Jhaveri; Ritesh

Patent Applications and Registrations

Patent applications and USPTO patent grants for Jhaveri; Ritesh.The latest application filed is for "advanced etching technologies for straight, tall and uniform fins across multiple fin pitch structures".

Company Profile

9.11.15

Jhaveri; Ritesh - Hillsboro OR
Jhaveri; Ritesh - Portland OR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Advanced etching technologies for straight, tall and uniform fins across multiple fin pitch structures Grant 11,417,531 - Ambati , et al. August 16, 2	2022-08-16
Transistors employing non-selective deposition of source/drain material Grant 11,101,268 - Jambunathan , et al. August 24, 2	2021-08-24
Advanced Etching Technologies For Straight, Tall And Uniform Fins Across Multiple Fin Pitch Structures App 20210183658 - AMBATI; Muralidhar S. ; et al.	2021-06-17
Techniques for increasing channel region tensile strain in n-MOS devices Grant 11,011,620 - Mehandru , et al. May 18, 2	2021-05-18
Advanced etching technologies for straight, tall and uniform fins across multiple fin pitch structures Grant 10,950,453 - Ambati , et al. March 16, 2	2021-03-16
Advanced Etching Technologies For Straight, Tall And Uniform Fins Across Multiple Fin Pitch Structures App 20200227266 - AMBATI; Muralidhar S. ; et al.	2020-07-16
Metal To Source/drain Contact Area Using Thin Nucleation Layer And Sacrificial Epitaxial Film App 20200161440 - Jhaveri; Ritesh ; et al.	2020-05-21
Advanced etching technologies for straight, tall and uniform fins across multiple fin pitch structures Grant 10,643,855 - Ambati , et al.	2020-05-05
Arsenic-doped Epitaxial Source/drain Regions For Nmos App 20200105754 - Murthy; Anand ; et al.	2020-04-02
Transistors Employing Non-selective Deposition Of Source/drain Material App 20190355721 - JAMBUNATHAN; KARTHIK ; et al.	2019-11-21
Techniques For Increasing Channel Region Tensile Strain In N-mos Devices App 20190207015 - MEHANDRU; RISHABH ; et al.	2019-07-04
Advanced Etching Technologies For Straight, Tall And Uniform Fins Across Multiple Fin Pitch Structures App 20190131138 - AMBATI; Muralidhar S. ; et al.	2019-05-02
Advanced etching technologies for straight, tall and uniform fins across multiple fin pitch structures Grant 10,204,794 - Ambati , et al. Feb	2019-02-12
Techniques for trench isolation using flowable dielectric materials Grant 10,147,634 - Jhaveri , et al. De	2018-12-04
Resistance Reduction Under Transistor Spacers App 20180240874 - WEBER; CORY E. ; et al.	2018-08-23
Fin structure having hard mask etch stop layers underneath gate sidewall spacers Grant 9,923,054 - Jhaveri , et al. March 20, 2	2018-03-20
Techniques For Trench Isolation Using Flowable Dielectric Materials App 20160343609 - JHAVERI; Ritesh ; et al.	2016-11-24
Advanced Etching Technologies For Straight, Tall And Uniform Fins Across Multiple Fin Pitch Structures App 20160300725 - AMBATI; Muralidhar S. ; et al.	2016-10-13
Techniques for trench isolation using flowable dielectric materials Grant 9,406,547 - Jhaveri , et al. August 2, 2	2016-08-02
Method Of Forming A Semiconductor Device With Tall Fins And Using Hard Mask Etch Stops App 20150287779 - Jhaveri; Ritesh ; et al.	2015-10-08
Techniques For Trench Isolation Using Flowable Dielectric Materials App 20150179501 - Jhaveri; Ritesh ; et al.	2015-06-25
Method of forming a semiconductor device with tall fins and using hard mask etch stops Grant 9,048,260 - Jhaveri , et al. June 2, 2	2015-06-02
Hard Mask Etch Stop For Tall Fins App 20140191300 - Jhaveri; Ritesh ; et al.	2014-07-10

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