Jewett; David N.
Patent Applications and Registrations
Patent applications and USPTO patent grants for Jewett; David N..The latest application filed is for "system for growth of single crystal materials with extreme uniformity in their structural and electrical properties".
- Jewett; David N. - Harvard MA
| Patent | Date |
|---|---|
| System for growth of single crystal materials with extreme uniformity in their structural and electrical properties Grant 4,659,421 - Jewett April 21, 1 | 1987-04-21 |
| Guidance system for low angle silicon ribbon growth Grant 4,599,132 - Jewett , et al. July 8, 1 | 1986-07-08 |
| Method and apparatus for producing crystalline ribbons Grant 4,289,571 - Jewett September 15, 1 | 1981-09-15 |
| Apparatus for producing semiconductor grade silicon and replenishing the melt of a crystal growth system Grant 4,265,859 - Jewett May 5, 1 | 1981-05-05 |
| Method and apparatus for reducing residual stresses in crystals Grant 4,158,038 - Jewett June 12, 1 | 1979-06-12 |
| Manufacture of silicon on the inside of a tube Grant 4,123,989 - Jewett November 7, 1 | 1978-11-07 |
| Cartridge and furnace for crystal growth Grant 4,118,197 - Mackintosh , et al. October 3, 1 | 1978-10-03 |
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