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Methods Of Forming A Capacitor Structure And Methods Of Manufacturing A Semiconductor Device Using The Same App 20110124176 - Lim; Han-Jin ;   et al. | 2011-05-26 |
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Methods of forming different gate structures in NMOS and PMOS regions and gate structures so formed Grant 7,399,670 - Jeon , et al. July 15, 2 | 2008-07-15 |
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Method of manufacturing a semiconductor device having a tungsten carbon nitride layer App 20070128775 - Jeon; Taek-Soo ;   et al. | 2007-06-07 |
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Method of manufacturing a semiconductor device having a dual gate structure App 20070082415 - Jeon; Taek-Soo ;   et al. | 2007-04-12 |
Method of forming a tantalum carbon nitride layer and method of manufacturing a semiconductor device using the same App 20070059929 - Cho; Hag-Ju ;   et al. | 2007-03-15 |
Non-volatile semiconductor devices and methods of manufacturing the same App 20070026621 - Cho; Hag-Ju ;   et al. | 2007-02-01 |
Gate electrode structure and method of forming the same, and semiconductor transistor having the gate electrode structure and method of manufacturing the same App 20070026596 - Cho; Hag-Ju ;   et al. | 2007-02-01 |
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Methods of forming different gate structures in NMOS and PMOS regions and gate structures so formed App 20060030097 - Jeon; Taek-Soo ;   et al. | 2006-02-09 |
Methods of forming an oxide layer in a transistor having a recessed gate Grant 6,930,062 - Hyun , et al. August 16, 2 | 2005-08-16 |
Methods of forming an oxide layer in a transistor having a recessed gate App 20050003679 - Hyun, Sang-Jin ;   et al. | 2005-01-06 |