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Artificial neuron semiconductor element having three-dimensional structure and artificial neuron semiconductor system using same
Grant 10,014,348 - Song , et al. July 3, 2 | 2018-07-03 |
Artificial Neuron Semiconductor Element Having Three-dimensional Structure And Artificial Neuron Semiconductor System Using Same
App 20170221966 - SONG; Yun Heub ; et al. | 2017-08-03 |
Multi-bit phase change memory devices
Grant 8,320,170 - Hwang , et al. November 27, 2 | 2012-11-27 |
Methods of forming phase-change memory units, and methods of manufacturing phase-change memory devices using the same
Grant 8,043,924 - Ryoo , et al. October 25, 2 | 2011-10-25 |
Memory device employing NVRAM and flash memory cells
Grant 7,916,538 - Jeon , et al. March 29, 2 | 2011-03-29 |
Memory devices with selective pre-write verification and methods of operation thereof
Grant 7,843,741 - Jeong , et al. November 30, 2 | 2010-11-30 |
Multi-bit phase change memory devices
App 20100220520 - Hwang; Young-nam ; et al. | 2010-09-02 |
Phase-changeable memory device and method of manufacturing the same
Grant 7,700,430 - Yang , et al. April 20, 2 | 2010-04-20 |
Phase-Changeable Fuse Elements and Memory Devices Containing Phase-Changeable Fuse Elements and Memory Cells Therein
App 20100072453 - Jeong; Hong-sik ; et al. | 2010-03-25 |
Memory Devices With Selective Pre-write Verification And Methods Of Operation Thereof
App 20090285008 - Jeong; Hong-Sik ; et al. | 2009-11-19 |
Methods Of Forming Phase-change Memory Units, And Methods Of Manufacturing Phase-change Memory Devices Using The Same
App 20090258477 - Ryoo; Kyung Chang ; et al. | 2009-10-15 |
Resistive Memory Devices
App 20090230378 - Ryoo; Kyung-Chang ; et al. | 2009-09-17 |
Magnetic random access memory cells having split subdigit lines having cladding layers thereon and methods of fabricating the same
Grant 7,569,401 - Park , et al. August 4, 2 | 2009-08-04 |
Memory device employing NVRAM and flash memory cells
App 20090190401 - Jeon; Byung-gil ; et al. | 2009-07-30 |
Semiconductor device having multilayer interconnection structure and manufacturing method thereof
Grant 7,510,963 - Yang , et al. March 31, 2 | 2009-03-31 |
Semiconductor memory device and method for manufacturing the same
Grant 7,462,523 - Yang , et al. December 9, 2 | 2008-12-09 |
Magnetic Random Access Memory Cells Having Split Subdigit Lines Having Cladding Layers Thereon and Methods of Fabricating the Same
App 20080160643 - Park; Jae-Hyun ; et al. | 2008-07-03 |
Phase-changeable memory device and method of manufacturing the same
App 20080026535 - Yang; Soo-Guil ; et al. | 2008-01-31 |
Methods of manufacturing integrated circuit devices having an encapsulated insulation layer
Grant 7,300,888 - Jeong , et al. November 27, 2 | 2007-11-27 |
Phase-changeable memory device and method of manufacturing the same
Grant 7,295,463 - Yang , et al. November 13, 2 | 2007-11-13 |
Methods of operating magnetic random access memory device using spin injection and related devices
Grant 7,164,598 - Jeong , et al. January 16, 2 | 2007-01-16 |
Methods of operating magnetic random access memory device using spin injection and related devices
App 20060034117 - Jeong; Won-Cheol ; et al. | 2006-02-16 |
Magnetic random access memory cells having split sub-digit lines having cladding layers thereon and methods of fabricating the same
App 20050205952 - Park, Jae-Hyun ; et al. | 2005-09-22 |
Phase-changeable memory device and method of manufacturing the same
App 20050185444 - Yang, Soo-Guil ; et al. | 2005-08-25 |
Semiconductor memory device and method for manufacturing the same
App 20050167717 - Yang, Won-Suk ; et al. | 2005-08-04 |
Semiconductor memory device and method for manufacturing the same
Grant 6,900,546 - Yang , et al. May 31, 2 | 2005-05-31 |
Semiconductor device having multilayer interconnection structure and manufacturing method thereof
App 20050070094 - Yang, Won-suk ; et al. | 2005-03-31 |
Semiconductor device having multilayer interconnection structure and manufacturing method thereof
Grant 6,836,019 - Yang , et al. December 28, 2 | 2004-12-28 |
Method for manufacturing semiconductor device having increased effective channel length
Grant 6,815,300 - Jeong , et al. November 9, 2 | 2004-11-09 |
Bit line landing pad and borderless contact on bit line stud with localized etch stop layer formed in void region, and manufacturing method thereof
Grant 6,812,572 - Yang , et al. November 2, 2 | 2004-11-02 |
Bit line pad and borderless contact on bit line stud with localized etch stop layer formed in an undermined region
Grant 6,787,906 - Yang , et al. September 7, 2 | 2004-09-07 |
Bit line landing pad and borderless contact on bit line stud with localized etch stop layer and manufacturing method thereof
Grant 6,764,941 - Yang , et al. July 20, 2 | 2004-07-20 |
Methods of forming spin on glass layers by curing remaining portions thereof
Grant 6,720,276 - Cho , et al. April 13, 2 | 2004-04-13 |
Method for manufacturing a semiconductor device including storage nodes of capacitor
Grant 6,656,790 - Jang , et al. December 2, 2 | 2003-12-02 |
Bit line landing pad and borderless contact on bit line stud with localized etch stop layer formed in void region, and manufacturing method thereof
App 20030214022 - Yang, Won-Suk ; et al. | 2003-11-20 |
Method for manufacturing semiconductor device having increased effective channel length
App 20030216004 - Jeong, Hong-Sik ; et al. | 2003-11-20 |
Bit line landing pad and borderless contact on bit line stud with localized etch stop layer and manufacturing method thereof
App 20030123305 - Yang, Won-Suk ; et al. | 2003-07-03 |
Bit line landing pad and borderless contact on bit line stud with localized etch stop layer and manufacturing method thereof
Grant 6,518,671 - Yang , et al. February 11, 2 | 2003-02-11 |
Semiconductor device including storage nodes of capacitor and method for manufacturing the same
App 20020160550 - Jang, Se-myeong ; et al. | 2002-10-31 |
Semiconductor memory device and method for manufacturing the same
App 20020123193 - Yang, Won-Suk ; et al. | 2002-09-05 |
Methods of forming spin on glass layers by curing remaining portions thereof
App 20020111032 - Cho, Min-Hee ; et al. | 2002-08-15 |
Semiconductor device having multilayer interconnection structure and manfacturing method thereof
App 20020105088 - Yang, Won-suk ; et al. | 2002-08-08 |
Methods of manufacturing integrated circuit devices having an encapsulated insulation layer
App 20020072250 - Jeong, Hong-Sik ; et al. | 2002-06-13 |
Bit line landing pad and borderless contact on bit line stud with etch stop layer and manufacturing method thereof
Grant 6,350,649 - Jeong , et al. February 26, 2 | 2002-02-26 |
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