Ivantsov; Vladimir

Patent Applications and Registrations

Patent applications and USPTO patent grants for Ivantsov; Vladimir.The latest application filed is for "methods for producing composite gan nanocolumns and light emitting structures made from the methods".

Company Profile

0.24.16

Ivantsov; Vladimir - Oceanside CA
Ivantsov; Vladimir - Hyattsville MD
Ivantsov; Vladimir - Beltsville MD US
Ivantsov; Vladimir - Adelphi MD US
Ivantsov; Vladimir - Gaithersburg MD US
Ivantsov; Vladimir - Gaithersberg MD

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Methods for producing composite GaN nanocolumns and light emitting structures made from the methods Grant 11,322,652 - Volkova , et al. May 3, 2	2022-05-03
Methods for Producing Composite GaN Nanocolumns and Light Emitting Structures Made from the Methods App 20170170363 - Volkova; Anna ; et al.	2017-06-15
Backflow reactor liner for protection of growth surfaces and for balancing flow in the growth liner Grant 9,577,143 - Shapovalov , et al. February 21, 2	2017-02-21
Semi-polar III-nitride films and materials and method for making the same Grant 9,443,727 - Soukhoveev , et al. September 13, 2	2016-09-13
Apparatus and methods for controlling gas flows in a HVPE reactor Grant 9,416,464 - Dmitriev , et al. August 16, 2	2016-08-16
Free HCL used during pretreatment and AlGaN growth to control growth layer orientation and inclusions Grant 9,023,673 - Shapovalov , et al. May 5, 2	2015-05-05
Semi-Polar III-Nitride Films and Materials and Method for Making the Same App 20140353685 - Soukhoveev; Vitali ; et al.	2014-12-04
Method for substrate pretreatment to achieve high-quality III-nitride epitaxy Grant 8,728,938 - Ivantsov , et al. May 20, 2	2014-05-20
Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE) Grant 8,673,074 - Usikov , et al. March 18, 2	2014-03-18
HVPE apparatus and methods for growth of p-type single crystal group III nitride materials Grant 8,647,435 - Dmitriev , et al. February 11, 2	2014-02-11
Method for Substrate Pretreatment To Achieve High-Quality III-Nitride Epitaxy App 20130337639 - Ivantsov; Vladimir ; et al.	2013-12-19
Bulk GaN and AlGaN single crystals Grant 8,372,199 - Melnik , et al. February 12, 2	2013-02-12
Bulk GaN and AlGaN single crystals Grant 8,092,596 - Melnik , et al. January 10, 2	2012-01-10
HVPE apparatus and methods for growth of indium containing materials and materials and structures grown thereby Grant 7,727,333 - Syrkin , et al. June 1, 2	2010-06-01
Growth of Planar Non-Polar M-Plane and Semi-Polar Gallium Nitride with Hydride Vapor Phase Epitaxy (HVPE) App 20100012948 - Usikov; Alexander ; et al.	2010-01-21
Reactor for extended duration growth of gallium containing single crystals Grant 7,611,586 - Melnik , et al. November 3, 2	2009-11-03
Method for achieving low defect density AlGaN single crystal boules Grant 7,556,688 - Melnik , et al. July 7, 2	2009-07-07
BULK GaN AND AlGaN SINGLE CRYSTALS App 20090148984 - MELNIK; Yuri V. ; et al.	2009-06-11
Method For Achieving Low Defect Density Algan Single Crystal Boules App 20090050913 - MELNIK; Yuri ; et al.	2009-02-26
BULK GaN AND AlGaN SINGLE CRYSTALS App 20080257256 - MELNIK; Yuri V. ; et al.	2008-10-23
Reactor For Extended Duration Growth Of Gallium Containing Single Crystals App 20080022926 - Melnik; Yuri V. ; et al.	2008-01-31
Reactor for extended duration growth of gallium containing single crystals Grant 7,279,047 - Melnik , et al. October 9, 2	2007-10-09
Bulk GaN and AIGaN single crystals App 20050244997 - Melnik, Yuri V. ; et al.	2005-11-03
Method for achieving low defect density AlGaN single crystal boules App 20050212001 - Melnik, Yuri V. ; et al.	2005-09-29
Bulk GaN and ALGaN single crystals Grant 6,936,357 - Melnik , et al. August 30, 2	2005-08-30
Bulk GaN and AlGaN single crystals App 20050164044 - Melnik, Yuri V. ; et al.	2005-07-28
Reactor for extended duration growth of gallium containing single crystals App 20050056222 - Melnik, Yuri V. ; et al.	2005-03-17
Bulk GaN and AlGaN single crystals App 20030226496 - Melnik, Yuri V. ; et al.	2003-12-11
Reactor For Extended Duration Growth Of Gallium Containing Single Crystals App 20030221619 - Melnik, Yuri V. ; et al.	2003-12-04
Reactor for extended duration growth of gallium containing single crystals Grant 6,656,285 - Melnik , et al. December 2, 2	2003-12-02
Method For Achieving Low Defect Density Aigan Single Crystal Boules App 20030205193 - Melnik, Yuri V. ; et al.	2003-11-06
Method for achieving low defect density GaN single crystal boules Grant 6,616,757 - Melnik , et al. September 9, 2	2003-09-09
Method for fabricating bulk GaN single crystals Grant 6,613,143 - Melnik , et al. September 2, 2	2003-09-02
Method for fabricating bulk AlGaN single crystals Grant 6,576,054 - Melnik , et al. June 10, 2	2003-06-10

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