| Patent | Date |
|---|
Multi-metal dipole doping to offer multi-threshold voltage pairs without channel doping for highly scaling CMOS device
Grant 11,393,725 - Bao , et al. July 19, 2 | 2022-07-19 |
Self-aligned Uniform Bottom Spacers For Vtfets
App 20220149179 - Xie; Ruilong ; et al. | 2022-05-12 |
Contact source/drain resistance
Grant 11,322,588 - Lie , et al. May 3, 2 | 2022-05-03 |
Replacement metal gate process for vertical transport field-effect transistor with self-aligned shared contacts
Grant 11,271,106 - Bao , et al. March 8, 2 | 2022-03-08 |
Vertical Field Effect Transistor With Bottom Spacer
App 20220059696 - Waskiewicz; Christopher J. ; et al. | 2022-02-24 |
Replacement metal gate process for vertical transport field-effect transistors with multiple threshold voltages
Grant 11,257,721 - Bao , et al. February 22, 2 | 2022-02-22 |
Approach to control over-etching of bottom spacers in vertical fin field effect transistor devices
Grant 11,251,285 - Bao , et al. February 15, 2 | 2022-02-15 |
Self-aligned uniform bottom spacers for VTFETS
Grant 11,251,287 - Xie , et al. February 15, 2 | 2022-02-15 |
Local Isolation Of Source/drain For Reducing Parasitic Capacitance In Vertical Field Effect Transistors
App 20220037210 - Xie; Ruilong ; et al. | 2022-02-03 |
Vertical transport field effect transistor structure with self-aligned top junction through early top source/drain epitaxy
Grant 11,239,360 - Mochizuki , et al. February 1, 2 | 2022-02-01 |
Replacement bottom spacer for vertical transport field effect transistors
Grant 11,239,119 - Xie , et al. February 1, 2 | 2022-02-01 |
Device with pure silicon oxide layer on silicon-germanium layer
Grant 11,217,450 - Ando , et al. January 4, 2 | 2022-01-04 |
Vertical field effect transistor with bottom spacer
Grant 11,217,692 - Waskiewicz , et al. January 4, 2 | 2022-01-04 |
Fabrication of field effect transistors with different threshold voltages through modified channel interfaces
Grant 11,211,379 - Ando , et al. December 28, 2 | 2021-12-28 |
Liner and cap structures for reducing local interconnect vertical resistance without compromising reliability
Grant 11,205,587 - Fan , et al. December 21, 2 | 2021-12-21 |
Multi-metal dipole doping to offer multi-threshold voltage pairs without channel doping for highly scaling CMOS device
Grant 11,195,762 - Bao , et al. December 7, 2 | 2021-12-07 |
Fabrication of field effect transistors with different threshold voltages through modified channel interfaces
Grant 11,177,257 - Ando , et al. November 16, 2 | 2021-11-16 |
Local isolation of source/drain for reducing parasitic capacitance in vertical field effect transistors
Grant 11,152,265 - Xie , et al. October 19, 2 | 2021-10-19 |
Self-aligned Uniform Bottom Spacers For Vtfets
App 20210320186 - Xie; Ruilong ; et al. | 2021-10-14 |
Gate-last process for vertical transport field-effect transistor
Grant 11,145,555 - Mochizuki , et al. October 12, 2 | 2021-10-12 |
Cmos Top Source/drain Region Doping And Epitaxial Growth For A Vertical Field Effect Transistor
App 20210305104 - Wu; Heng ; et al. | 2021-09-30 |
Surface area enhancement for stacked metal-insulator-metal (MIM) capacitor
Grant 11,121,209 - Ando , et al. September 14, 2 | 2021-09-14 |
Oxide isolated fin-type field-effect transistors
Grant 11,094,801 - Bao , et al. August 17, 2 | 2021-08-17 |
Low resistance source-drain contacts using high temperature silicides
Grant 11,088,033 - Adusumilli , et al. August 10, 2 | 2021-08-10 |
Vertical Field Effect Transistor With Bottom Spacer
App 20210217889 - Waskiewicz; Christopher J. ; et al. | 2021-07-15 |
Low resistance source-drain contacts using high temperature silicides
Grant 11,062,956 - Adusumilli , et al. July 13, 2 | 2021-07-13 |
Vertical Field-effect Transistor Late Gate Recess Process With Improved Inter-layer Dielectric Protection
App 20210151583 - XU; Wenyu ; et al. | 2021-05-20 |
Contact Source/drain Resistance
App 20210111246 - Lie; Fee Li ; et al. | 2021-04-15 |
Efficient metal-insulator-metal capacitor
Grant 10,978,550 - Chung , et al. April 13, 2 | 2021-04-13 |
Surface area enhancement for stacked metal-insulator-metal (MIM) capacitor
Grant 10,978,551 - Ando , et al. April 13, 2 | 2021-04-13 |
Interface charge reduction for SiGe surface
Grant 10,971,626 - Sadana , et al. April 6, 2 | 2021-04-06 |
Replacement Bottom Spacer For Vertical Transport Field Effect Transistors
App 20210098597 - Xie; Ruilong ; et al. | 2021-04-01 |
Vertical field-effect transistor late gate recess process with improved inter-layer dielectric protection
Grant 10,937,890 - Xu , et al. March 2, 2 | 2021-03-02 |
Maskless epitaxial growth of phosphorus-doped Si and boron-doped SiGe (Ge) for advanced source/drain contact
Grant 10,930,567 - Lee , et al. February 23, 2 | 2021-02-23 |
Complementary metal oxide semiconductor replacement gate high-k metal gate devices with work function adjustments
Grant 10,930,566 - Edge , et al. February 23, 2 | 2021-02-23 |
Formation of pure silicon oxide interfacial layer on silicon-germanium channel field effect transistor device
Grant 10,916,432 - Ando , et al. February 9, 2 | 2021-02-09 |
Local Isolation Of Source/drain For Reducing Parasitic Capacitance In Vertical Field Effect Transistors
App 20210035867 - Xie; Ruilong ; et al. | 2021-02-04 |
Wrap-around-contact structure for top source/drain in vertical FETS
Grant 10,892,336 - Lee , et al. January 12, 2 | 2021-01-12 |
Gate first technique in vertical transport FET using doped silicon gates with silicide
Grant 10,892,339 - Bao , et al. January 12, 2 | 2021-01-12 |
Low-resistance Top Contact On Vtfet
App 20210005735 - Waskiewicz; Christopher J. ; et al. | 2021-01-07 |
Multilayer dielectric for metal-insulator-metal capacitor (MIMCAP) capacitance and leakage improvement
Grant 10,886,362 - Ando , et al. January 5, 2 | 2021-01-05 |
Single-fin CMOS transistors with embedded and cladded source/drain structures
Grant 10,832,969 - Miao , et al. November 10, 2 | 2020-11-10 |
Fast recrystallization of hafnium or zirconium based oxides in insulator-metal structures
Grant 10,833,150 - Frank , et al. November 10, 2 | 2020-11-10 |
Gate stack reliability in vertical transport field effect transistors
Grant 10,833,172 - Lee , et al. November 10, 2 | 2020-11-10 |
Reduced static random access memory (SRAM) device foot print through controlled bottom source/drain placement
Grant 10,832,975 - Bao , et al. November 10, 2 | 2020-11-10 |
Leakage current reduction in stacked metal-insulator-metal capacitors
Grant 10,833,148 - Ando , et al. November 10, 2 | 2020-11-10 |
Low-resistance top contact on VTFET
Grant 10,833,173 - Waskiewicz , et al. November 10, 2 | 2020-11-10 |
Vertical transport field-effect transistor including dual layer top spacer
Grant 10,825,916 - Jagannathan , et al. November 3, 2 | 2020-11-03 |
Low resistance source-drain contacts using high temperature silicides
Grant 10,825,740 - Adusumilli , et al. November 3, 2 | 2020-11-03 |
Vertical Field-effect Transistor Late Gate Recess Process With Improved Inter-layer Dielectric Protection
App 20200321448 - XU; Wenyu ; et al. | 2020-10-08 |
Dual channel silicon/silicon germanium complementary metal oxide semiconductor performance with interface engineering
Grant 10,790,199 - Bao , et al. September 29, 2 | 2020-09-29 |
Gate First Technique In Vertical Transport Fet Using Doped Silicon Gates With Silicide
App 20200295147 - BAO; RUQIANG ; et al. | 2020-09-17 |
Self-aligned bottom source/drain epitaxial growth in vertical field effect transistors
Grant 10,777,659 - Lee , et al. Sept | 2020-09-15 |
Efficient Metal-insulator-metal Capacitor
App 20200273947 - Chung; Kisup ; et al. | 2020-08-27 |
Formation of self-aligned bottom spacer for vertical transistors
Grant 10,749,012 - Bao , et al. A | 2020-08-18 |
Encapsulation layer for vertical transport field-effect transistor gate stack
Grant 10,741,663 - Bao , et al. A | 2020-08-11 |
Wrap-around-contact structure for top source/drain in vertical FETs
Grant 10,741,652 - Lee , et al. A | 2020-08-11 |
Stacked MIM capacitors with self-aligned contact to reduce via enclosure
Grant 10,734,475 - Ando , et al. | 2020-08-04 |
Oxide Isolated Fin-type Field-effect Transistors
App 20200243670 - Bao; Ruqiang ; et al. | 2020-07-30 |
Gate-last process for vertical transport field-effect transistor
Grant 10,714,399 - Mochizuki , et al. | 2020-07-14 |
Gate-last Process For Vertical Transport Field-effect Transistor
App 20200219777 - Mochizuki; Shogo ; et al. | 2020-07-09 |
Replacement Metal Gate Process For Vertical Transport Field-effect Transistor With Self-aligned Shared Contacts
App 20200212220 - Bao; Ruqiang ; et al. | 2020-07-02 |
Replacement Metal Gate Process For Vertical Transport Field-effect Transistors With Multiple Threshold Voltages
App 20200211908 - Bao; Ruqiang ; et al. | 2020-07-02 |
Low resistance source-drain contacts using high temperature silicides
Grant 10,685,888 - Adusumilli , et al. | 2020-06-16 |
Liner and cap structures for reducing local interconnect vertical resistance without compromising reliability
Grant 10,685,876 - Fan , et al. | 2020-06-16 |
Fabrication Of Field Effect Transistors With Different Threshold Voltages Through Modified Channel Interfaces
App 20200185380 - Ando; Takashi ; et al. | 2020-06-11 |
Fabrication Of Field Effect Transistors With Different Threshold Voltages Through Modified Channel Interfaces
App 20200185381 - Ando; Takashi ; et al. | 2020-06-11 |
Oxide isolated fin-type field-effect transistors
Grant 10,680,083 - Bao , et al. | 2020-06-09 |
Replacement metal gate process for vertical transport field-effect transistors with multiple threshold voltages
Grant 10,672,670 - Bao , et al. | 2020-06-02 |
Replacement metal gate process for vertical transport field-effect transistor with self-aligned shared contacts
Grant 10,672,905 - Bao , et al. | 2020-06-02 |
Self-aligned Bottom Source/drain Epitaxial Growth In Vertical Field Effect Transistors
App 20200161451 - LEE; Choonghyun ; et al. | 2020-05-21 |
Replacement metal gate processes for vertical transport field-effect transistor
Grant 10,658,299 - Lee , et al. | 2020-05-19 |
Semiconductor Device And Method Of Forming The Semiconductor Device
App 20200152631 - Chao; Robin Hsin Kuo ; et al. | 2020-05-14 |
Vertical Transport Field-effect Transistor Including Dual Layer Top Spacer
App 20200152766 - Jagannathan; Hemanth ; et al. | 2020-05-14 |
Vertical Transport Field Effect Transistor Structure With Self-aligned Top Junction Through Early Top Source/drain Epitaxy
App 20200152791 - Mochizuki; Shogo ; et al. | 2020-05-14 |
Efficient metal-insulator-metal capacitor
Grant 10,651,266 - Chung , et al. | 2020-05-12 |
Complementary Metal Oxide Semiconductor Replacement Gate High-k Metal Gate Devices With Work Function Adjustments
App 20200144134 - Edge; Lisa F. ; et al. | 2020-05-07 |
Structure and method for multiple threshold voltage definition in advanced CMOS device technology
Grant 10,636,792 - Jagannathan , et al. | 2020-04-28 |
Single-fin Cmos Transistors With Embedded And Cladded Source/drain Structures
App 20200118886 - Miao; Xin ; et al. | 2020-04-16 |
Formation of common interfacial layer on Si/SiGe dual channel complementary metal oxide semiconductor device
Grant 10,615,083 - Bao , et al. | 2020-04-07 |
VFET metal gate patterning for vertical transport field effect transistor
Grant 10,615,082 - Anderson , et al. | 2020-04-07 |
Formation of pure silicon oxide interfacial layer on silicon-germanium channel field effect transistor device
Grant 10,615,043 - Ando , et al. | 2020-04-07 |
Fabrication of field effect transistors with different threshold voltages through modified channel interfaces
Grant 10,607,990 - Ando , et al. | 2020-03-31 |
Oxide Isolated Fin-type Field-effect Transistors
App 20200091319 - Bao; Ruqiang ; et al. | 2020-03-19 |
Liner And Cap Structures For Reducing Local Interconnect Vertical Resistance Without Compromising Reliability
App 20200090990 - Fan; Su Chen ; et al. | 2020-03-19 |
Liner And Cap Structures For Reducing Local Interconnect Vertical Resistance Without Compromising Reliability
App 20200090989 - Fan; Su Chen ; et al. | 2020-03-19 |
Vertical transport field effect transistor structure with self-aligned top junction through early top source/drain epitaxy
Grant 10,593,797 - Mochizuki , et al. | 2020-03-17 |
Wrap-around-contact Structure For Top Source/drain In Vertical Fets
App 20200075737 - Lee; Choonghyun ; et al. | 2020-03-05 |
Low-resistance Top Contact On Vtfet
App 20200075746 - Waskiewicz; Christopher J. ; et al. | 2020-03-05 |
Wrap-around-contact Structure For Top Source/drain In Vertical Fets
App 20200075736 - Lee; Choonghyun ; et al. | 2020-03-05 |
Approach to control over-etching of bottom spacers in vertical fin field effect transistor devices
Grant 10,580,881 - Bao , et al. | 2020-03-03 |
Gate-last Process For Vertical Transport Field-effect Transistor
App 20200066604 - Mochizuki; Shogo ; et al. | 2020-02-27 |
Replacement Metal Gate Process For Vertical Transport Field-effect Transistor With Self-aligned Shared Contacts
App 20200066903 - Bao; Ruqiang ; et al. | 2020-02-27 |
Replacement Metal Gate Process For Vertical Transport Field-effect Transistors With Multiple Threshold Voltages
App 20200066603 - Bao; Ruqiang ; et al. | 2020-02-27 |
VTFET devices utilizing low temperature selective epitaxy
Grant 10,573,746 - Jagannathan , et al. Feb | 2020-02-25 |
Complementary metal oxide semiconductor replacement gate high-k metal gate devices with work function adjustments
Grant 10,573,565 - Edge , et al. Feb | 2020-02-25 |
Gate Stack Reliability In Vertical Transport Field Effect Transistors
App 20200058766 - LEE; Choonghyun ; et al. | 2020-02-20 |
Vertical transport field-effect transistor including air-gap top spacer
Grant 10,559,671 - Jagannathan , et al. Feb | 2020-02-11 |
Vertical transport field-effect transistor including dual layer top spacer
Grant 10,559,672 - Jagannathan , et al. Feb | 2020-02-11 |
Multi-metal dipole doping to offer multi-threshold voltage pairs without channel doping for highly scaling CMOS device
Grant 10,546,787 - Bao , et al. Ja | 2020-01-28 |
Semiconductor device and method of forming the semiconductor device
Grant 10,541,239 - Chao , et al. Ja | 2020-01-21 |
Multi-metal Dipole Doping To Offer Multi-threshold Voltage Pairs Without Channel Doping For Highly Scaling Cmos Device
App 20200020594 - Bao; Ruqiang ; et al. | 2020-01-16 |
Multi-metal Dipole Doping To Offer Multi-threshold Voltage Pairs Without Channel Doping For Highly Scaling Cmos Device
App 20200020595 - Bao; Ruqiang ; et al. | 2020-01-16 |
Formation Of Pure Silicon Oxide Interfacial Layer On Silicon-germanium Channel Field Effect Transistor Device
App 20200020539 - Ando; Takashi ; et al. | 2020-01-16 |
Fast Recrystallization Of Hafnium Or Zirconium Based Oxides In Insulator-metal Structures
App 20200020762 - Frank; Martin M. ; et al. | 2020-01-16 |
FinFET with sigma recessed source/drain and un-doped buffer layer epitaxy for uniform junction formation
Grant 10,535,773 - Guo , et al. Ja | 2020-01-14 |
Approach To Control Over-etching Of Bottom Spacers In Vertical Fin Field Effect Transistor Devices
App 20200013877 - Bao; Ruqiang ; et al. | 2020-01-09 |
Formation of pure silicon oxide interfacial layer on silicon-germanium channel field effect transistor device
Grant 10,529,573 - Ando , et al. J | 2020-01-07 |
Vertical Transport Field Effect Transistor Structure With Self-aligned Top Junction Through Early Top Source/drain Epitaxy
App 20190393341 - Mochizuki; Shogo ; et al. | 2019-12-26 |
Reduced Static Random Access Memory (sram) Device Foot Print Through Controlled Bottom Source/drain Placement
App 20190378767 - Bao; Ruqiang ; et al. | 2019-12-12 |
Silicon-germanium Fin structure having silicon-rich outer surface
Grant 10,504,997 - Jagannathan , et al. Dec | 2019-12-10 |
Multi-metal Dipole Doping To Offer Multi-threshold Voltage Pairs Without Channel Doping For Highly Scaling Cmos Device
App 20190371676 - Bao; Ruqiang ; et al. | 2019-12-05 |
Formation Of Pure Silicon Oxide Interfacial Layer On Silicon-germanium Channel Field Effect Transistor Device
App 20190371611 - Ando; Takashi ; et al. | 2019-12-05 |
Wrap-around-contact structure for top source/drain in vertical FETs
Grant 10,483,361 - Lee , et al. Nov | 2019-11-19 |
Vertical transistors having improved gate length control using uniformly deposited spacers
Grant 10,461,172 - Waskiewicz , et al. Oc | 2019-10-29 |
Interface Charge Reduction for SiGe Surface
App 20190326429 - Sadana; Devendra ; et al. | 2019-10-24 |
MASKLESS EPITAXIAL GROWTH OF PHOSPHORUS-DOPED Si AND BORON-DOPED SiGe (Ge) FOR ADVANCED SOURCE/DRAIN CONTACT
App 20190318969 - Lee; Choonghyun ; et al. | 2019-10-17 |
Formation Of Self-aligned Bottom Spacer For Vertical Transistors
App 20190319114 - BAO; RUQIANG ; et al. | 2019-10-17 |
MASKLESS EPITAXIAL GROWTH OF PHOSPHORUS-DOPED Si AND BORON-DOPED SiGe (Ge) FOR ADVANCED SOURCE/DRAIN CONTACT
App 20190318970 - Lee; Choonghyun ; et al. | 2019-10-17 |
Formation of self-aligned bottom spacer for vertical transistors
Grant 10,439,043 - Bao , et al. O | 2019-10-08 |
Stacked Mim Capacitors With Self-aligned Contact To Reduce Via Enclosure
App 20190305076 - Ando; Takashi ; et al. | 2019-10-03 |
Maskless epitaxial growth of phosphorus-doped Si and boron-doped SiGe (Ge) for advanced source/drain contact
Grant 10,431,502 - Lee , et al. O | 2019-10-01 |
Structure And Method For Multiple Threshold Voltage Definition In Advanced Cmos Device Technology
App 20190287970 - Jagannathan; Hemanth ; et al. | 2019-09-19 |
Replacement Metal Gate Processes For Vertical Transport Field-effect Transistor
App 20190267325 - Lee; Choonghyun ; et al. | 2019-08-29 |
Simplified gate stack process to improve dual channel CMOS performance
Grant 10,395,080 - Jagannathan , et al. A | 2019-08-27 |
Simplified gate stack process to improve dual channel CMOS performance
Grant 10,395,079 - Jagannathan , et al. A | 2019-08-27 |
Multi-layer work function metal gates with similar gate thickness to achieve multi-Vt for vFETs
Grant 10,395,989 - Bao , et al. A | 2019-08-27 |
Leakage current reduction in stacked metal-insulator-metal capacitors
Grant 10,396,146 - Ando , et al. A | 2019-08-27 |
Structure and method for multiple threshold voltage definition in advanced CMOS device technology
Grant 10,396,076 - Jagannathan , et al. A | 2019-08-27 |
Vertical Transport Field-effect Transistor Including Air-gap Top Spacer
App 20190259854 - Jagannathan; Hemanth ; et al. | 2019-08-22 |
Leakage current reduction in stacked metal-insulator-metal capacitors
Grant 10,381,433 - Ando , et al. A | 2019-08-13 |
Interface charge reduction for SiGe surface
Grant 10,381,479 - Sadana , et al. A | 2019-08-13 |
Replacement metal gate processes for vertical transport field-effect transistor
Grant 10,373,912 - Lee , et al. | 2019-08-06 |
Dual Channel Silicon/silicon Germanium Complementary Metal Oxide Semiconductor Performance With Interface Engineering
App 20190229020 - Bao; Ruqiang ; et al. | 2019-07-25 |
Dual channel silicon/silicon germanium complementary metal oxide semiconductor performance with interface engineering
Grant 10,361,130 - Bao , et al. | 2019-07-23 |
Self-aligned double patterning formed fincut
Grant 10,361,129 - Sieg , et al. | 2019-07-23 |
Replacement Metal Gate Processes For Vertical Transport Field-effect Transistor
App 20190214343 - Lee; Choonghyun ; et al. | 2019-07-11 |
Method of forming a dual metal interconnect structure
Grant 10,340,355 - Adusumilli , et al. | 2019-07-02 |
Formation Of Full Metal Gate To Suppress Interficial Layer Growth
App 20190198500 - BAO; RUQIANG ; et al. | 2019-06-27 |
Vertical Transistors Having Improved Gate Length Control Using Uniformly Deposited Spacers
App 20190198642 - Waskiewicz; Christopher J. ; et al. | 2019-06-27 |
Formation Of Self-aligned Bottom Spacer For Vertical Transistors
App 20190189774 - BAO; RUQIANG ; et al. | 2019-06-20 |
Complementary Metal Oxide Semiconductor Replacement Gate High-k Metal Gate Devices With Work Function Adjustments
App 20190189524 - Edge; Lisa F. ; et al. | 2019-06-20 |
FORMATION OF COMMON INTERFACIAL LAYER ON Si/SiGe DUAL CHANNEL COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE
App 20190181052 - Bao; Ruqiang ; et al. | 2019-06-13 |
Vfet Metal Gate Patterning For Vertical Transport Field Effect Transistor
App 20190181051 - Anderson; Brent A. ; et al. | 2019-06-13 |
Vertical transport field-effect transistor including air-gap top spacer
Grant 10,319,833 - Jagannathan , et al. | 2019-06-11 |
Vertical Transport Field-effect Transistor Including Dual Layer Top Spacer
App 20190172924 - Jagannathan; Hemanth ; et al. | 2019-06-06 |
Vertical Transport Field-effect Transistor Including Air-gap Top Spacer
App 20190172927 - Jagannathan; Hemanth ; et al. | 2019-06-06 |
Multi-layer work function metal gates with similar gate thickness to achieve multi-VT for VFETs
Grant 10,312,147 - Bao , et al. June 4, 2 | 2019-06-04 |
Single source/drain epitaxy for co-integrating nFET semiconductor fins and pFET semiconductor fins
Grant 10,304,831 - Jagannathan , et al. | 2019-05-28 |
Maskless method to reduce source-drain contact resistance in CMOS devices
Grant 10,304,938 - Adusumilli , et al. | 2019-05-28 |
Complementary metal oxide semiconductor replacement gate high-K metal gate devices with work function adjustments
Grant 10,304,746 - Edge , et al. | 2019-05-28 |
Finfet With Sigma Recessed Source/drain And Un-doped Buffer Layer Epitaxy For Uniform Junction Formation
App 20190157457 - Guo; Dechao ; et al. | 2019-05-23 |
Formation of full metal gate to suppress interficial layer growth
Grant 10,297,598 - Bao , et al. | 2019-05-21 |
Uniform threshold voltage for nanosheet devices
Grant 10,297,671 - Bao , et al. | 2019-05-21 |
Multilayer dielectric for metal-insulator-metal capacitor (MIMCAP) capacitance and leakage improvement
Grant 10,290,700 - Ando , et al. | 2019-05-14 |
Approach to control over-etching of bottom spacers in vertical fin field effect transistor devices
Grant 10,283,620 - Bao , et al. | 2019-05-07 |
Formation of self-aligned bottom spacer for vertical transistors
Grant 10,276,687 - Bao , et al. | 2019-04-30 |
Formation of common interfacial layer on Si/SiGe dual channel complementary metal oxide semiconductor device
Grant 10,256,159 - Bao , et al. | 2019-04-09 |
Dual work function CMOS devices
Grant 10,256,161 - Jagannathan , et al. | 2019-04-09 |
Efficient metal-insulator-metal capacitor fabrication
Grant 10,256,289 - Chung , et al. | 2019-04-09 |
FinFET with sigma recessed source/drain and un-doped buffer layer epitaxy for uniform junction formation
Grant 10,249,758 - Guo , et al. | 2019-04-02 |
Dual channel CMOS having common gate stacks
Grant 10,249,540 - Ando , et al. | 2019-04-02 |
VFET metal gate patterning for vertical transport field effect transistor
Grant 10,236,219 - Anderson , et al. | 2019-03-19 |
Dual channel CMOS having common gate stacks
Grant 10,229,856 - Ando , et al. | 2019-03-12 |
Fabrication of silicon-germanium fin structure having silicon-rich outer surface
Grant 10,229,975 - Jagannathan , et al. | 2019-03-12 |
Vertical transport field-effect transistor including dual layer top spacer
Grant 10,229,986 - Jagannathan , et al. | 2019-03-12 |
Interface Charge Reduction for SiGe Surface
App 20190035923 - Sadana; Devendra ; et al. | 2019-01-31 |
Controlling threshold voltage in nanosheet transistors
Grant 10,170,316 - Jagannathan , et al. J | 2019-01-01 |
Finfet With Sigma Recessed Source/drain And Un-doped Buffer Layer Epitaxy For Uniform Junction Formation
App 20180358465 - Guo; Dechao ; et al. | 2018-12-13 |
Uniform Threshold Voltage For Nanosheet Devices
App 20180350935 - Bao; Ruqiang ; et al. | 2018-12-06 |
Efficient Metal-insulator-metal Capacitor
App 20180350896 - Chung; Kisup ; et al. | 2018-12-06 |
Method to reduce variability in contact resistance
Grant 10,147,680 - Adusumilli , et al. De | 2018-12-04 |
Bottom Contact Resistance Reduction On Vfet
App 20180337277 - Bao; Ruqiang ; et al. | 2018-11-22 |
Dual Channel Cmos Having Common Gate Stacks
App 20180337098 - Ando; Takashi ; et al. | 2018-11-22 |
Dual Channel Cmos Having Common Gate Stacks
App 20180337097 - Ando; Takashi ; et al. | 2018-11-22 |
Fabrication Of Field Effect Transistors With Different Threshold Voltages Through Modified Channel Interfaces
App 20180331096 - Ando; Takashi ; et al. | 2018-11-15 |
Bottom contact resistance reduction on VFET
Grant 10,128,372 - Bao , et al. November 13, 2 | 2018-11-13 |
Dual Channel Silicon/silicon Germanium Complementary Metal Oxide Semiconductor Performance With Interface Engineering
App 20180315663 - Bao; Ruqiang ; et al. | 2018-11-01 |
Multi-layer Work Function Metal Gates With Similar Gate Thickness To Achieve Multi-vt For Vfets
App 20180294191 - Bao; Ruqiang ; et al. | 2018-10-11 |
Multi-layer Work Function Metal Gates With Similar Gate Thickness To Achieve Multi-vt For Vfets
App 20180294192 - Bao; Ruqiang ; et al. | 2018-10-11 |
Vtfet Devices Utilizing Low Temperature Selective Epitaxy
App 20180294354 - JAGANNATHAN; HEMANTH ; et al. | 2018-10-11 |
FinFET with sigma recessed source/drain and un-doped buffer layer epitaxy for uniform junction formation
Grant 10,096,713 - Guo , et al. October 9, 2 | 2018-10-09 |
Semiconductor Device And Method Of Forming The Semiconductor Device
App 20180286862 - Chao; Robin Hsin-Ku ; et al. | 2018-10-04 |
Efficient metal-insulator-metal capacitor
Grant 10,090,378 - Chung , et al. October 2, 2 | 2018-10-02 |
Surface Area Enhancement For Stacked Metal-insulator-metal (mim) Capacitor
App 20180277623 - Ando; Takashi ; et al. | 2018-09-27 |
Structure And Method For Multiple Threshold Voltage Definition In Advanced Cmos Device Technology
App 20180277540 - Jagannathan; Hemanth ; et al. | 2018-09-27 |
Surface Area Enhancement For Stacked Metal-insulator-metal (mim) Capacitor
App 20180277621 - Ando; Takashi ; et al. | 2018-09-27 |
Bottom contact resistance reduction on VFET
Grant 10,084,082 - Bao , et al. September 25, 2 | 2018-09-25 |
Uniform threshold voltage for nanosheet devices
Grant 10,084,055 - Bao , et al. September 25, 2 | 2018-09-25 |
Efficient Metal-insulator-metal Capacitor
App 20180269271 - Chung; Kisup ; et al. | 2018-09-20 |
Efficient Metal-insulator-metal Capacitor Fabrication
App 20180269274 - Chung; Kisup ; et al. | 2018-09-20 |
Semiconductor device and method of forming the semiconductor device
Grant 10,079,233 - Chao , et al. September 18, 2 | 2018-09-18 |
Simplified Gate Stack Process To Improve Dual Channel Cmos Performance
App 20180247097 - Jagannathan; Hemanth ; et al. | 2018-08-30 |
Simplified Gate Stack Process To Improve Dual Channel Cmos Performance
App 20180247096 - Jagannathan; Hemanth ; et al. | 2018-08-30 |
Multilayer Dielectric For Metal-insulator-metal Capacitor (mimcap) Capacitance And Leakage Improvement
App 20180240863 - Ando; Takashi ; et al. | 2018-08-23 |
Multilayer Dielectric For Metal-insulator-metal Capacitor (mimcap) Capacitance And Leakage Improvement
App 20180240861 - Ando; Takashi ; et al. | 2018-08-23 |
Multilayer Dielectric For Metal-insulator-metal Capacitor (mimcap) Capacitance And Leakage Improvement
App 20180240862 - Ando; Takashi ; et al. | 2018-08-23 |
VTFET devices utilizing low temperature selective epitaxy
Grant 10,056,484 - Jagannathan , et al. August 21, 2 | 2018-08-21 |
Formation Of Pure Silicon Oxide Interfacial Layer On Silicon-germanium Channel Field Effect Transistor Device
App 20180233370 - Ando; Takashi ; et al. | 2018-08-16 |
Formation Of Pure Silicon Oxide Interfacial Layer On Silicon-germanium Channel Field Effect Transistor Device
App 20180233369 - Ando; Takashi ; et al. | 2018-08-16 |
Uniform Threshold Voltage For Nanosheet Devices
App 20180226484 - Bao; Ruqiang ; et al. | 2018-08-09 |
Method To Reduce Variability In Contact Resistance
App 20180226352 - ADUSUMILLI; Praneet ; et al. | 2018-08-09 |
Approach To Control Over-etching Of Bottom Spacers In Vertical Fin Field Effect Transistor Devices
App 20180212040 - Bao; Ruqiang ; et al. | 2018-07-26 |
Approach To Control Over-etching Of Bottom Spacers In Vertical Fin Field Effect Transistor Devices
App 20180212037 - Bao; Ruqiang ; et al. | 2018-07-26 |
Leakage Current Reduction In Stacked Metal-insulator-metal Capacitors
App 20180212018 - Ando; Takashi ; et al. | 2018-07-26 |
FORMATION OF COMMON INTERFACIAL LAYER ON Si/SiGe DUAL CHANNEL COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE
App 20180211885 - Bao; Ruqiang ; et al. | 2018-07-26 |
Formation Of Full Metal Gate To Suppress Interficial Layer Growth
App 20180204839 - BAO; RUQIANG ; et al. | 2018-07-19 |
Leakage Current Reduction In Stacked Metal-insulator-metal Capacitors
App 20180197944 - Ando; Takashi ; et al. | 2018-07-12 |
Leakage Current Reduction In Stacked Metal-insulator-metal Capacitors
App 20180197945 - Ando; Takashi ; et al. | 2018-07-12 |
Leakage Current Reduction In Stacked Metal-insulator-metal Capacitors
App 20180197943 - Ando; Takashi ; et al. | 2018-07-12 |
Leakage current reduction in stacked metal-insulator-metal capacitors
Grant 10,020,359 - Ando , et al. July 10, 2 | 2018-07-10 |
Formation of pure silicon oxide interfacial layer on silicon-germanium channel field effect transistor device
Grant 10,008,386 - Ando , et al. June 26, 2 | 2018-06-26 |
Multi-layer work function metal gates with similar gate thickness to achieve multi-Vt for vFETS
Grant 10,002,791 - Bao , et al. June 19, 2 | 2018-06-19 |
Simplified gate stack process to improve dual channel CMOS performance
Grant 9,984,263 - Jagannathan , et al. May 29, 2 | 2018-05-29 |
High-k Layer Chamfering To Prevent Oxygen Ingress In Replacement Metal Gate (rmg) Process
App 20180145150 - Ando; Takashi ; et al. | 2018-05-24 |
Method of cutting fins to create diffusion breaks for finFETs
Grant 9,978,748 - Jagannathan , et al. May 22, 2 | 2018-05-22 |
Low Resistance Source-drain Contacts Using High Temperature Silicides
App 20180138093 - ADUSUMILLI; Praneet ; et al. | 2018-05-17 |
Vtfet Devices Utilizing Low Temperature Selective Epitaxy
App 20180122937 - JAGANNATHAN; HEMANTH ; et al. | 2018-05-03 |
Low Resistance Source-drain Contacts Using High Temperature Silicides
App 20180122646 - ADUSUMILLI; Praneet ; et al. | 2018-05-03 |
Bottom contact resistance reduction on VFET
Grant 9,960,272 - Bao , et al. May 1, 2 | 2018-05-01 |
III-V fin on insulator
Grant 9,954,106 - Cheng , et al. April 24, 2 | 2018-04-24 |
Selective thickening of pFET dielectric
Grant 9,941,371 - Ando , et al. April 10, 2 | 2018-04-10 |
Simplified Gate Stack Process To Improve Dual Channel Cmos Performance
App 20180089479 - Jagannathan; Hemanth ; et al. | 2018-03-29 |
Semiconductor Device And Method Of Forming The Semiconductor Device
App 20180090494 - CHAO; Robin Hsin-Ku ; et al. | 2018-03-29 |
Controlling Threshold Voltage In Nanosheet Transistors
App 20180090326 - Jagannathan; Hemanth ; et al. | 2018-03-29 |
Maskless Method To Reduce Source-drain Contact Resistance In Cmos Devices
App 20180083114 - ADUSUMILLI; Praneet ; et al. | 2018-03-22 |
Formation Of Pure Silicon Oxide Interfacial Layer On Silicon-germanium Channel Field Effect Transistor Device
App 20180076040 - Ando; Takashi ; et al. | 2018-03-15 |
III-V semiconductor CMOS FinFET device
Grant 9,917,089 - Jagannathan , et al. March 13, 2 | 2018-03-13 |
Low Resistance Source-drain Contacts Using High Temperature Silicides
App 20180068904 - ADUSUMILLI; Praneet ; et al. | 2018-03-08 |
Low Resistance Source-drain Contacts Using High Temperature Silicides
App 20180068857 - ADUSUMILLI; Praneet ; et al. | 2018-03-08 |
Low Resistance Source-drain Contacts Using High Temperature Silicides
App 20180068903 - ADUSUMILLI; Praneet ; et al. | 2018-03-08 |
Maskless Method To Reduce Source-drain Contact Resistance In Cmos Devices
App 20180061956 - ADUSUMILLI; Praneet ; et al. | 2018-03-01 |
Replacement gate electrode with multi-thickness conductive metallic nitride layers
Grant 9,881,797 - Jagannathan , et al. January 30, 2 | 2018-01-30 |
Fabrication Of Silicon-germanium Fin Structure Having Silicon-rich Outer Surface
App 20180026100 - Jagannathan; Hemanth ; et al. | 2018-01-25 |
Fabrication Of Silicon-germanium Fin Structure Having Silicon-rich Outer Surface
App 20180026101 - Jagannathan; Hemanth ; et al. | 2018-01-25 |
Divot-free planarization dielectric layer for replacement gate
Grant 9,876,091 - Jagannathan , et al. January 23, 2 | 2018-01-23 |
High-K layer chamfering to prevent oxygen ingress in replacement metal gate (RMG) process
Grant 9,865,703 - Ando , et al. January 9, 2 | 2018-01-09 |
VTFET devices utilizing low temperature selective epitaxy
Grant 9,865,730 - Jagannathan , et al. January 9, 2 | 2018-01-09 |
Method to reduce variability in contact resistance
Grant 9,837,357 - Adusumilli , et al. December 5, 2 | 2017-12-05 |
Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme
Grant 9,824,930 - Ando , et al. November 21, 2 | 2017-11-21 |
Controlling threshold voltage in nanosheet transistors
Grant 9,818,616 - Jagannathan , et al. November 14, 2 | 2017-11-14 |
Dual Metal Interconnect Structure
App 20170278939 - Adusumilli; Praneet ; et al. | 2017-09-28 |
Fabrication of silicon-germanium fin structure having silicon-rich outer surface
Grant 9,773,875 - Jagannathan , et al. September 26, 2 | 2017-09-26 |
Stacked planar capacitors with scaled EOT
Grant 9,761,655 - Ando , et al. September 12, 2 | 2017-09-12 |
Isolation of bulk FET devices with embedded stressors
Grant 9,761,722 - Jagannathan , et al. September 12, 2 | 2017-09-12 |
SINGLE SOURCE/DRAIN EPITAXY FOR CO-INTEGRATING nFET SEMICONDUCTOR FINS AND pFET SEMICONDUCTOR FINS
App 20170256546 - Jagannathan; Hemanth ; et al. | 2017-09-07 |
Structure for integration of an III-V compound semiconductor on SOI
Grant 9,754,967 - Jagannathan , et al. September 5, 2 | 2017-09-05 |
Dual Metal Interconnect Structure
App 20170243947 - Adusumilli; Praneet ; et al. | 2017-08-24 |
Simplified gate stack process to improve dual channel CMOS performance
Grant 9,741,822 - Jagannathan , et al. August 22, 2 | 2017-08-22 |
Dual metal interconnect structure
Grant 9,741,812 - Adusumilli , et al. August 22, 2 | 2017-08-22 |
Dual Work Function Cmos Devices
App 20170236759 - Jagannathan; Hemanth ; et al. | 2017-08-17 |
Iii-v Semiconductor Cmos Finfet Device
App 20170229459 - Jagannathan; Hemanth ; et al. | 2017-08-10 |
Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme
Grant 9,721,842 - Ando , et al. August 1, 2 | 2017-08-01 |
Metal cap protection layer for gate and contact metallization
Grant 9,722,038 - Adusumilli , et al. August 1, 2 | 2017-08-01 |
High-k Layer Chamfering To Prevent Oxygen Ingress In Replacement Metal Gate (rmg) Process
App 20170194459 - Ando; Takashi ; et al. | 2017-07-06 |
Method Of Cutting Fins To Create Diffusion Breaks For Finfets
App 20170170171 - Jagannathan; Hemanth ; et al. | 2017-06-15 |
Method Of Cutting Fins To Create Diffusion Breaks For Finfets
App 20170170176 - Jagannathan; Hemanth ; et al. | 2017-06-15 |
Complementary Metal Oxide Semiconductor Replacement Gate High-k Metal Gate Devices With Work Function Adjustments
App 20170154825 - Edge; Lisa F. ; et al. | 2017-06-01 |
Contained punch through stopper for CMOS structures on a strain relaxed buffer substrate
Grant 9,666,486 - Ebrish , et al. May 30, 2 | 2017-05-30 |
Single source/drain epitaxy for co-integrating nFET semiconductor fins and pFET semiconductor fins
Grant 9,659,938 - Jagannathan , et al. May 23, 2 | 2017-05-23 |
Controlling threshold voltage in nanosheet transistors
Grant 9,653,537 - Jagannathan , et al. May 16, 2 | 2017-05-16 |
Structure For Integration Of An Iii-v Compound Semiconductor On Soi
App 20170125444 - Jagannathan; Hemanth ; et al. | 2017-05-04 |
Structure and method for replacement gate integration with self-aligned contacts
Grant 9,627,510 - Jagannathan , et al. April 18, 2 | 2017-04-18 |
Stratified gate dielectric stack for gate dielectric leakage reduction
Grant 9,627,214 - Jagannathan , et al. April 18, 2 | 2017-04-18 |
Iii-v Fin On Insulator
App 20170084732 - Cheng; Kangguo ; et al. | 2017-03-23 |
Metal Cap Protection Layer For Gate And Contact Metallization
App 20170077256 - ADUSUMILLI; PRANEET ; et al. | 2017-03-16 |
Silicon-germanium semiconductor devices and method of making
Grant 9,595,449 - Jagannathan , et al. March 14, 2 | 2017-03-14 |
Fin cut enabling single diffusion breaks
Grant 9,589,845 - Jagannathan , et al. March 7, 2 | 2017-03-07 |
Solid state diffusion doping for bulk finFET devices
Grant 9,583,489 - Anderson , et al. February 28, 2 | 2017-02-28 |
Dual metal gate electrode for reducing threshold voltage
Grant 9,577,062 - Jagannathan , et al. February 21, 2 | 2017-02-21 |
Selective thickening of PFET dielectric
Grant 9,570,569 - Ando , et al. February 14, 2 | 2017-02-14 |
Structure for integration of an III-V compound semiconductor on SOI
Grant 9,548,319 - Jagannathan , et al. January 17, 2 | 2017-01-17 |
Replacement metal gate finFET
Grant 9,530,651 - Jagannathan , et al. December 27, 2 | 2016-12-27 |
III-V semiconductor CMOS FinFET device
Grant 9,515,073 - Jagannathan , et al. December 6, 2 | 2016-12-06 |
Stratified gate dielectric stack for gate dielectric leakage reduction
Grant 9,514,948 - Jagannathan , et al. December 6, 2 | 2016-12-06 |
Method Of Patterning Dopant Films In High-k Dielectrics In A Soft Mask Integration Scheme
App 20160351452 - Ando; Takashi ; et al. | 2016-12-01 |
Selective Thickening Of Pfet Dielectric
App 20160343622 - Ando; Takashi ; et al. | 2016-11-24 |
Selective thickening of pFET dielectric
Grant 9,496,183 - Ando , et al. November 15, 2 | 2016-11-15 |
Selective Thickening Of Pfet Dielectric
App 20160329409 - Ando; Takashi ; et al. | 2016-11-10 |
Selective Thickening Of Pfet Dielectric
App 20160329254 - Ando; Takashi ; et al. | 2016-11-10 |
Complementary metal oxide semiconductor replacement gate high-k metal gate devices with work function adjustments
Grant 9,490,255 - Edge , et al. November 8, 2 | 2016-11-08 |
III-V fin on insulator
Grant 9,484,439 - Cheng , et al. November 1, 2 | 2016-11-01 |
Stratified Gate Dielectric Stack For Gate Dielectric Leakage Reduction
App 20160315166 - Jagannathan; Hemanth ; et al. | 2016-10-27 |
Stratified Gate Dielectric Stack For Gate Dielectric Leakage Reduction
App 20160314977 - Jagannathan; Hemanth ; et al. | 2016-10-27 |
Method of patterning dopant films in high-K dielectrics in a soft mask integration scheme
Grant 9,472,419 - Ando , et al. October 18, 2 | 2016-10-18 |
Nitridation on HDP oxide before high-k deposition to prevent oxygen ingress
Grant 9,472,408 - Ando , et al. October 18, 2 | 2016-10-18 |
Replacement metal gate FinFET
Grant 9,472,407 - Jagannathan , et al. October 18, 2 | 2016-10-18 |
Divot-free Planarization Dielectric Layer For Replacement Gate
App 20160276457 - Jagannathan; Hemanth ; et al. | 2016-09-22 |
Structure For Integration Of An Iii-v Compound Semiconductor On Soi
App 20160268310 - Jagannathan; Hemanth ; et al. | 2016-09-15 |
Replacement metal gate FinFET
Grant 9,437,436 - Jagannathan , et al. September 6, 2 | 2016-09-06 |
Non-volatile memory device employing semiconductor nanoparticles
Grant 9,425,080 - Cheng , et al. August 23, 2 | 2016-08-23 |
Nitridation on HDP oxide before high-k deposition to prevent oxygen ingress
Grant 9,412,596 - Ando , et al. August 9, 2 | 2016-08-09 |
Nitridation On Hdp Oxide Before High-k Deposition To Prevent Oxygen Ingress
App 20160225628 - Ando; Takashi ; et al. | 2016-08-04 |
Nitridation On Hdp Oxide Before High-k Deposition To Prevent Oxygen Ingress
App 20160225629 - Ando; Takashi ; et al. | 2016-08-04 |
Integration of multiple threshold voltage devices for complementary metal oxide semiconductor using full metal gate
Grant 9,406,679 - Edge , et al. August 2, 2 | 2016-08-02 |
SINGLE SOURCE/DRAIN EPITAXY FOR CO-INTEGRATING nFET SEMICONDUCTOR FINS AND pFET SEMICONDUCTOR FINS
App 20160211265 - Jagannathan; Hemanth ; et al. | 2016-07-21 |
Forming wrap-around silicide contact on finFET
Grant 9,397,197 - Guo , et al. July 19, 2 | 2016-07-19 |
Stratified gate dielectric stack for gate dielectric leakage reduction
Grant 9,385,207 - Jagannathan , et al. July 5, 2 | 2016-07-05 |
Method Of Patterning Dopant Films In High-k Dielectrics In A Soft Mask Integration Scheme
App 20160190015 - Ando; Takashi ; et al. | 2016-06-30 |
Divot-free planarization dielectric layer for replacement gate
Grant 9,356,121 - Jagannathan , et al. May 31, 2 | 2016-05-31 |
Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme
Grant 9,330,938 - Ando , et al. May 3, 2 | 2016-05-03 |
Dual Metal Gate Electrode For Reducing Threshold Voltage
App 20160118470 - Jagannathan; Hemanth ; et al. | 2016-04-28 |
Forming wrap-around silicide contact on finFET
Grant 9,318,581 - Guo , et al. April 19, 2 | 2016-04-19 |
Single Source/drain Epitaxy For Co-integrating Nfet Semiconductor Fins And Pfet Semiconductor Fins
App 20160093618 - Jagannathan; Hemanth ; et al. | 2016-03-31 |
Single source/drain epitaxy for co-integrating nFET semiconductor fins and pFET semiconductor fins
Grant 9,299,706 - Jagannathan , et al. March 29, 2 | 2016-03-29 |
Method Of Patterning Dopant Films In High-k Dielectrics In A Soft Mask Integration Scheme
App 20160049337 - Ando; Takashi ; et al. | 2016-02-18 |
Method Of Patterning Dopant Films In High-k Dielectrics In A Soft Mask Integration Scheme
App 20160027664 - Ando; Takashi ; et al. | 2016-01-28 |
Replacement gate electrode with multi-thickness conductive metallic nitride layers
Grant 9,202,698 - Jagannathan , et al. December 1, 2 | 2015-12-01 |
Integration Of Multiple Threshold Voltage Devices For Complementary Metal Oxide Semiconductor Using Full Metal Gate
App 20150333065 - Edge; Lisa F. ; et al. | 2015-11-19 |
Replacement metal gate transistor with controlled threshold voltage
Grant 9,190,409 - Manabe , et al. November 17, 2 | 2015-11-17 |
Structure And Method To Obtain Eot Scaled Dielectric Stacks
App 20150311303 - Jagannathan; Hemanth ; et al. | 2015-10-29 |
Structure And Method To Obtain Eot Scaled Dielectric Stacks
App 20150311127 - Jagannathan; Hemanth ; et al. | 2015-10-29 |
Replacement metal gate FinFET
Grant 9,153,447 - Jagannathan , et al. October 6, 2 | 2015-10-06 |
Structure And Method To Obtain Eot Scaled Dielectric Stacks
App 20150279746 - Jagannathan; Hemanth ; et al. | 2015-10-01 |
Structure And Method To Obtain Eot Scaled Dielectric Stacks
App 20150279937 - Jagannathan; Hemanth ; et al. | 2015-10-01 |
Integration of multiple threshold voltage devices for complementary metal oxide semiconductor using full metal gate
Grant 9,093,558 - Edge , et al. July 28, 2 | 2015-07-28 |
Replacement metal gate FinFET
Grant 9,093,376 - Jagannathan , et al. July 28, 2 | 2015-07-28 |
Structure and method to realize conformal doping in deep trench applications
Grant 9,064,744 - Basker , et al. June 23, 2 | 2015-06-23 |
Stratified Gate Dielectric Stack For Gate Dielectric Leakage Reduction
App 20150171182 - Jagannathan; Hemanth ; et al. | 2015-06-18 |
Structure and method to obtain EOT scaled dielectric stacks
Grant 9,059,314 - Jagannathan , et al. June 16, 2 | 2015-06-16 |
Robust replacement gate integration
Grant 9,054,127 - Jagannathan , et al. June 9, 2 | 2015-06-09 |
Replacement Metal Gate Finfet
App 20150137245 - Jagannathan; Hemanth ; et al. | 2015-05-21 |
Replacement Metal Gate Finfet
App 20150137244 - Jagannathan; Hemanth ; et al. | 2015-05-21 |
Replacement Metal Gate Finfet
App 20150137243 - Jagannathan; Hemanth ; et al. | 2015-05-21 |
Non-volatile Memory Device Employing Semiconductor Nanoparticles
App 20150132896 - Cheng; Kangguo ; et al. | 2015-05-14 |
Stratified gate dielectric stack for gate dielectric leakage reduction
Grant 9,006,094 - Jagannathan , et al. April 14, 2 | 2015-04-14 |
Memory device having multiple dielectric gate stacks and related methods
Grant 9,006,816 - Khare , et al. April 14, 2 | 2015-04-14 |
Non-volatile memory device employing semiconductor nanoparticles
Grant 8,994,006 - Cheng , et al. March 31, 2 | 2015-03-31 |
Divot-free Planarization Dielectric Layer For Replacement Gate
App 20150001598 - Jagannathan; Hemanth ; et al. | 2015-01-01 |
Borderless contact for an aluminum-containing gate
Grant 8,906,793 - Kanakasabapathy , et al. December 9, 2 | 2014-12-09 |
FinFET device having reduce capacitance, access resistance, and contact resistance
Grant 8,900,936 - Kulkarni , et al. December 2, 2 | 2014-12-02 |
High performance non-planar semiconductor devices with metal filled inter-fin gaps
Grant 8,901,667 - Jagannathan , et al. December 2, 2 | 2014-12-02 |
Semiconductor device including multiple metal semiconductor alloy region and a gate structure covered by a continuous encapsulating layer
Grant 8,901,670 - Kanakasabapathy , et al. December 2, 2 | 2014-12-02 |
Structure and method for stress latching in non-planar semiconductor devices
Grant 8,890,255 - Kanakasabapathy , et al. November 18, 2 | 2014-11-18 |
Robust Replacement Gate Integration
App 20140327076 - Jagannathan; Hemanth ; et al. | 2014-11-06 |
Methods of manufacturing finFET devices
Grant 8,877,615 - Basker , et al. November 4, 2 | 2014-11-04 |
Memory device having multiple dielectric gate stacks with first and second dielectric layers and related methods
Grant 8,860,123 - Khare , et al. October 14, 2 | 2014-10-14 |
Memory Device Having Multiple Dielectric Gate Stacks And Related Methods
App 20140291749 - KHARE; Prasanna ; et al. | 2014-10-02 |
Memory Device Having Multiple Dielectric Gate Stacks With First And Second Dielectric Layers And Related Methods
App 20140291750 - KHARE; Prasanna ; et al. | 2014-10-02 |
finFET devices
Grant 8,847,323 - Basker , et al. September 30, 2 | 2014-09-30 |
Low external resistance ETSOI transistors
Grant 8,835,232 - Jagannathan , et al. September 16, 2 | 2014-09-16 |
Robust replacement gate integration
Grant 8,835,237 - Jagannathan , et al. September 16, 2 | 2014-09-16 |
Control of threshold voltages in high-k metal gate stack and structures for CMOS devices
Grant 8,835,260 - Jagannathan , et al. September 16, 2 | 2014-09-16 |
Replacement Metal Gate Transistor With Controlled Threshold Voltage
App 20140239407 - MANABE; Kenzo ; et al. | 2014-08-28 |
Method and structure for shallow trench isolation to mitigate active shorts
Grant 8,790,991 - Cummings , et al. July 29, 2 | 2014-07-29 |
Robust Replacement Gate Integration
App 20140124873 - Jagannathan; Hemanth ; et al. | 2014-05-08 |
Replacement Gate Electrode With Multi-thickness Conductive Metallic Nitride Layers
App 20140117466 - Jagannathan; Hemanth ; et al. | 2014-05-01 |
Replacement Metal Gate Finfet
App 20140110785 - Jagannathan; Hemanth ; et al. | 2014-04-24 |
Replacement Metal Gate Finfet
App 20140110784 - Jagannathan; Hemanth ; et al. | 2014-04-24 |
Non-volatile Memory Device Employing Semiconductor Nanoparticles
App 20140091281 - Cheng; Kangguo ; et al. | 2014-04-03 |
High Performance Non-planar Semiconductor Devices With Metal Filled Inter-fin Gaps
App 20140061815 - JAGANNATHAN; HEMANTH ; et al. | 2014-03-06 |
Integration Of Multiple Threshold Voltage Devices For Complementary Metal Oxide Semiconductor Using Full Metal Gate
App 20140054717 - Edge; Lisa F. ; et al. | 2014-02-27 |
Structure And Method To Realize Conformal Doping In Deep Trench Applications
App 20140038382 - Basker; Veeraraghavan S. ; et al. | 2014-02-06 |
Structure And Method To Realize Conformal Doping In Deep Trench Applications
App 20140035038 - Basker; Veeraraghavan S. ; et al. | 2014-02-06 |
Etch Resistant Barrier For Replacement Gate Integration
App 20130307079 - JAGANNATHAN; HEMANTH ; et al. | 2013-11-21 |
Borderless Contact For An Aluminum-Containing Gate
App 20130307033 - KANAKASABAPATHY; Sivananda K. ; et al. | 2013-11-21 |
Borderless Contact For An Aluminum-containing Gate
App 20130309852 - KANAKASABAPATHY; Sivananda K. ; et al. | 2013-11-21 |
Etch Resistant Barrier For Replacement Gate Integration
App 20130309856 - JAGANNATHAN; HEMANTH ; et al. | 2013-11-21 |
Divot-free Planarization Dielectric Layer For Replacement Gate
App 20130292746 - Jagannathan; Hemanth ; et al. | 2013-11-07 |
Stratified Gate Dielectric Stack For Gate Dielectric Leakage Reduction
App 20130277743 - Jagannathan; Hemanth ; et al. | 2013-10-24 |
Stratified Gate Dielectric Stack For Gate Dielectric Leakage Reduction
App 20130280902 - Jagannathan; Hemanth ; et al. | 2013-10-24 |
Replacement Gate With Reduced Gate Leakage Current
App 20130256802 - Jagannathan; Hemanth ; et al. | 2013-10-03 |
Replacement Gate With Reduced Gate Leakage Current
App 20130260549 - Jagannathan; Hemanth ; et al. | 2013-10-03 |
Divot-free Planarization Dielectric Layer For Replacement Gate
App 20130221413 - Jagannathan; Hemanth ; et al. | 2013-08-29 |
Replacement Gate Electrode With Multi-thickness Conductive Metallic Nitride Layers
App 20130221441 - Jagannathan; Hemanth ; et al. | 2013-08-29 |
Replacement Gate Electrode With Multi-thickness Conductive Metallic Nitride Layers
App 20130224939 - Jagannathan; Hemanth ; et al. | 2013-08-29 |
Replacement Gate Electrode With A Tantalum Alloy Metal Layer
App 20130214364 - Jagannathan; Hemanth ; et al. | 2013-08-22 |
Low External Resistance Etsoi Transistors
App 20130214358 - Jagannathan; Hemanth ; et al. | 2013-08-22 |
Low External Resistance Etsoi Transistors
App 20130217190 - Jagannathan; Hemanth ; et al. | 2013-08-22 |
Replacement Gate Electrode With A Tantalum Alloy Metal Layer
App 20130217220 - Jagannathan; Hemanth ; et al. | 2013-08-22 |
Structure And Method For Stress Latching In Non-planar Semiconductor Devices
App 20130187234 - Kanakasabapathy; Sivananda K. ; et al. | 2013-07-25 |
Semiconductor Device Including Multiple Metal Semiconductor Alloy Region And A Gate Structure Covered By A Continuous Encapsulating Layer
App 20120326217A1 - | 2012-12-27 |
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