Jain; Amitabh

Patent Applications and Registrations

Patent applications and USPTO patent grants for Jain; Amitabh.The latest application filed is for "automated training and selection of models for document analysis".

Company Profile

6.77.82

Jain; Amitabh - Pune IN
Jain; Amitabh - Allen TX
Jain; Amitabh - Malta NY
Jain; Amitabh - Richardson TX

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Representing documents using document keys Grant 11,361,034 - Kulkarni , et al. June 14, 2	2022-06-14
Automated Training And Selection Of Models For Document Analysis App 20220019943 - Chaudhari; Dhruv ; et al.	2022-01-20
Risk prediction based on automated analysis of documents Grant 11,151,501 - Engineer , et al. October 19, 2	2021-10-19
Automated training and selection of models for document analysis Grant 10,936,974 - Chaudhari , et al. March 2, 2	2021-03-02
Risk Prediction Based On Automated Analysis Of Documents App 20200356922 - Engineer; Sunu ; et al.	2020-11-12
Risk Prediction Based On Automated Analysis Of Documents App 20200265355 - Engineer; Sunu ; et al.	2020-08-20
Risk prediction based on automated analysis of documents Grant 10,726,374 - Engineer , et al.	2020-07-28
Automated Training And Selection Of Models For Document Analysis App 20200202256 - Chaudhari; Dhruv ; et al.	2020-06-25
Integrated circuit having chemically modified spacer surface Grant 10,483,261 - Kirkpatrick , et al. Nov	2019-11-19
Clause discovery for validation of documents Grant 10,409,805 - Jain , et al. Sept	2019-09-10
Clause discovery for validation of documents Grant 10,162,850 - Jain , et al. Dec	2018-12-25
Threshold mismatch and IDDQ reduction using split carbon co-implantation Grant 10,068,802 - Eshun , et al. September 4, 2	2018-09-04
Methods, apparatus and system for self-aligned retrograde well doping for finFET devices Grant 9,960,086 - Park , et al. May 1, 2	2018-05-01
Methods, Apparatus And System For Self-aligned Retrograde Well Doping For Finfet Devices App 20180090391 - Park; Mira ; et al.	2018-03-29
Integrated Circuit Having Chemically Modified Spacer Surface App 20170179126 - KIRKPATRICK; BRIAN K. ; et al.	2017-06-22
Integrated circuit having chemically modified spacer surface Grant 9,620,423 - Kirkpatrick , et al. April 11, 2	2017-04-11
Integrated circuit having chemically modified spacer surface Grant 9,496,359 - Kirkpatrick , et al. November 15, 2	2016-11-15
Integrated Circuit Having Chemically Modified Spacer Surface App 20160233132 - KIRKPATRICK; BRIAN K. ; et al.	2016-08-11
Integrated Circuit Having Chemically Modified Spacer Surface App 20160027884 - KIRKPATRICK; BRIAN K. ; et al.	2016-01-28
Recessed channel insulated-gate field effect transistor with self-aligned gate and increased channel length Grant 9,245,975 - Lim , et al. January 26, 2	2016-01-26
Indium, carbon and halogen doping for PMOS transistors Grant 9,024,384 - Nandakumar , et al. May 5, 2	2015-05-05
Drain induced barrier lowering with anti-punch-through implant Grant 8,987,748 - Pal , et al. March 24, 2	2015-03-24
Recessed Channel Insulated-gate Field Effect Transistor With Self-aligned Gate And Increased Channel Length App 20150037952 - Lim; Kwan-Yong ; et al.	2015-02-05
ZTCR poly resistor in replacement gate flow Grant 8,927,385 - Nandakumar , et al. January 6, 2	2015-01-06
Strain-engineered MOSFETs having rimmed source-drain recesses Grant 8,877,581 - Jain , et al. November 4, 2	2014-11-04
Recessed channel insulated-gate field effect transistor with self-aligned gate and increased channel length Grant 8,865,549 - Lim , et al. October 21, 2	2014-10-21
Carbon and nitrogen doping for selected PMOS transistors on an integrated circuit Grant 8,853,042 - Nandakumar , et al. October 7, 2	2014-10-07
Offset screen for shallow source/drain extension implants, and processes and integrated circuits Grant 8,772,118 - Jain July 8, 2	2014-07-08
Ztcr Poly Resistor In Replacement Gate Flow App 20140167182 - Nandakumar; Mahalingam ; et al.	2014-06-19
Recessed Channel Insulated-Gate Field Effect Transistor with Self-Aligned Gate and Increased Channel Length App 20140159142 - Lim; Kwan-Yong ; et al.	2014-06-12
Carbon And Nitrogen Doping For Selected Pmos Transistors On An Integrated Circuit App 20140120675 - NANDAKUMAR; Mahalingam ; et al.	2014-05-01
Method of forming a CMOS device with a stressed-channel NMOS transistor and a strained-channel PMOS transistor Grant 8,691,644 - Song , et al. April 8, 2	2014-04-08
Carbon and nitrogen doping for selected PMOS transistor on an integrated circuit Grant 8,659,112 - Nandakumar , et al. February 25, 2	2014-02-25
Indium, Carbon And Halogen Doping For Pmos Transistors App 20140017869 - NANDAKUMAR; Mahalingam ; et al.	2014-01-16
Method of Forming a CMOS Device with a Stressed-Channel NMOS Transistor and a Strained-Channel PMOS Transistor App 20140011340 - Song; Seung-Chul ; et al.	2014-01-09
Formation of shallow junctions by diffusion from a dielectronic doped by cluster or molecular ion beams Grant 8,580,663 - Jain November 12, 2	2013-11-12
Indium, carbon and halogen doping for PMOS transistors Grant 8,558,310 - Nandakumar , et al. October 15, 2	2013-10-15
Integrated Circuit Having Chemically Modified Spacer Surface App 20130248949 - KIRKPATRICK; BRIAN K. ; et al.	2013-09-26
Drain Induced Barrier Lowering With Anti-punch-through Implant App 20130161639 - PAL; Himadri Sekhar ; et al.	2013-06-27
Threshold Mismatch And Iddq Reduction Using Split Carbon Co-implantation App 20130095630 - Eshun; Ebenezer ; et al.	2013-04-18
Method and system for improved nickel silicide Grant 8,372,750 - Jain , et al. February 12, 2	2013-02-12
Offset Screen For Shallow Source/drain Extension Implants, And Processes And Integrated Circuits App 20130009251 - Jain; Amitabh	2013-01-10
Method for forming strained channel PMOS devices and integrated circuits therefrom Grant 8,253,205 - Jain August 28, 2	2012-08-28
Curvature reduction for semiconductor wafers Grant 8,252,609 - Kirkpatrick , et al. August 28, 2	2012-08-28
Wafer planarity control between pattern levels Grant 8,216,945 - Prins , et al. July 10, 2	2012-07-10
CMOS fabrication process Grant 8,125,035 - Nandakumar , et al. February 28, 2	2012-02-28
Method of manufacturing a semiconductor device having reduced N/P or P/N junction crystal disorder Grant 8,124,511 - Jain February 28, 2	2012-02-28
Formation Of Shallow Junctions By Diffusion From A Dielectric Doped By Cluster Or Molecular Ion Beams App 20110312168 - Jain; Amitabh	2011-12-22
Formation of shallow junctions by diffusion from a dielectric doped by cluster or molecular ion beams Grant 8,026,135 - Jain September 27, 2	2011-09-27
Carbon And Nitrogen Doping For Selected Pmos Transistors On An Integrated Circuit App 20110147850 - Nandakumar; Mahalingam ; et al.	2011-06-23
Indium, Carbon And Halogen Doping For Pmos Transistors App 20110147854 - Nandakumar; Mahalingam ; et al.	2011-06-23
Method For Forming Strained Channel Pmos Devices And Integrated Circuits Therefrom App 20110133287 - Jain; Amitabh	2011-06-09
Methodology of improving the manufacturability of laser anneal Grant 7,932,139 - Bu , et al. April 26, 2	2011-04-26
Method for forming strained channel PMOS devices and integrated circuits therefrom Grant 7,902,032 - Jain March 8, 2	2011-03-08
Strain-engineered Mosfets Having Rimmed Source-drain Recesses App 20110042753 - Jain; Amitabh ; et al.	2011-02-24
Method for preparing a source material for ion implantation Grant 7,883,573 - Jain February 8, 2	2011-02-08
Method And System For Improved Nickel Silicide App 20110014768 - JAIN; Amitabh ; et al.	2011-01-20
Method and system for improved nickel silicide Grant 7,825,025 - Jain , et al. November 2, 2	2010-11-02
Curvature Reduction For Semiconductor Wafers App 20100261298 - Kirkpatrick; Brian K. ; et al.	2010-10-14
Wafer Planarity Control Between Pattern Levels App 20100261353 - Prins; Steven L. ; et al.	2010-10-14
Antimony ion implantation for semiconductor components Grant 7,795,122 - Bu , et al. September 14, 2	2010-09-14
CMOS Fabrication Process App 20100133624 - Nandakumar; Mahalingam ; et al.	2010-06-03
Semiconductor device having a dislocation loop located within a boundary created by source/drain regions and a method of manufacture therefor Grant 7,691,714 - Rotondaro , et al. April 6, 2	2010-04-06
CMOS fabrication process Grant 7,678,637 - Nandakumar , et al. March 16, 2	2010-03-16
Semiconductor device made by using a laser anneal to incorporate stress into a channel region Grant 7,670,917 - Jain , et al. March 2, 2	2010-03-02
Method of forming amorphous source/drain extensions Grant 7,666,748 - Jain February 23, 2	2010-02-23
Activation of CMOS source/drain extensions by ultra-high temperature anneals Grant 7,615,458 - Jain , et al. November 10, 2	2009-11-10
Method For Forming Strained Channel Pmos Devices And Integrated Circuits Therefrom App 20090184375 - Jain; Amitabh	2009-07-23
Implantation of carbon and/or fluorine in NMOS fabrication Grant 7,557,022 - Nandakumar , et al. July 7, 2	2009-07-07
Highly doped gate electrode made by rapidly melting and resolidifying the gate electrode Grant 7,557,021 - Jain July 7, 2	2009-07-07
Systems And Methods For Flash Annealing Of Semiconductor Devices App 20090130864 - MEHTA; Narendra Singh ; et al.	2009-05-21
Nickel alloy silicide including indium and a method of manufacture therefor Grant 7,511,350 - Chen , et al. March 31, 2	2009-03-31
CMOS Fabrication Process App 20090079008 - Nandakumar; Mahalingam ; et al.	2009-03-26
Semiconductor Device Made by Using a Laser Anneal to Incorporate Stress into a Channel Region App 20090065880 - Jain; Amitabh ; et al.	2009-03-12
Method for preparing a source material including forming a paste for ion implantation Grant 7,494,905 - Jain February 24, 2	2009-02-24
Formation Of Shallow Junctions By Diffusion From A Dielectric Doped By Cluster Or Molecular Ion Beams App 20090047768 - Jain; Amitabh	2009-02-19
Source/drain extension implant process for use with short time anneals Grant 7,479,668 - Jain , et al. January 20, 2	2009-01-20
Activation of CMOS Source/Drain Extensions by Ultra-High Temperature Anneals App 20080318387 - Jain; Amitabh ; et al.	2008-12-25
P-doped Region With Improved Abruptness App 20080308904 - Chidambaram; P. R. ; et al.	2008-12-18
Methodology Of Improving The Manufacturability Of Laser Anneal App 20080272097 - Bu; Haowen ; et al.	2008-11-06
N-type Semiconductor Component With Improved Dopant Implantation Profile And Method Of Forming Same App 20080268628 - Kohli; Puneet ; et al.	2008-10-30
Method of Manufacturing a Semiconductor Device Having Reduced N/P or P/N Junction Crystal Disorder App 20080145992 - Jain; Amitabh	2008-06-19
Nickel Alloy Silicide Including Indium and a Method of Manufacture Therefor App 20080128837 - Chen; Peijun J. ; et al.	2008-06-05
Method for manufacturing a transistor device having an improved breakdown voltage and a method for manufacturing an integrated circuit using the same Grant 7,371,648 - Chen , et al. May 13, 2	2008-05-13
Nickel silicide including indium and a method of manufacture therefor Grant 7,355,255 - Chen , et al. April 8, 2	2008-04-08
Method for manufacturing an integrated circuit using a capping layer having a degree of reflectivity Grant 7,344,929 - Mehrotra , et al. March 18, 2	2008-03-18
Complementary junction-narrowing implants for ultra-shallow junctions Grant 7,345,355 - Jain , et al. March 18, 2	2008-03-18
Nickel alloy silicide including indium and a method of manufacture therefor Grant 7,344,985 - Chen , et al. March 18, 2	2008-03-18
Method For Manufacturing A Transistor Device Having An Improved Breakdown Voltage And A Method For Manufacturing An Integrated Circuit Using The Same App 20080057654 - Chen; Jihong ; et al.	2008-03-06
Reduction Of Slip And Plastic Deformations During Annealing By The Use Of Ultra-fast Thermal Spikes App 20070293012 - Jain; Amitabh	2007-12-20
Implantation of carbon and/or fluorine in NMOS fabrication App 20070287274 - Nandakumar; Mahalingam ; et al.	2007-12-13
Reduced hydrogen sidewall spacer oxide Grant 7,306,995 - Bu , et al. December 11, 2	2007-12-11
Source/drain extension implant process for use with short time anneals Grant 7,297,605 - Jain , et al. November 20, 2	2007-11-20
Antimony ion implantation for semiconductor components App 20070218662 - Bu; Haowen ; et al.	2007-09-20
Method for Preparing a Source Material for Ion Implantation App 20070178651 - Jain; Amitabh	2007-08-02
Source/drain extensions having highly activated and extremely abrupt junctions Grant 7,247,535 - Jain July 24, 2	2007-07-24
Nickel silicide including indium and a method of manufacture therefor App 20070141840 - Chen; Peijun J. ; et al.	2007-06-21
Source/Drain Extensions Having Highly Activated and Extremely Abrupt Junctions App 20070099388 - Jain; Amitabh	2007-05-03
Nickel silicide including indium and a method of manufacture therefor Grant 7,211,516 - Chen , et al. May 1, 2	2007-05-01
Nickel Alloy Silicide Including Indium And A Method Of Manufacture Therefor App 20070049022 - Chen; Peijun J. ; et al.	2007-03-01
Reduced hydrogen sidewall spacer oxide Grant 7,173,296 - Bu , et al. February 6, 2	2007-02-06
Highly doped gate electrode made by rapidly melting and resolidifying the gate electrode App 20070020900 - Jain; Amitabh	2007-01-25
Ultra-shallow arsenic junction formation in silicon germanium Grant 7,163,878 - Kohli , et al. January 16, 2	2007-01-16
Solid phase epitaxy recrystallization by laser annealing Grant 7,118,980 - Jain October 10, 2	2006-10-10
Nickel silicide including indium and a method of manufacture therefor App 20060223295 - Chen; Peijun J. ; et al.	2006-10-05
Source/Drain Extensions Having Highly Activated and Extremely Abrupt Junctions App 20060199346 - Jain; Amitabh	2006-09-07
Semiconductor device having a dislocation loop located within a boundary created by source/drain regions and a method of manufacture therefor App 20060163651 - Rotondaro; Antonio Luis Pacheco ; et al.	2006-07-27
Method for manufacturing an integrated circuit using a capping layer having a degree of reflectivity App 20060154475 - Mehrotra; Manoj ; et al.	2006-07-13
CMOS transistors and methods of forming same App 20060154411 - Bu; Haowen ; et al.	2006-07-13
Ultra-shallow arsenic junction formation in silicon germanium App 20060105518 - Kohli; Puneet ; et al.	2006-05-18
Solid phase epitaxy recrystallization by laser annealing App 20060088969 - Jain; Amitabh	2006-04-27
Use of indium to define work function of p-type doped polysilicon Grant 7,026,218 - Rotondaro , et al. April 11, 2	2006-04-11
Method and system for improved nickel silicide App 20060073656 - Jain; Amitabh ; et al.	2006-04-06
Source/drain extensions having highly activated and extremely abrupt junctions App 20060073665 - Jain; Amitabh	2006-04-06
N-type transistor with antimony-doped ultra shallow source and drain App 20060017079 - Chakravarthi; Srinivasan ; et al.	2006-01-26
Source drain and extension dopant concentration App 20050189660 - Bu, Haowen ; et al.	2005-09-01
Reduced hydrogen sidewall spacer oxide App 20050133835 - Bu, Haowen ; et al.	2005-06-23
Reduced hydrogen sidewall spacer oxide App 20050133876 - Bu, Haowen ; et al.	2005-06-23
Ultra shallow junction formation App 20050112830 - Jain, Amitabh ; et al.	2005-05-26
CMOS transistors and methods of forming same App 20050059260 - Bu, Haowen ; et al.	2005-03-17
Complementary junction-narrowing implants for ultra-shallow junctions App 20050042848 - Jain, Amitabh ; et al.	2005-02-24
Method for preparing a source material for ion implantation App 20050040496 - Jain, Amitabh	2005-02-24
Gate edge diode leakage reduction Grant 6,847,089 - Chakravarthi , et al. January 25, 2	2005-01-25
Use of indium to define work function of p-type doped polysilicon App 20040222443 - Rotondaro, Antonio Luis Pacheco ; et al.	2004-11-11
Source drain and extension dopant concentration Grant 6,812,073 - Bu , et al. November 2, 2	2004-11-02
Complementary junction-narrowing implants for ultra-shallow junctions Grant 6,808,997 - Jain , et al. October 26, 2	2004-10-26
Use of indium to define work function of p-type doped polysilicon Grant 6,803,611 - Rotondaro , et al. October 12, 2	2004-10-12
Gate edge diode leakage reduction App 20040195631 - Chakravarthi, Srinivasan ; et al.	2004-10-07
Gate edge diode leakage reduction App 20040195633 - Chakravarthi, Srinivasan ; et al.	2004-10-07
Methods and apparatus for improved mosfet drain extension activation Grant 6,797,593 - Chakravarthi , et al. September 28, 2	2004-09-28
Complementary Junction-narrowing Implants For Ultra-shallow Junctions App 20040185633 - Jain, Amitabh ; et al.	2004-09-23
Use of indium to define work function of p-type doped polysilicon of polysilicon germanium App 20040129988 - Rotondaro, Antonio Luis Pacheco ; et al.	2004-07-08
Ultra shallow junction formation App 20040115889 - Jain, Amitabh ; et al.	2004-06-17
Source Drain And Extension Dopant Concentration App 20040110352 - Bu, Haowen ; et al.	2004-06-10
Transistor with improved source/drain extension dopant concentration Grant 6,743,705 - Mehrotra , et al. June 1, 2	2004-06-01
Method of CMOS source/drain extension with the PMOS implant spaced by poly oxide and cap oxide from the gates Grant 6,737,354 - Miles , et al. May 18, 2	2004-05-18
System for reducing segregation and diffusion of halo implants into highly doped regions Grant 6,713,360 - Jain , et al. March 30, 2	2004-03-30
Source/drain extension fabrication process with direct implantation Grant 6,709,938 - Miles , et al. March 23, 2	2004-03-23
Methods and apparatus for improved mosfet drain extension activation App 20040053481 - Chakravarthi, Srinivasan ; et al.	2004-03-18
Method of fabricating thermal CVD oxynitride and BTBAS nitride sidewall spacer for metal oxide semiconductor transistors Grant 6,677,201 - Bu , et al. January 13, 2	2004-01-13
Semiconductor device and method App 20030143813 - Khamankar, Rajesh B. ; et al.	2003-07-31
Process for reducing dopant loss for semiconductor devices App 20030129804 - Mehrotra, Manoj ; et al.	2003-07-10
System for reducing segregation and diffusion of halo implants into highly doped regions App 20030124823 - Jain, Amitabh ; et al.	2003-07-03
Transistor with improved source/drain extension dopant concentration App 20030109105 - Mehrotra, Manoj ; et al.	2003-06-12
Source/drain extension fabrication process with direct implantation App 20030040169 - Miles, Donald S. ; et al.	2003-02-27
Source/drain extension fabrication process App 20030017674 - Miles, Donald S. ; et al.	2003-01-23
Utilizing amorphorization of polycrystalline structures to achieve T-shaped MOSFET gate Grant 6,482,688 - Hu , et al. November 19, 2	2002-11-19
Utilizing amorphorization of polycrystalline structures to achieve t-shaped mosfet gate App 20020142530 - Hu, Chimin ; et al.	2002-10-03