Jeng; Shwangming

Patent Applications and Registrations

Patent applications and USPTO patent grants for Jeng; Shwangming.The latest application filed is for "solution to black diamond film delamination problem".

Company Profile

0.10.2

Jeng; Shwangming - Hsin-chiu TW
Jeng; Shwangming - Hsin-Chu TW
Jeng; Shwangming - Taiwan TW

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method of cleaning a copper/porous low-k dual damascene etch Grant 6,457,477 - Young , et al. October 1, 2	2002-10-01
Method for making low-resistance silicide contacts between closely spaced electrically conducting lines for field effect transistors Grant 6,451,701 - Wang , et al. September 17, 2	2002-09-17
Solution to black diamond film delamination problem App 20020094698 - Li, Lain-Jong ; et al.	2002-07-18
Multiple chamber vacuum processing system configuration for improving the stability of mark shielding process App 20020084032 - Jeng, Shwangming ; et al.	2002-07-04
Solution to black diamond film delamination problem Grant 6,358,839 - Li , et al. March 19, 2	2002-03-19
Method for monitoring alignment mark shielding Grant 6,277,658 - Jeng , et al. August 21, 2	2001-08-21
Method of protecting a low-K dielectric material Grant 6,268,294 - Jang , et al. July 31, 2	2001-07-31
Process for low-k dielectric with dummy plugs Grant 6,258,715 - Yu , et al. July 10, 2	2001-07-10
Thermal annealing method for forming metal silicide layer Grant 6,251,777 - Jeng , et al. June 26, 2	2001-06-26
Method for forming gap filling silicon oxide intermetal dielectric (IMD) layer formed employing ozone-tEOS Grant 6,143,673 - Jang , et al. November 7, 2	2000-11-07
Method of removing tungsten near the wafer edge after CMP Grant 6,121,111 - Jang , et al. September 19, 2	2000-09-19
Formation of thin spacer at corner of shallow trench isolation (STI) Grant 6,080,638 - Lin , et al. June 27, 2	2000-06-27

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