Iwata; Dai

Patent Applications and Registrations

Patent applications and USPTO patent grants for Iwata; Dai.The latest application filed is for "gate material-based capacitor and resistor structures and methods of forming the same".

Company Profile

3.6.6

Iwata; Dai - Yokkaichi JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Gate material-based capacitor and resistor structures and methods of forming the same Grant 11,322,597 - Kodate , et al. May 3, 2	2022-05-03
Gate Material-based Capacitor And Resistor Structures And Methods Of Forming The Same App 20220068915 - KODATE; Hokuto ; et al.	2022-03-03
Gate Material-based Capacitor And Resistor Structures And Methods Of Forming The Same App 20220069097 - KODATE; Hokuto ; et al.	2022-03-03
CMOS devices containing asymmetric contact via structures Grant 10,770,459 - Iwata , et al. Sep	2020-09-08
Multi-tier three-dimensional memory devices containing annular dielectric spacers within memory openings and methods of making the same Grant 10,748,919 - Iwata , et al. A	2020-08-18
Cmos Devices Containing Asymmetric Contact Via Structures And Method Of Making The Same App 20190296012 - Iwata; Dai ; et al.	2019-09-26
Multi-tier Three-dimensional Memory Devices Containing Annular Dielectric Spacers Within Memory Openings And Methods Of Making The Same App 20180277566 - Iwata; Dai ; et al.	2018-09-27
Multi-tier three-dimensional memory devices containing annular dielectric spacers within memory openings and methods of making the same Grant 9,991,280 - Nakamura , et al. June 5, 2	2018-06-05
Multi-tier Three-dimensional Memory Devices Containing Annular Dielectric Spacers Within Memory Openings And Methods Of Making The Same App 20170236835 - NAKAMURA; Tadashi ; et al.	2017-08-17
Select gates with central open areas Grant 9,613,971 - Yaegashi , et al. April 4, 2	2017-04-04
Select Gates with Central Open Areas App 20170025425 - Yaegashi; Masahiro ; et al.	2017-01-26
Select gates with select gate dielectric first Grant 9,443,862 - Iwata , et al. September 13, 2	2016-09-13

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