| Patent | Date |
|---|
Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM)
Grant 11,417,835 - Iwata , et al. August 16, 2 | 2022-08-16 |
High Thermal Stability by Doping of Oxide Capping Layer for Spin Torque Transfer (STT) Magnetic Random Access memory (MRAM) Applications
App 20220246841 - Jan; Guenole ; et al. | 2022-08-04 |
Magnetic Tunnel Junction with Low Defect Rate after High Temperature Anneal for Magnetic Device Applications
App 20220238798 - Liu; Huanlong ; et al. | 2022-07-28 |
Ferromagnetic resonance (FMR) electrical testing apparatus for spintronic devices
Grant 11,397,226 - Jan , et al. July 26, 2 | 2022-07-26 |
Magnetic Element with Perpendicular Magnetic Anisotropy (PMA) and Improved Coercivity Field (Hc)/Switching Current Ratio
App 20220149272 - Guisan; Santiago Serrano ; et al. | 2022-05-12 |
High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications
Grant 11,316,098 - Jan , et al. April 26, 2 | 2022-04-26 |
Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications
Grant 11,309,489 - Liu , et al. April 19, 2 | 2022-04-19 |
Minimal thickness, low switching voltage magnetic free layers using an oxidation control layer and magnetic moment tuning layer for spintronic applications
Grant 11,264,560 - Iwata , et al. March 1, 2 | 2022-03-01 |
Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio
Grant 11,264,566 - Guisan , et al. March 1, 2 | 2022-03-01 |
Multi-probe ferromagnetic resonance (FMR) apparatus for wafer level characterization of magnetic films
Grant 11,237,240 - Guisan , et al. February 1, 2 | 2022-02-01 |
Seed Layer for Multilayer Magnetic Materials
App 20210391533 - Jan; Guenole ; et al. | 2021-12-16 |
Reduction of Capping Layer Resistance Area Product for Magnetic Device Applications
App 20210367146 - Jan; Guenole ; et al. | 2021-11-25 |
Electrical Testing Apparatus for Spintronics Devices
App 20210325460 - Jan; Guenole ; et al. | 2021-10-21 |
Protective Passivation Layer for Magnetic Tunnel Junctions
App 20210293912 - Iwata; Jodi Mari ; et al. | 2021-09-23 |
Seed layer for multilayer magnetic materials
Grant 11,107,977 - Jan , et al. August 31, 2 | 2021-08-31 |
Monolayer-By-Monolayer Growth of MgO Layers Using Mg Sublimation and Oxidation
App 20210262078 - Patel; Sahil ; et al. | 2021-08-26 |
Scanning ferromagnetic resonance (FMR) for wafer-level characterization of magnetic films and multilayers
Grant 11,092,661 - Guisan , et al. August 17, 2 | 2021-08-17 |
Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure With Perpendicular Magnetic Anisotropy For STT-MRAM
App 20210210674 - Beach; Robert ; et al. | 2021-07-08 |
Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment Enhancement
App 20210210680 - Jan; Guenole ; et al. | 2021-07-08 |
Electrical testing apparatus for spintronics devices
Grant 11,054,471 - Jan , et al. July 6, 2 | 2021-07-06 |
Ion beam etching process design to minimize sidewall re-deposition
Grant 11,043,632 - Sundar , et al. June 22, 2 | 2021-06-22 |
Nitride Diffusion Barrier Structure for Spintronic Applications
App 20210175414 - Guisan; Santiago Serrano ; et al. | 2021-06-10 |
Reduction of capping layer resistance area product for magnetic device applications
Grant 11,031,547 - Jan , et al. June 8, 2 | 2021-06-08 |
Protective passivation layer for magnetic tunnel junctions
Grant 11,024,798 - Iwata , et al. June 1, 2 | 2021-06-01 |
Monolayer-by-monolayer growth of MgO layers using Mg sublimation and oxidation
Grant 11,001,919 - Patel , et al. May 11, 2 | 2021-05-11 |
Method and circuits for programming STT-MRAM cells for reducing back-hopping
Grant 10,978,124 - Liu , et al. April 13, 2 | 2021-04-13 |
Magnetic layer for magnetic random access memory (MRAM) by moment enhancement
Grant 10,957,851 - Jan , et al. March 23, 2 | 2021-03-23 |
Ion Beam Etching Process Design to Minimize Sidewall Re-Deposition
App 20210083180 - Sundar; Vignesh ; et al. | 2021-03-18 |
Nitride diffusion barrier structure for spintronic applications
Grant 10,950,782 - Guisan , et al. March 16, 2 | 2021-03-16 |
Method for Measuring Saturation Magnetization of Magnetic Films and Multilayer Stacks
App 20210025958 - Guisan; Santiago Serrano ; et al. | 2021-01-28 |
Dual Magnetic Tunnel Junction (DMTJ) Stack Design
App 20210020830 - Sundar; Vignesh ; et al. | 2021-01-21 |
Low Resistance MgO Capping Layer for Perpendicularly Magnetized Magnetic Tunnel Junctions
App 20210020831 - Patel; Sahil ; et al. | 2021-01-21 |
Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of STT-MRAM (Spin-Torque Transfer-Magnetic Random Access Memory) Devices
App 20210013260 - Liu; Huanlong ; et al. | 2021-01-14 |
Magnetic Element with Perpendicular Magnetic Anisotropy (PMA) and Improved Coercivity Field (Hc)/Switching Current Ratio
App 20200403149 - Guisan; Santiago Serrano ; et al. | 2020-12-24 |
Minimal Thickness, Low Switching Voltage Magnetic Free Layers Using an Oxidation Control Layer and Magnetic Moment Tuning Layer for Spintronic Applications
App 20200403143 - Iwata; Jodi Mari ; et al. | 2020-12-24 |
Magnetic Tunnel Junction with Low Defect Rate after High Temperature Anneal for Magnetic Device Applications
App 20200395534 - Liu; Huanlong ; et al. | 2020-12-17 |
Ferromagnetic Resonance (FMR) Electrical Testing Apparatus for Spintronic Devices
App 20200393525 - Jan; Guenole ; et al. | 2020-12-17 |
Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM
Grant 10,868,235 - Beach , et al. December 15, 2 | 2020-12-15 |
Initialization process for magnetic random access memory (MRAM) production
Grant 10,867,651 - Lee , et al. December 15, 2 | 2020-12-15 |
Multi-Probe Ferromagnetic Resonance (FMR) Apparatus for Wafer Level Characterization of Magnetic Films
App 20200386840 - Guisan; Santiago Serrano ; et al. | 2020-12-10 |
Method and Circuits for Programming STT-MRAM Cells for Reducing Back-Hopping
App 20200327918 - Liu; Huanlong ; et al. | 2020-10-15 |
Dual magnetic tunnel junction (DMTJ) stack design
Grant 10,797,225 - Sundar , et al. October 6, 2 | 2020-10-06 |
Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions
Grant 10,797,232 - Patel , et al. October 6, 2 | 2020-10-06 |
Method for measuring saturation magnetization of magnetic films and multilayer stacks
Grant 10,788,561 - Guisan , et al. September 29, 2 | 2020-09-29 |
Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin torque transfer-magnetic random access memory) devices
Grant 10,784,310 - Liu , et al. Sept | 2020-09-22 |
Maintaining Coercive Field after High Temperature Anneal for Magnetic Device Applications with Perpendicular Magnetic Anistropy
App 20200279995 - Liu; Huanlong ; et al. | 2020-09-03 |
Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresistive Random Access Memory (MRAM)
App 20200279993 - Iwata; Jodi Mari ; et al. | 2020-09-03 |
Ferromagnetic resonance (FMR) electrical testing apparatus for spintronic devices
Grant 10,761,154 - Jan , et al. Sep | 2020-09-01 |
Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications
Grant 10,763,428 - Liu , et al. Sep | 2020-09-01 |
Monolayer-By-Monolayer Growth of MgO Layers Using Mg Sublimation and Oxidation
App 20200270737 - Patel; Sahil ; et al. | 2020-08-27 |
Multi-probe ferromagnetic resonance (FMR) apparatus for wafer level characterization of magnetic films
Grant 10,754,000 - Guisan , et al. A | 2020-08-25 |
Nitride Diffusion Barrier Structure for Spintronic Applications
App 20200266334 - Guisan; Santiago Serrano ; et al. | 2020-08-20 |
Self-Aligned Magnetic Metal Shield to Enhance the Coercivity of STT-MRAM Devices
App 20200212298 - Yang; Yi ; et al. | 2020-07-02 |
Methods and circuits for programming STT-MRAM cells for reducing back-hopping
Grant 10,699,765 - Liu , et al. | 2020-06-30 |
Nitride capping layer for spin torque transfer (STT)-magnetoresistive random access memory (MRAM)
Grant 10,665,773 - Iwata , et al. | 2020-05-26 |
Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy
Grant 10,658,577 - Liu , et al. | 2020-05-19 |
Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of STT-MRAM (Spin Torque Transfer-Magnetic Random Access Memory)
App 20200152698 - Liu; Huanlong ; et al. | 2020-05-14 |
Monolayer-by-monolayer growth of MgO layers using Mg sublimation and oxidation
Grant 10,648,069 - Patel , et al. | 2020-05-12 |
Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment Enhancement
App 20200144494 - Jan; Guenole ; et al. | 2020-05-07 |
Dual Magnetic Tunnel Junction Devices for Magnetic Random Access Memory (MRAM)
App 20200144488 - Sundar; Vignesh ; et al. | 2020-05-07 |
High Thermal Stability by Doping of Oxide Capping Layer for Spin Torque Transfer (STT) Magnetic Random Access memory (MRAM) Appl
App 20200144486 - Jan; Guenole ; et al. | 2020-05-07 |
Fully Compensated Synthetic Ferromagnet for Spintronics Applications
App 20200144487 - Zhu; Jian ; et al. | 2020-05-07 |
Low Resistance MgO Capping Layer for Perpendicularly Magnetized Magnetic Tunnel Junctions
App 20200136025 - Patel; Sahil ; et al. | 2020-04-30 |
Method for Measuring Saturation magnetization of Magnetic Films and Multilayer Stacks
App 20200116811 - Guisan; Santiago Serrano ; et al. | 2020-04-16 |
Monolayer-By-Monolayer Growth of MgO Layers using Mg Sublimation and Oxidation
App 20200115788 - Patel; Sahil ; et al. | 2020-04-16 |
Electrical Testing Apparatus for Spintronics Devices
App 20200116790 - Jan; Guenole ; et al. | 2020-04-16 |
Seed Layer for Multilayer Magnetic Materials
App 20200091417 - Jan; Guenole ; et al. | 2020-03-19 |
Dual Magnetic Tunnel Junction (DMTJ) Stack Design
App 20200091408 - Sundar; Vignesh ; et al. | 2020-03-19 |
Perpendicularly Magnetized Ferromagnetic Layers Having an Oxide Interface Allowing for Improved Control of Oxidation
App 20200075213 - Thomas; Luc ; et al. | 2020-03-05 |
Multi-Probe Ferromagnetic Resonance (FMR) Apparatus for Wafer Level Characterization of Magnetic Films
App 20200049787 - Guisan; Santiago Serrano ; et al. | 2020-02-13 |
Protective Passivation Layer for Magnetic Tunnel Junctions
App 20200035912 - Iwata; Jodi Mari ; et al. | 2020-01-30 |
Maintaining Coercive Field after High Temperature Anneal for Magnetic Device Applications with Perpendicular Magnetic Anisotropy
App 20200028073 - Liu; Huanlong ; et al. | 2020-01-23 |
Magnetic layer for magnetic random access memory (MRAM) by moment enhancement
Grant 10,522,752 - Jan , et al. Dec | 2019-12-31 |
Fully compensated synthetic ferromagnet for spintronics applications
Grant 10,522,747 - Zhu , et al. Dec | 2019-12-31 |
Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)
Grant 10,522,746 - Sundar , et al. Dec | 2019-12-31 |
High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications
Grant 10,522,744 - Jan , et al. Dec | 2019-12-31 |
Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions
Grant 10,522,745 - Patel , et al. Dec | 2019-12-31 |
Electrical testing apparatus for spintronics devices
Grant 10,509,074 - Jan , et al. Dec | 2019-12-17 |
Seed layer for multilayer magnetic materials
Grant 10,490,733 - Jan , et al. Nov | 2019-11-26 |
Perpendicularly magnetized ferromagnetic layers having an oxide interface allowing for improved control of oxidation
Grant 10,475,564 - Thomas , et al. Nov | 2019-11-12 |
Scanning Ferromagnetic Resonance (FMR) for Wafer-Level Characterization of Magnetic Films and Multilayers
App 20190331752 - Guisan; Santiago Serrano ; et al. | 2019-10-31 |
Initialization Process for Magnetic Random Access Memory (MRAM) Production
App 20190311754 - Lee; Yuan-Jen ; et al. | 2019-10-10 |
Protective passivation layer for magnetic tunnel junctions
Grant 10,439,132 - Iwata , et al. O | 2019-10-08 |
Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy
Grant 10,431,736 - Liu , et al. O | 2019-10-01 |
Reduction of Capping Layer Resistance Area Product for Magnetic Device Applications
App 20190288189 - Jan; Guenole ; et al. | 2019-09-19 |
Scanning ferromagnetic resonance (FMR) for wafer-level characterization of magnetic films and multilayers
Grant 10,401,464 - Guisan , et al. Sep | 2019-09-03 |
Electrical Testing Apparatus for Spintronics Devices
App 20190257881 - Jan; Guenole ; et al. | 2019-08-22 |
Nitride Capping Layer for Spin Torque Transfer (STT)-Magnetoresistive Random Access Memory (MRAM)
App 20190237661 - Iwata; Jodi Mari ; et al. | 2019-08-01 |
Ferromagnetic Resonance (FMR) Electrical Testing Apparatus for Spintronic Devices
App 20190227132 - Jan; Guenole ; et al. | 2019-07-25 |
Low Resistance MgO Capping Layer for Perpendicularly Magnetized Magnetic Tunnel Junctions
App 20190189910 - Patel; Sahil ; et al. | 2019-06-20 |
Fully Compensated Synthetic Ferromagnet for Spintronics Applications
App 20190189911 - Zhu; Jian ; et al. | 2019-06-20 |
Initialization process for magnetic random access memory (MRAM) production
Grant 10,325,639 - Lee , et al. | 2019-06-18 |
Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure with Perpendicular Magnetic Anisotropy for STT-MRAM
App 20190173003 - Beach; Robert ; et al. | 2019-06-06 |
Reduction of capping layer resistance area product for magnetic device applications
Grant 10,312,433 - Jan , et al. | 2019-06-04 |
Initialization Process for Magnetic Random Access Memory (MRAM) Production
App 20190156876 - Lee; Yuan-Jen ; et al. | 2019-05-23 |
Multilayer Structure for Reducing Film Roughness in Magnetic Devices
App 20190140168 - Zhu; Jian ; et al. | 2019-05-09 |
High Thermal Stability by Doping of Oxide Capping Layer for Spin Torque Transfer (STT) Magnetic Random Access memory (MRAM) Applications
App 20190109277 - Jan; Guenole ; et al. | 2019-04-11 |
Multilayer Structure for Reducing Film Roughness in Magnetic Devices
App 20190088866 - Zhu; Jian ; et al. | 2019-03-21 |
Fully compensated synthetic ferromagnet for spintronics applications
Grant 10,230,044 - Zhu , et al. | 2019-03-12 |
MgO insertion into free layer for magnetic memory applications
Grant 10,193,062 - Iwata , et al. Ja | 2019-01-29 |
Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM
Grant 10,193,056 - Beach , et al. Ja | 2019-01-29 |
Methods and Circuits for Programming STT-MRAM Cells for Reducing Back-Hopping
App 20180358071 - Liu; Huanlong ; et al. | 2018-12-13 |
Maintaining Coercive Field after High Temperature Anneal for Magnetic Device Applications with Perpendicular Magnetic Anisotropy
App 20180323371 - Liu; Huanlong ; et al. | 2018-11-08 |
Multilayer structure for reducing film roughness in magnetic devices
Grant 10,115,892 - Zhu , et al. October 30, 2 | 2018-10-30 |
Adaptive reference scheme for magnetic memory applications
Grant 10,102,896 - Jan , et al. October 16, 2 | 2018-10-16 |
Scanning Ferromagnetic Resonance (FMR) for Wafer-Level Characterization of Magnetic Films and Multilayers
App 20180267128 - Guisan; Santiago Serrano ; et al. | 2018-09-20 |
Protective Passivation Layer for Magnetic Tunnel Junctions
App 20180269385 - Iwata; Jodi Mari ; et al. | 2018-09-20 |
MgO Insertion into Free Layer for Magnetic Memory Applications
App 20180269387 - Iwata; Jodi Mari ; et al. | 2018-09-20 |
Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy
Grant 10,014,465 - Liu , et al. July 3, 2 | 2018-07-03 |
Magnetic Tunnel Junction with Low Defect Rate after High Temperature Anneal for Magnetic Device Applications
App 20180175287 - Liu; Huanlong ; et al. | 2018-06-21 |
MgO insertion into free layer for magnetic memory applications
Grant 9,966,529 - Iwata , et al. May 8, 2 | 2018-05-08 |
Fully Compensated Synthetic Ferromagnet for Spintronics Applications
App 20180026179 - Zhu; Jian ; et al. | 2018-01-25 |
Perpendicularly Magnetized Ferromagnetic Layers Having an Oxide Interface Allowing for Improved Control of Oxidation
App 20180005746 - Thomas; Luc ; et al. | 2018-01-04 |
Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications
Grant 9,842,988 - Liu , et al. December 12, 2 | 2017-12-12 |
Adaptive Reference Scheme for Magnetic Memory Applications
App 20170352395 - Jan; Guenole ; et al. | 2017-12-07 |
Implementation of a one time programmable memory using a MRAM stack design
Grant 9,805,816 - Jan , et al. October 31, 2 | 2017-10-31 |
Multilayer structure for reducing film roughness in magnetic devices
Grant 9,780,299 - Zhu , et al. October 3, 2 | 2017-10-03 |
Multilayer Structure for Reducing Film Roughness in Magnetic Devices
App 20170256703 - Zhu; Jian ; et al. | 2017-09-07 |
Adaptive reference scheme for magnetic memory applications
Grant 9,747,965 - Jan , et al. August 29, 2 | 2017-08-29 |
Adaptive Reference Scheme for Magnetic Memory Applications
App 20170186472 - Jan; Guenole ; et al. | 2017-06-29 |
Seed layer for growth of <111> magnetic materials
Grant 9,673,385 - Liu , et al. June 6, 2 | 2017-06-06 |
Multilayer Structure for Reducing Film Roughness in Magnetic Devices
App 20170148977 - Zhu; Jian ; et al. | 2017-05-25 |
Seed Layer for Multilayer Magnetic Materials
App 20170117456 - Jan; Guenole ; et al. | 2017-04-27 |
Magnetic Tunnel Junction with Low Defect Rate after High Temperature Anneal for Magnetic Device Applications
App 20170025602 - Liu; Huanlong ; et al. | 2017-01-26 |
Seed layer for multilayer magnetic materials
Grant 9,490,054 - Jan , et al. November 8, 2 | 2016-11-08 |
Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
Grant 9,478,733 - Jan , et al. October 25, 2 | 2016-10-25 |
High thermal stability reference structure with out-of-plane anisotropy for magnetic device applications
Grant 9,472,752 - Wang , et al. October 18, 2 | 2016-10-18 |
Method of making a high thermal stability reference structure with out-of-plane anisotropy for magnetic device applications
Grant 9,466,789 - Wang , et al. October 11, 2 | 2016-10-11 |
Implementation of a One Time Programmable Memory Using a MRAM Stack Design
App 20160293268 - Jan; Guenole ; et al. | 2016-10-06 |
Free layer with out-of-plane anisotropy for magnetic device applications
Grant 9,437,268 - Wang , et al. September 6, 2 | 2016-09-06 |
Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealing
Grant 9,425,387 - Liu , et al. August 23, 2 | 2016-08-23 |
Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
Grant 9,391,265 - Jan , et al. July 12, 2 | 2016-07-12 |
Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
Grant 9,373,777 - Jan , et al. June 21, 2 | 2016-06-21 |
Co/X and CoX multilayers with improved out-of-plane anisotropy for magnetic device applications
Grant 9,373,780 - Jan , et al. June 21, 2 | 2016-06-21 |
Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
Grant 9,373,778 - Jan , et al. June 21, 2 | 2016-06-21 |
MRAM write pulses to dissipate intermediate state domains
Grant 9,343,132 - Lee , et al. May 17, 2 | 2016-05-17 |
Free Layer with Out-of-Plane Anisotropy for Magnetic Device Applications
App 20160042779 - Wang; Yu-Jen ; et al. | 2016-02-11 |
Free layer with out-of-plane anisotropy for magnetic device applications
Grant 9,252,710 - Wang , et al. February 2, 2 | 2016-02-02 |
Fully compensated synthetic antiferromagnet for spintronics applications
Grant 9,082,960 - Jan , et al. July 14, 2 | 2015-07-14 |
Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications
Grant 9,048,411 - Jan , et al. June 2, 2 | 2015-06-02 |
Magnetic element with improved out-of-plane anisotropy for spintronic applications
Grant 9,006,704 - Jan , et al. April 14, 2 | 2015-04-14 |
Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
Grant 8,987,847 - Jan , et al. March 24, 2 | 2015-03-24 |
Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
Grant 8,987,848 - Jan , et al. March 24, 2 | 2015-03-24 |
Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
Grant 8,987,849 - Jan , et al. March 24, 2 | 2015-03-24 |
STT-MRAM reference layer having substantially reduced stray field and consisting of a single magnetic domain
Grant 8,981,503 - Beach , et al. March 17, 2 | 2015-03-17 |
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
App 20150061055 - Jan; Guenole ; et al. | 2015-03-05 |
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
App 20150061058 - Jan; Guenole ; et al. | 2015-03-05 |
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
App 20150061057 - Jan; Guenole ; et al. | 2015-03-05 |
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
App 20150061056 - Jan; Guenole ; et al. | 2015-03-05 |
High Thermal Stability Reference Structure with Out-of-Plane Anisotropy for Magnetic Device Applications
App 20150056368 - Wang; Yu-Jen ; et al. | 2015-02-26 |
Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
Grant 8,962,348 - Jan , et al. February 24, 2 | 2015-02-24 |
High Thermal Stability Reference Structure with Out-of-Plane Anisotropy for Magnetic Device Applications
App 20150041935 - Wang; Yu-Jen ; et al. | 2015-02-12 |
High thermal stability free layer with high out-of-plane anisotropy for magnetic device applications
Grant 8,946,834 - Wang , et al. February 3, 2 | 2015-02-03 |
Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure with Perpendicular Magnetic Anisotropy for STT-MRAM
App 20150001656 - Beach; Robert ; et al. | 2015-01-01 |
Storage element for STT MRAM applications
Grant 8,921,961 - Kula , et al. December 30, 2 | 2014-12-30 |
Adaptive reference scheme for magnetic memory applications
Grant 8,917,536 - Jan , et al. December 23, 2 | 2014-12-23 |
MTJ element for STT MRAM
Grant 8,900,884 - Kula , et al. December 2, 2 | 2014-12-02 |
MRAM Write Pulses to Dissipate Intermediate State Domains
App 20140347918 - Lee; Yuan-Jen ; et al. | 2014-11-27 |
Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
Grant 8,878,323 - Jan , et al. November 4, 2 | 2014-11-04 |
High thermal stability reference structure with out-of-plane aniotropy to magnetic device applications
Grant 8,871,365 - Wang , et al. October 28, 2 | 2014-10-28 |
Fully Compensated Synthetic Antiferromagnet for Spintronics Applications
App 20140306302 - Jan; Guenole ; et al. | 2014-10-16 |
Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM
Grant 8,860,156 - Beach , et al. October 14, 2 | 2014-10-14 |
Free layer with high thermal stability for magnetic device applications by insertion of a boron dusting layer
Grant 8,852,760 - Wang , et al. October 7, 2 | 2014-10-07 |
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
App 20140217531 - Jan; Guenole ; et al. | 2014-08-07 |
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
App 20140217529 - Jan; Guenole ; et al. | 2014-08-07 |
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
App 20140217530 - Jan; Guenole ; et al. | 2014-08-07 |
Free Layer with Out-of-Plane Anisotropy for Magnetic Device Applications
App 20140145792 - Wang; Yu-Jen ; et al. | 2014-05-29 |
Adaptive Reference Scheme for Magnetic Memory Applications
App 20140119105 - Jan; Guenole ; et al. | 2014-05-01 |
Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applications
Grant 8,710,603 - Jan , et al. April 29, 2 | 2014-04-29 |
Seed Layer for Multilayer Magnetic Materials
App 20140103469 - Jan; Guenole ; et al. | 2014-04-17 |
Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
Grant 8,698,261 - Jan , et al. April 15, 2 | 2014-04-15 |
Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applications
Grant 8,698,260 - Jan , et al. April 15, 2 | 2014-04-15 |
Storage Element for STT MRAM Applications
App 20140077318 - Kula; Witold ; et al. | 2014-03-20 |
Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure with Perpendicular Magnetic Anisotropy for STT-MRAM
App 20140070341 - Beach; Robert ; et al. | 2014-03-13 |
Multilayers Having Reduced Perpendicular Demagnetizing Field Using Moment Dilution for Spintronic Applications
App 20140035074 - Jan; Guenole ; et al. | 2014-02-06 |
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
App 20140017820 - Jan; Guenole ; et al. | 2014-01-16 |
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
App 20140015079 - Jan; Guenole ; et al. | 2014-01-16 |
MTJ Element for STT MRAM
App 20130334629 - Kula; Witold ; et al. | 2013-12-19 |
Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications
Grant 8,592,927 - Jan , et al. November 26, 2 | 2013-11-26 |
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
App 20130309784 - Jan; Guenole ; et al. | 2013-11-21 |
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
App 20130307101 - Jan; Guenole ; et al. | 2013-11-21 |
Free Layer with High Thermal Stability for Magnetic Device Applications by Insertion of a Boron Dusting Layer
App 20130270523 - Wang; Yu-Jen ; et al. | 2013-10-17 |
Reduction of Capping Layer Resistance Area Product for Magnetic Device Applications
App 20130264665 - Jan; Guenole ; et al. | 2013-10-10 |
Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
Grant 8,541,855 - Jan , et al. September 24, 2 | 2013-09-24 |
STT-MRAM Reference Layer Having Substantially Reduced Stray Field and Consisting of a Single Magnetic Domain
App 20130240963 - Beach; Robert ; et al. | 2013-09-19 |
High Thermal Stability Free Layer with High Out-of-Plane Anisotropy for Magnetic Device Applications
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