Iwamatsu; Seiichi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Iwamatsu; Seiichi.The latest application filed is for "method for displaying bioinformation using millimeter-wave band electromagnetic wave, device for acquiring and displaying bioinformation".

Company Profile

0.17.3

Iwamatsu; Seiichi - Nagano JP
Iwamatsu; Seiichi - Minato-ku JP
Iwamatsu; Seiichi - Chino JP
Iwamatsu; Seiichi - Suwa JP
Iwamatsu; Seiichi - Hamuramachi JP
Iwamatsu; Seiichi - Tokyo JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Electron beam duplication lithography method Grant 7,306,896 - Iwamatsu December 11, 2	2007-12-11
Method for Displaying Bioinformation Using Millimeter-Wave Band Electromagnetic Wave, Device for Acquiring and Displaying Bioinformation App 20070230767 - Iwamatsu; Seiichi ; et al.	2007-10-04
Electron beam duplication lithography method App 20060151719 - Iwamatsu; Seiichi	2006-07-13
Electron beam duplication lithography method and apparatus Grant 7,011,927 - Iwamatsu March 14, 2	2006-03-14
Electron beam duplication lithography method and apparatus App 20050121623 - Iwamatsu, Seiichi	2005-06-09
Electron beam duplication lithography method and apparatus Grant 6,849,856 - Iwamatsu February 1, 2	2005-02-01
Method of forming optimized thin film metal interconnects in integrated circuit structures of apparatus to reduce circuit operational delay Grant 5,504,037 - Iwamatsu April 2, 1	1996-04-02
Semiconductor device with enhanced via or contact hole connection between an interconnect layer and a connecting region Grant 5,327,011 - Iwamatsu July 5, 1	1994-07-05
Thin-film SOI semiconductor device having heavily doped diffusion regions beneath the channels of transistors Grant 5,294,821 - Iwamatsu March 15, 1	1994-03-15
Trench gate metal oxide semiconductor field effect transistor Grant 5,142,640 - Iwamatsu August 25, 1	1992-08-25
Field effect type Josephson transistor Grant 5,071,832 - Iwamatsu December 10, 1	1991-12-10
Ion beam gun and ion beam exposure device Grant 4,902,897 - Iwamatsu February 20, 1	1990-02-20
Semiconductor substrate Grant RE33,096 - Iwamatsu October 17, 1	1989-10-17
Semiconductor substrate Grant 4,576,851 - Iwamatsu March 18, 1	1986-03-18
X-ray source Grant 4,538,291 - Iwamatsu August 27, 1	1985-08-27
High pressure chemical vapor deposition Grant 4,404,236 - Komatsu , et al. September 13, 1	1983-09-13
Method of fabricating an integrated circuit device utilizing electron beam irradiation and selective oxidation Grant 4,348,804 - Ogawa , et al. September 14, 1	1982-09-14
Light-reflection type pattern forming system Grant 4,231,657 - Iwamatsu November 4, 1	1980-11-04
MIS semiconductor device and method of manufacturing the same Grant 4,041,518 - Shimizu , et al. August 9, 1	1977-08-09
Method of manufacturing MOS type semiconductor devices Grant 3,919,008 - Iwamatsu November 11, 1	1975-11-11

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