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Patent applications and USPTO patent grants for Japan Silicon Co., Ltd..The latest application filed is for "method for polishing a silicon wafer using a ceramic polishing surface having a maximum surface roughness less than 0.02 microns".
Patent | Date |
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Method for polishing a silicon wafer using a ceramic polishing surface having a maximum surface roughness less than 0.02 microns Grant 5,096,854 - Saito , et al. March 17, 1 | 1992-03-17 |
Method and apparatus for growing silicon crystals Grant 4,981,549 - Yamashita , et al. January 1, 1 | 1991-01-01 |
Polishing apparatus Grant 4,897,966 - Takahashi February 6, 1 | 1990-02-06 |
Method of producing wafer Grant 4,756,796 - Saitou July 12, 1 | 1988-07-12 |
Lateral pulling growth of crystal ribbons and apparatus therefor Grant 4,226,834 - Shudo , et al. October 7, 1 | 1980-10-07 |
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