Jang; Jeng-Hsing
Patent Applications and Registrations
Patent applications and USPTO patent grants for Jang; Jeng-Hsing.The latest application filed is for "vertical mosfet electrostatic discharge device".
- Jang; Jeng-Hsing - Taoyuan County TW
- Jang; Jeng Hsing - Kaohsiung N/A TW
- Jang; Jeng Hsing - Kaohsiung City TW
| Patent | Date |
|---|---|
| Vertical MOSFET electrostatic discharge device Grant 9,054,131 - Jang , et al. June 9, 2 | 2015-06-09 |
| Wafer scrubber Grant 8,916,003 - Jang , et al. December 23, 2 | 2014-12-23 |
| Circuit structure with conductive and depletion regions to form tunable capacitors and resistors Grant 8,604,542 - Jang , et al. December 10, 2 | 2013-12-10 |
| Circuit structure with vertical double gate Grant 8,476,704 - Jang , et al. July 2, 2 | 2013-07-02 |
| Vertical Mosfet Electrostatic Discharge Device App 20130099309 - Jang; Jeng-Hsing ; et al. | 2013-04-25 |
| Method For Fabricating Integrated Devices With Reducted Plasma Damage App 20130078804 - JANG; Jeng-Hsing ; et al. | 2013-03-28 |
| Wafer Scrubber App 20130074878 - Jang; Jeng-Hsing ; et al. | 2013-03-28 |
| Method For Forming Dope Regions With Rapid Thermal Process App 20130078774 - Jang; Jeng-Hsing ; et al. | 2013-03-28 |
| Wafer Scrubber Apparatus App 20130068264 - Jang; Jeng-Hsing ; et al. | 2013-03-21 |
| Circuit Structure with Resistors or Capacitors App 20130049846 - Jang; Jeng Hsing ; et al. | 2013-02-28 |
| Circuit Structure with Vertical Double Gate App 20130043529 - Jang; Jeng Hsing ; et al. | 2013-02-21 |
| Self-aligned method for forming contact of device with reduced step height Grant 8,367,509 - Jang , et al. February 5, 2 | 2013-02-05 |
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