Jeon; In-Sang

Patent Applications and Registrations

Patent applications and USPTO patent grants for Jeon; In-Sang.The latest application filed is for "precursor composition for deposition of silicon dioxide film and method for fabricating semiconductor device using the same".

Company Profile

0.11.16

Jeon; In-Sang - Seoul KR
Jeon; In-Sang - Gyeonggi-do KR
Jeon; In-sang - Kyungki-do KR
Jeon, In-Sang - Suwon-city KR
Jeon; In-sang - Suwon KR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Precursor composition for deposition of silicon dioxide film and method for fabricating semiconductor device using the same Grant 9,230,922 - Lim , et al. January 5, 2	2016-01-05
Precursor Composition For Deposition Of Silicon Dioxide Film And Method For Fabricating Semiconductor Device Using The Same App 20140264778 - LIM; Han-Jin ; et al.	2014-09-18
Method of manufacturing semiconductor device Grant 8,748,254 - Lee , et al. June 10, 2	2014-06-10
Method Of Manufacturing Semiconductor Device App 20130052787 - Lee; Kwang-wook ; et al.	2013-02-28
Storage Container And Refrigerator Having The Same App 20120153796 - HAN; Jeong Su ; et al.	2012-06-21
Methods of manufacturing semiconductor devices having low resistance buried gate structures Grant 8,168,521 - Jeon , et al. May 1, 2	2012-05-01
Methods of Manufacturing Semiconductor Devices Having Low Resistance Buried Gate Structures App 20100240180 - Jeon; In-Sang ; et al.	2010-09-23
Semiconductor Device Having Recess Channel Structure App 20100213541 - Jeon; In-sang ; et al.	2010-08-26
Memory devices and methods of manufacturing the same Grant 7,692,196 - Jeon , et al. April 6, 2	2010-04-06
Non-volatile memory device and method of forming the same App 20090134448 - Jeon; Taek-Soo ; et al.	2009-05-28
Memory devices and methods of manufacturing the same App 20080164508 - Jeon; In-Sang ; et al.	2008-07-10
Semiconductor Devices Having Transistors with Different Gate Structures and Related Methods App 20080116530 - Hyun; Sang-jin ; et al.	2008-05-22
Gate electrode, method of forming the same, transistor having the gate electrode, method of manufacturing the same, semiconductor device having the gate electrode and method of manufacturing the same App 20070063295 - Jeon; In-Sang ; et al.	2007-03-22
MOS semiconductor devices having polysilicon gate electrodes and high dielectric constant gate dielectric layers and methods of manufacturing such devices App 20070032008 - Kim; Hye-Min ; et al.	2007-02-08
Semiconductor devices having metal layers as barrier layers on upper or lower electrodes of capacitors Grant 6,590,251 - Kang , et al. July 8, 2	2003-07-08
Method of delivering gas into reaction chamber and shower head used to deliver gas App 20030000473 - Chae, Yun-Sook ; et al.	2003-01-02
Method of delivering gas into reaction chamber and shower head used to deliver gas Grant 6,478,872 - Chae , et al. November 12, 2	2002-11-12
Method for forming metal layer of semiconductor device using metal halide gas Grant 6,458,701 - Chae , et al. October 1, 2	2002-10-01
Method of manufacturing a barrier metal layer using atomic layer deposition App 20020081844 - Jeon, In-Sang ; et al.	2002-06-27
Method of manufacturing a barrier metal layer using atomic layer deposition Grant 6,399,491 - Jeon , et al. June 4, 2	2002-06-04
Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same Grant 6,348,376 - Lim , et al. February 19, 2	2002-02-19
Semiconductor devices having metal layers as barrier layers on upper or lower electrodes of capacitors App 20020000598 - Kang, Sang-Bom ; et al.	2002-01-03
Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same App 20010034097 - Lim, Hyun-Seok ; et al.	2001-10-25
Method of manufacturing a barrier metal layer using atomic layer deposition App 20010034123 - Jeon, In-Sang ; et al.	2001-10-25
Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor Grant 6,287,965 - Kang , et al. September 11, 2	2001-09-11

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