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name:-0.012333154678345
name:-0.0057809352874756
name:-0.0069139003753662
Jessen; Gregg H Patent Filings

Jessen; Gregg H

Patent Applications and Registrations

Patent applications and USPTO patent grants for Jessen; Gregg H.The latest application filed is for "iii-nitride thermal management based on aluminum nitride substrates".

Company Profile
5.4.8
  • Jessen; Gregg H - Beavercreek OH
  • Jessen; Gregg H. - Nashua NH
  • Jessen; Gregg H. - Beavercreek OH
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Self-aligned gate and drift design for high-critical field strength semiconductor power transistors with ion implantation
Grant 11,398,551 - Chabak , et al. July 26, 2
2022-07-26
Iii-nitride Thermal Management Based On Aluminum Nitride Substrates
App 20220115524 - Jessen; Gregg H.
2022-04-14
Self-Aligned Gate and Drift Design for High-Critical Field Strength Semiconductor Power Transistors with Ion Implantation
App 20210234001 - Chabak; Kelson D. ;   et al.
2021-07-29
Metal Oxide Thin Film Semiconductor Device Monolithically Integrated With Dissimilar Device on the Same Wafer
App 20210057454 - Schuette; Michael L. ;   et al.
2021-02-25
Metal oxide thin film semiconductor device monolithically integrated with dissimilar device on the same wafer
Grant 10,930,676 - Schuette , et al. February 23, 2
2021-02-23
Self-Aligned Gate and Drift Design for High-Critical Field Strength Semiconductor Power Transistors with Ion Implantation
App 20200357887 - Chabak; Kelson D ;   et al.
2020-11-12
Highly integrated RF power and power conversion based on Ga2O3 technology
Grant 10,784,245 - Jessen Sept
2020-09-22
Metal Oxide Thin Film Semiconductor Device Monolithically Integrated With Dissimilar Device on the Same Wafer
App 20200135769 - Schuette; Michael L. ;   et al.
2020-04-30
Highly integrated RF power and power conversion based on Ga2O3 technology
Grant 10,461,068 - Jessen Oc
2019-10-29
Highly Integrated RF Power and Power Conversion Based on Ga2O3 Technology
App 20190296000 - Jessen; Gregg H
2019-09-26
Highly Integrated RF Power and Power Conversion Based on Ga2O3 Technology
App 20180269194 - Jessen; Gregg H.
2018-09-20
Metal Oxide Thin Film Semiconductor Device Monolithically Integrated With Dissimilar Device on the Same Wafer
App 20180254290 - Schuette; Michael L. ;   et al.
2018-09-06

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