Isomae; Seiichi
Patent Applications and Registrations
Patent applications and USPTO patent grants for Isomae; Seiichi.The latest application filed is for "method and apparatus for producing semiconductor or metal particles".
- Isomae; Seiichi - Hanno JP
- Isomae, Seiichi - Hanno-shi JP
- Isomae; Seiichi - Hannou JP
- Isomae; Seiichi - Sayama JP
- Isomae; Seiichi - Kokubunji JP
| Patent | Date |
|---|---|
| Method and apparatus for producing semiconductor or metal particles Grant 7,189,278 - Kato , et al. March 13, 2 | 2007-03-13 |
| Method and apparatus for producing semiconductor or metal particles App 20040007790 - Kato, Kenji ; et al. | 2004-01-15 |
| Semiconductor device having buried boron and carbon regions, and method of manufacture thereof Grant 6,635,950 - Ishida , et al. October 21, 2 | 2003-10-21 |
| Defect assessing apparatus and method, and semiconductor manufacturing method Grant 6,226,079 - Takeda , et al. May 1, 2 | 2001-05-01 |
| Semiconductor device having buried boron and carbon regions Grant 6,198,157 - Ishida , et al. March 6, 2 | 2001-03-06 |
| Recrystallized CMOS with different crystal planes Grant 4,768,076 - Aoki , et al. August 30, 1 | 1988-08-30 |
| Germanium-containing silicon nitride film Grant 4,126,880 - Tamaki , et al. November 21, 1 | 1978-11-21 |
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