loadpatents
Patent applications and USPTO patent grants for Jain; Kailash C..The latest application filed is for "metal composite material for attachment to ceramic".
Patent | Date |
---|---|
Low-temperature bonding of refractory ceramic layers Grant 9,276,267 - Jain , et al. March 1, 2 | 2016-03-01 |
Metal composite material for attachment to ceramic Grant 9,017,897 - Jain , et al. April 28, 2 | 2015-04-28 |
Material for solid state sintered material Grant 9,005,490 - Jain , et al. April 14, 2 | 2015-04-14 |
Material For Solid State Sintered Material App 20140166941 - JAIN; KAILASH C. ;   et al. | 2014-06-19 |
Metal Composite Material For Attachment To Ceramic App 20140170529 - JAIN; Kailash C. ;   et al. | 2014-06-19 |
Perovskite materials for solid oxide fuel cell cathodes Grant 8,124,037 - Jain , et al. February 28, 2 | 2012-02-28 |
Low-Resistance Ceramic Electrode for a Solid Oxide Fuel Cell App 20110143265 - Jain; Kailash C. ;   et al. | 2011-06-16 |
Perovskite Materials for Solid Oxide Fuel Cell Cathodes App 20110143255 - Jain; Kailash C. ;   et al. | 2011-06-16 |
Low-temperature bonding of refractory ceramic layers App 20100075194 - Jain; Kailash C. ;   et al. | 2010-03-25 |
High strength support for solid oxide fuel cell App 20090047569 - Jain; Kailash C. ;   et al. | 2009-02-19 |
Sensing element and method of making App 20060213772 - Jain; Kailash C. ;   et al. | 2006-09-28 |
Method of treating a gas sensor Grant 6,916,384 - Jain , et al. July 12, 2 | 2005-07-12 |
Co-fired oxygen sensor elements Grant 6,682,640 - Jain , et al. January 27, 2 | 2004-01-27 |
Co-fired Oxygen Sensor Elements App 20030230484 - Jain, Kailash C. ;   et al. | 2003-12-18 |
Gas sensor and method of manufacturing the same Grant 6,638,405 - Jain , et al. October 28, 2 | 2003-10-28 |
Gas sensor and method of treating the same App 20030075440 - Jain, Kailash C. ;   et al. | 2003-04-24 |
Sensor, electrode, and methods of making and using the same App 20030070921 - Clyde, Eric P. ;   et al. | 2003-04-17 |
Gas sensor and method of manufacturing the same App 20030047452 - Jain, Kailash C. ;   et al. | 2003-03-13 |
Method for fabricating three-dimensional microstructures and a high-sensitivity integrated vibration sensor using such microstructures Grant 4,948,757 - Jain , et al. August 14, 1 | 1990-08-14 |
Method for fabricating three-dimensional microstructures and a high-sensitivity integrated vibration sensor using such microstructures Grant 4,918,032 - Jain , et al. April 17, 1 | 1990-04-17 |
JMOS transistor utilizing polysilicon sinks Grant 4,811,063 - Valeri , et al. * March 7, 1 | 1989-03-07 |
Process for forming in a silicon oxide layer a portion with vertical side walls Grant 4,800,170 - Jain , et al. January 24, 1 | 1989-01-24 |
High voltage depletion mode MOS power field effect transistor Grant 4,786,952 - MacIver , et al. November 22, 1 | 1988-11-22 |
Vertical depletion-mode j-MOSFET Grant 4,746,960 - Valeri , et al. May 24, 1 | 1988-05-24 |
Method for patterning silicon dioxide with high resolution in three dimensions Grant 4,652,334 - Jain , et al. March 24, 1 | 1987-03-24 |
uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.
While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.
All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.