loadpatents
Patent applications and USPTO patent grants for Iwatake; Michael M..The latest application filed is for "fabrication of via contacts having dual silicide layers".
Patent | Date |
---|---|
Via contact structure having dual silicide layers Grant 8,288,828 - Iwatake , et al. October 16, 2 | 2012-10-16 |
Fabrication of via contacts having dual silicide layers App 20070077753 - Iwatake; Michael M. ;   et al. | 2007-04-05 |
Dual Silicide Via Contact Structure And Process App 20060051959 - Iwatake; Michael M. ;   et al. | 2006-03-09 |
Low Cu percentages for reducing shorts in AlCu lines Grant 6,960,306 - Iggulden , et al. November 1, 2 | 2005-11-01 |
Method to enhance epitaxial regrowth in amorphous silicon contacts Grant 6,740,568 - Wang , et al. May 25, 2 | 2004-05-25 |
Low Cu percentages for reducing shorts in AlCu lines App 20040020891 - Iggulden, Roy C. ;   et al. | 2004-02-05 |
Method to enhance epi-regrowth in amorphous poly CB contacts App 20040018680 - Wang, Yun Yu ;   et al. | 2004-01-29 |
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