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name:-0.01990008354187
name:-0.016398906707764
name:-0.011947154998779
Jantscher; Wolfgang Patent Filings

Jantscher; Wolfgang

Patent Applications and Registrations

Patent applications and USPTO patent grants for Jantscher; Wolfgang.The latest application filed is for "silicon carbide device with transistor cell and clamp regions in a well region".

Company Profile
12.10.16
  • Jantscher; Wolfgang - Villach AT
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Silicon Carbide Device With Transistor Cell And Clamp Region
App 20220102549 - Weyers; Joachim ;   et al.
2022-03-31
Silicon Carbide Device With Transistor Cell And Clamp Regions In A Well Region
App 20220102487 - Siemieniec; Ralf ;   et al.
2022-03-31
Silicon Carbide Device With Trench Gate Structure
App 20220085186 - Siemieniec; Ralf ;   et al.
2022-03-17
Semiconductor Device Including Trench Gate Structure And Buried Shielding Region And Method Of Manufacturing
App 20210408279 - Siemieniec; Ralf ;   et al.
2021-12-30
Silicon carbide device with trench gate structure and method of manufacturing
Grant 11,211,468 - Siemieniec , et al. December 28, 2
2021-12-28
Method For Producing A Transistor Device Having A Superjunction Structure
App 20210193796 - Hirler; Franz ;   et al.
2021-06-24
Methods for Manufacturing a MOSFET
App 20210151584 - Riegler; Andreas ;   et al.
2021-05-20
Method for forming a superjunction transistor device
Grant 10,971,582 - Hirler , et al. April 6, 2
2021-04-06
Methods for manufacturing a MOSFET
Grant 10,903,341 - Riegler , et al. January 26, 2
2021-01-26
Silicon Carbide Device with Trench Gate Structure and Method of Manufacturing
App 20200312979 - Siemieniec; Ralf ;   et al.
2020-10-01
Method for Forming a Superjunction Transistor Device
App 20200044019 - Hirler; Franz ;   et al.
2020-02-06
SiC-based superjunction semiconductor device
Grant 10,541,301 - Schulze , et al. Ja
2020-01-21
Forming recombination centers in a semiconductor device
Grant 10,347,491 - Jantscher , et al. July 9, 2
2019-07-09
Semiconductor wafer and method of manufacturing semiconductor devices in a semiconductor wafer
Grant 10,269,896 - Weber , et al.
2019-04-23
Methods for Manufacturing a MOSFET
App 20190081158 - Riegler; Andreas ;   et al.
2019-03-14
Forming Recombination Centers in a Semiconductor Device
App 20180182629 - Jantscher; Wolfgang ;   et al.
2018-06-28
SiC-Based Superjunction Semiconductor Device
App 20180138266 - Schulze; Hans-Joachim ;   et al.
2018-05-17
SiC-based superjunction semiconductor device
Grant 9,859,361 - Schulze , et al. January 2, 2
2018-01-02
Semiconductor Device with Field Dielectric in an Edge Area
App 20170373140 - Hirler; Franz ;   et al.
2017-12-28
VDMOS having a non-depletable extension zone formed between an active area and side surface of semiconductor body
Grant 9,773,863 - Hirler , et al. September 26, 2
2017-09-26
Semiconductor Wafer and Method of Manufacturing Semiconductor Devices in a Semiconductor Wafer
App 20170243938 - Weber; Hans ;   et al.
2017-08-24
Semiconductor wafer and method of manufacturing semiconductor devices in a semiconductor wafer
Grant 9,653,540 - Weber , et al. May 16, 2
2017-05-16
Semiconductor Wafer and Method of Manufacturing Semiconductor Devices in a Semiconductor Wafer
App 20160329398 - Weber; Hans ;   et al.
2016-11-10
SiC-Based Superjunction Semiconductor Device
App 20160233295 - Schulze; Hans-Joachim ;   et al.
2016-08-11
Semiconductor Device With Field Dielectric In An Edge Area
App 20150333168 - Hirler; Franz ;   et al.
2015-11-19
Method of manufacturing a semiconductor device including proton irradiation and semiconductor device including charge compensation structure
Grant 9,012,980 - Schulze , et al. April 21, 2
2015-04-21

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