.	2011-11-17
Gallium nitride light-emitting device with ultra-high reverse breakdown voltage Grant 8,053,757 - Jiang , et al. November 8, 2	2011-11-08
Method for fabricating high-power light-emitting diode arrays Grant 8,044,416 - Wang , et al. October 25, 2	2011-10-25
LIGHT-EMITTING DEVICE BASED ON STRAIN-ADJUSTABLE InGaAIN FILM App 20110253972 - Xiong; Chuanbing ; et al.	2011-10-20
Semiconductor light-emitting device with a highly reflective ohmic-electrode Grant 7,977,663 - Tang , et al. July 12, 2	2011-07-12
Semiconductor Light-emitting Device With Silicone Protective Layer App 20110147705 - Jiang; Fengyi ; et al.	2011-06-23
Semiconductor Light-emitting Device With Passivation Layer App 20110147704 - Jiang; Fengyi ; et al.	2011-06-23
Method For Fabricating Ingaain Light Emitting Device On A Combined Substrate App 20110143467 - Xiong; Chuanbing ; et al.	2011-06-16
METHOD FOR FABRICATING InGaAIN LIGHT-EMITTING DIODES WITH A METAL SUBSTRATE App 20110140080 - Xiong; Chuanbing ; et al.	2011-06-16
Method For Fabricating Semiconductor Light-emitting Device With Double-sided Passivation App 20110140081 - Jiang; Fengyi ; et al.	2011-06-16
Semiconductor Light-emitting Device With Passivation In P-type Layer App 20110133159 - Jiang; Fengyi ; et al.	2011-06-09
Method For Fabricating Ingan-based Multi-quantum Well Layers App 20110133158 - Jiang; Fengyi ; et al.	2011-06-09
Semiconductor light-emitting device with double-sided passivation Grant 7,943,942 - Jiang , et al. May 17, 2	2011-05-17
Semiconductor light-emitting device and method for making same Grant 7,919,784 - Jiang , et al. April 5, 2	2011-04-05
Method for fabricating high-quality semiconductor light-emitting devices on silicon substrates Grant 7,902,556 - Jiang , et al. March 8, 2	2011-03-08
Method For Fabricating Robust Light-emitting Diodes App 20110049540 - Wang; Li ; et al.	2011-03-03
Method of fabrication InGaAIN film and light-emitting device on a silicon substrate Grant 7,888,779 - Jiang , et al. February 15, 2	2011-02-15
Semiconductor Light-emitting Device With A Highly Reflective Ohmic-electrode App 20110031472 - Tang; Yingwen ; et al.	2011-02-10
Gallium Nitride Light-emitting Device With Ultra-high Reverse Breakdown Voltage App 20110006319 - Jiang; Fengyi ; et al.	2011-01-13
Semiconductor Light-emitting Device With Double-sided Passivation App 20110001120 - Jiang; Fengyi ; et al.	2011-01-06
Method for fabricating highly reflective ohmic contact in light-emitting devices Grant 7,829,359 - Tang , et al. November 9, 2	2010-11-09
Method For Fabricating A Low-resistivity Ohmic Contact To A P-type Iii-v Nitride Semiconductor Material At Low Temperature App 20100219394 - Jiang; Fengyi ; et al.	2010-09-02
Method For Fabricating Highly Reflective Ohmic Contact In Light-emitting Devices App 20100207096 - Tang; Yingwen ; et al.	2010-08-19
Method for fabricating metal substrates with high-quality surfaces Grant 7,758,695 - Xiong , et al. July 20, 2	2010-07-20
Method For Fabricating High-power Light-emitting Diode Arrays App 20100176404 - Wang; Li ; et al.	2010-07-15
InGaAIN light-emitting device containing carbon-based substrate and method for making the same Grant 7,741,632 - Xiong , et al. June 22, 2	2010-06-22
Semiconductor light-emitting device with electrode for N-polar InGaAIN surface Grant 7,705,348 - Wang , et al. April 27, 2	2010-04-27
Semiconductor light-emitting device Grant 7,692,205 - Wang , et al. April 6, 2	2010-04-06
Method for manufacturing indium gallium aluminium nitride thin film on silicon substrate Grant 7,615,420 - Jiang , et al. November 10, 2	2009-11-10
METHOD OF FABRICATION InGaAlN FILM AND LIGHT-EMITTING DEVICE ON A SILICON SUBSTRATE App 20090050927 - Jiang; Fengyi ; et al.	2009-02-26
InGaAlN LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF App 20090026473 - Jiang; Fengyi ; et al.	2009-01-29
Method For Fabricating A P-type Semiconductor Structure App 20080315212 - Jiang; Fengyi ; et al.	2008-12-25
InGaAlN LIGHT-EMITTING DEVICE CONTAINING CARBON-BASED SUBSTRATE AND METHOD FOR MAKING THE SAME App 20080265265 - Xiong; Chuanbing ; et al.	2008-10-30
Method For Obtaining High-quality Boundary For Semiconductor Devices Fabricated On A Partitioned Substrate App 20080261403 - Wang; Li ; et al.	2008-10-23
Semiconductor Light-Emitting Device App 20080246048 - Wang; Li ; et al.	2008-10-09
Method for Manufacturing Indium Gallium Aluminium Nitride Thin Film on Silicon Substrate App 20080248633 - Jiang; Fengyi ; et al.	2008-10-09
Semiconductor Light-Emitting Device with Electrode for N-Polar Ingaain Surface App 20080230792 - Jiang; Fengyi ; et al.	2008-09-25
Semiconductor Light-Emitting Device with Electrode for N-Polar Ingaain Surface App 20080230799 - Wang; Li ; et al.	2008-09-25
Semiconductor Light-Emitting Device With Metal Support Substrate App 20080224154 - Jiang; Fengyi ; et al.	2008-09-18
Method For Fabricating High-Quality Semiconductor Light-Emitting Devices On Silicon Substrates App 20080210951 - Jiang; Fengyi ; et al.	2008-09-04
Method for fabricating metal substrates with high-quality surfaces App 20080166582 - Xiong; Chuanbing ; et al.	2008-07-10

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