Izumi; Katsutoshi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Izumi; Katsutoshi.The latest application filed is for "method for producing single crystal sic substrate and single crystal sic substrate produced by the same".

Company Profile

0.17.11

Izumi; Katsutoshi - Itoh JP
Izumi; Katsutoshi - Itoh City JP
Izumi; Katsutoshi - Sakai N/A JP
Izumi; Katsutoshi - Sakai-shi JP
Izumi; Katsutoshi - Osaka JP
Izumi; Katsutoshi - Tokyo JP
Izumi; Katsutoshi - Kanagawa JP
Izumi; Katsutoshi - Seki JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method for producing single crystal SiC substrate and single crystal SiC substrate produced by the same Grant 8,906,786 - Izumi , et al. December 9, 2	2014-12-09
Method For Producing Single Crystal Sic Substrate And Single Crystal Sic Substrate Produced By The Same App 20140051235 - Izumi; Katsutoshi ; et al.	2014-02-20
Method for producing single crystal SiC substrate and single crystal SiC substrate produced by the same Grant 8,603,901 - Izumi , et al. December 10, 2	2013-12-10
Method for manufacturing nitrogen compound semiconductor substrate and nitrogen compound semiconductor substrate, and method for manufacturing single crystal SiC substrate and single crystal SiC substrate Grant 8,563,442 - Kawamura , et al. October 22, 2	2013-10-22
Method For Manufacturing Nitrogen Compound Semiconductor Substrate And Nitrogen Compound Semiconductor Substrate, And Method For Manufacturing Single Crystal Sic Substrate And Single Crystal Sic Substrate App 20110089433 - Kawamura; Keisuke ; et al.	2011-04-21
METHOD FOR PRODUCING SINGLE CRYSTAL SiC SUBSTRATE AND SINGLE CRYSTAL SiC SUBSTRATE PRODUCED BY THE SAME App 20100252837 - Izumi; Katsutoshi ; et al.	2010-10-07
Manufacturing method of monocrystalline gallium nitride localized substrate Grant 7,393,763 - Izumi , et al. July 1, 2	2008-07-01
Manufacturing apparatus for buried insulating layer-type semiconductor silicon carbide substrate Grant 7,128,788 - Izumi , et al. October 31, 2	2006-10-31
Manufacturing method for buried insulating layer-type semiconductor silicon carbide substrate Grant 7,084,049 - Izumi , et al. August 1, 2	2006-08-01
Manufacturing device for buried insulating layer type single crystal silicon carbide substrate Grant 7,077,875 - Izumi , et al. July 18, 2	2006-07-18
Method for manufacturing buried insulating layer type single crystal silicon carbide substrate Grant 6,927,144 - Izumi , et al. August 9, 2	2005-08-09
Manufacturing method of monocrystalline gallium nitride localized substrate App 20050148108 - Izumi, Katsutoshi ; et al.	2005-07-07
Manufacturing device for buried insulating layer type single crystal silicon carbide substrate App 20050136611 - Izumi, Katsutoshi ; et al.	2005-06-23
Method for Manufacturing Buried Insulating Layer Type Single Crystal Silicon Carbide Substrate and Manufacturing Device for the Same App 20040191966 - IZUMI, Katsutoshi ; et al.	2004-09-30
Manufacturing apparatus for buried insulating layer-type semiconductor silicon carbide substrate App 20040173154 - Izumi, Katsutoshi ; et al.	2004-09-09
Single crystal silicon carbide thin film fabrication method and fabrication apparatus of the same Grant 6,773,508 - Izumi , et al. August 10, 2	2004-08-10
Etching method and etching apparatus of carbon thin film Grant 6,743,729 - Izumi , et al. June 1, 2	2004-06-01
Monocrystalline gallium nitride localized substrate and manufacturing method thereof App 20040099871 - Izumi, Katsutoshi ; et al.	2004-05-27
Manufacturing method for buried insulating layer-type semiconductor silicon carbide substrate and manufacturing apparatus thereof App 20030148586 - Izumi, Katsutoshi ; et al.	2003-08-07
Single crystal silicon carbide thin film fabrication method and fabrication apparatus of the same App 20020185058 - Izumi, Katsutoshi ; et al.	2002-12-12
Etching method and etching apparatus of carbon thin film App 20020130107 - Izumi, Katsutoshi ; et al.	2002-09-19
Method of making semiconductor device having SIMOX structure Grant 5,665,613 - Nakashima , et al. September 9, 1	1997-09-09
SOI substrate and method of producing the same Grant 5,658,809 - Nakashima , et al. August 19, 1	1997-08-19
Method of making field-effect semiconductor device on SOI Grant 5,459,347 - Omura , et al. October 17, 1	1995-10-17
Method of manufacturing SOI semiconductor element Grant 5,188,973 - Omura , et al. February 23, 1	1993-02-23
Semiconductor device having buried insulating layer Grant 4,241,359 - Izumi , et al. December 23, 1	1980-12-23

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