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name:-0.0033409595489502
name:-0.0023670196533203
name:-0.0007021427154541
Jia; Zhongyuan Patent Filings

Jia; Zhongyuan

Patent Applications and Registrations

Patent applications and USPTO patent grants for Jia; Zhongyuan.The latest application filed is for "formation of a layer on a semiconductor substrate".

Company Profile
0.7.6
  • Jia; Zhongyuan - Cupertino CA
  • Jia; Zhongyuan - Goleta CA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Formation of a layer on a semiconductor substrate
Grant 10,096,473 - Kelman , et al. October 9, 2
2018-10-09
Planar nonpolar group-III nitride films grown on miscut substrates
Grant 9,828,695 - Hirai , et al. November 28, 2
2017-11-28
Formation Of A Layer On A Semiconductor Substrate
App 20170294306 - Kelman; Maxim ;   et al.
2017-10-12
Planar Nonpolar Group-iii Nitride Films Grown On Miscut Substrates
App 20160230312 - Hirai; Asako ;   et al.
2016-08-11
Planar nonpolar group-III nitride films grown on miscut substrates
Grant 9,340,899 - Hirai , et al. May 17, 2
2016-05-17
Planar Nonpolar Group-iii Nitride Films Grown On Miscut Substrates
App 20140291694 - Hirai; Asako ;   et al.
2014-10-02
Planar nonpolar group-III nitride films grown on miscut substrates
Grant 8,791,000 - Hirai , et al. July 29, 2
2014-07-29
Planar Nonpolar Group-iii Nitride Films Grown On Miscut Substrates
App 20140138679 - Hirai; Asako ;   et al.
2014-05-22
Planar nonpolar group-III nitride films grown on miscut substrates
Grant 8,691,671 - Hirai , et al. April 8, 2
2014-04-08
Planar Nonpolar Group-iii Nitride Films Grown On Miscut Substrates
App 20120175739 - HIRAI; Asako ;   et al.
2012-07-12
Planar nonpolar m-plane group III nitride films grown on miscut substrates
Grant 8,158,497 - Hirai , et al. April 17, 2
2012-04-17
PLANAR NONPOLAR m-PLANE GROUP III NITRIDE FILMS GROWN ON MISCUT SUBSTRATES
App 20080308907 - Hirai; Asako ;   et al.
2008-12-18

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