Jenny; Jason Ronald

Patent Applications and Registrations

Patent applications and USPTO patent grants for Jenny; Jason Ronald.The latest application filed is for "one hundred millimeter single crystal silicon carbide wafer".

Company Profile

0.10.11

Jenny; Jason Ronald - Wake Forest NC US
Jenny; Jason Ronald - Raleigh NC

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method for producing semi-insulating resistivity in high purity silicon carbide crystals Grant 9,059,118 - Jenny , et al. June 16, 2	2015-06-16
One hundred millimeter single crystal silicon carbide wafer Grant 8,147,991 - Jenny , et al. April 3, 2	2012-04-03
One Hundred Millimeter Single Crystal Silicon Carbide Wafer App 20110024766 - Jenny; Jason Ronald ; et al.	2011-02-03
Method for Producing Semi-Insulating Resistivity in High Purity Silicon Carbide Crystals App 20090256162 - Jenny; Jason Ronald ; et al.	2009-10-15
One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer Grant 7,601,441 - Jenny , et al. October 13, 2	2009-10-13
Apparatus and method for the production of bulk silicon carbide single crystals Grant 7,323,052 - Tsvetkov , et al. January 29, 2	2008-01-29
Double side polished wafer scratch inspection tool Grant 7,319,518 - Leonard , et al. January 15, 2	2008-01-15
Seeded single crystal silicon carbide growth and resulting crystals Grant 7,316,747 - Jenny , et al. January 8, 2	2008-01-08
Apparatus And Method For The Production Of Bulk Silicon Carbide Single Crystals App 20070283880 - Tsvetkov; Valeri F. ; et al.	2007-12-13
Double side polished wafer scratch inspection tool App 20070081150 - Leonard; Robert Tyler ; et al.	2007-04-12
Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen Grant 7,147,715 - Malta , et al. December 12, 2	2006-12-12
Seeded single crystal silicon carbide growth and resulting crystals App 20060213430 - Jenny; Jason Ronald ; et al.	2006-09-28
Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby Grant 6,974,720 - Sumakeris , et al. December 13, 2	2005-12-13
Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen App 20050145164 - Malta, David Phillip ; et al.	2005-07-07
One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer App 20050126471 - Jenny, Jason Ronald ; et al.	2005-06-16
Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby App 20050082542 - Sumakeris, Joseph John ; et al.	2005-04-21
Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen App 20050022724 - Malta, David Phillip ; et al.	2005-02-03
Method for producing semi-insulating resistivity in high purity silicon carbide crystals Grant 6,814,801 - Jenny , et al. November 9, 2	2004-11-09
Method for producing semi-insulating resistivity in high purity silicon carbide crystals App 20040206298 - Jenny, Jason Ronald ; et al.	2004-10-21
Method for producing semi-insulating resistivity in high purity silicon carbide crystals App 20030233975 - Jenny, Jason Ronald ; et al.	2003-12-25

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