Iso; Kenji

Patent Applications and Registrations

Patent applications and USPTO patent grants for Iso; Kenji.The latest application filed is for "gan substrate wafer and method for manufacturing same".

Company Profile

4.20.28

Iso; Kenji - Tokyo JP
Iso; Kenji - Tsukuba JP
Iso; Kenji - Kanagawa JP
Iso; Kenji - Tsukubamirai Ibaraki JP
Iso; Kenji - Fujisawa JP
Iso; Kenji - Goleta CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method for producing GaN crystal Grant 11,371,140 - Iso , et al. June 28, 2	2022-06-28
Gan Substrate Wafer And Method For Manufacturing Same App 20220084819 - ISO; Kenji ; et al.	2022-03-17
Gan Substrate Wafer And Production Method For Same App 20220084820 - ENATSU; Yuuki ; et al.	2022-03-17
GaN SUBSTRATE WAFER AND METHOD FOR MANUFACTURING GaN SUBSTRATE WAFER App 20220010455 - ISO; Kenji	2022-01-13
METHOD FOR PRODUCING GaN CRYSTAL App 20210172061 - ISO; Kenji ; et al.	2021-06-10
n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRIDE SEMICONDUCTOR DEVICE PRODUCTION METHOD App 20210164127 - ISO; Kenji ; et al.	2021-06-03
Method for producing GaN crystal Grant 10,961,619 - Iso , et al. March 30, 2	2021-03-30
C-plane GaN substrate Grant 10,224,201 - Iso , et al.	2019-03-05
METHOD FOR PRODUCING GaN CRYSTAL App 20190010605 - ISO; Kenji ; et al.	2019-01-10
C-plane GaN substrate Grant 10,177,217 - Iso , et al. J	2019-01-08
C-PLANE GaN SUBSTRATE App 20170352721 - ISO; Kenji ; et al.	2017-12-07
Planar nonpolar group-III nitride films grown on miscut substrates Grant 9,828,695 - Hirai , et al. November 28, 2	2017-11-28
C-PLANE GaN SUBSTRATE App 20170338112 - ISO; Kenji ; et al.	2017-11-23
Planar Nonpolar Group Iii-nitride Films Grown On Miscut Substrates App 20170327969 - Iso; Kenji ; et al.	2017-11-16
Planar Nonpolar Group-iii Nitride Films Grown On Miscut Substrates App 20160230312 - Hirai; Asako ; et al.	2016-08-11
Planar nonpolar group-III nitride films grown on miscut substrates Grant 9,340,899 - Hirai , et al. May 17, 2	2016-05-17
Planar Nonpolar Group-iii Nitride Films Grown On Miscut Substrates App 20140291694 - Hirai; Asako ; et al.	2014-10-02
Planar nonpolar group-III nitride films grown on miscut substrates Grant 8,791,000 - Hirai , et al. July 29, 2	2014-07-29
Planar Nonpolar Group-iii Nitride Films Grown On Miscut Substrates App 20140138679 - Hirai; Asako ; et al.	2014-05-22
Planar nonpolar group-III nitride films grown on miscut substrates Grant 8,691,671 - Hirai , et al. April 8, 2	2014-04-08
Vapor phase epitaxy apparatus of group III nitride semiconductor Grant 8,679,254 - Iso , et al. March 25, 2	2014-03-25
Nonpolar III-nitride light emitting diodes with long wavelength emission Grant 8,642,993 - Yamada , et al. February 4, 2	2014-02-04
Light emitting diodes with a p-type surface bonded to a transparent submount to increase light extraction efficiency Grant 8,368,109 - Iso , et al. February 5, 2	2013-02-05
Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut Grant 8,278,128 - Masui , et al. October 2, 2	2012-10-02
Planar Nonpolar Group-iii Nitride Films Grown On Miscut Substrates App 20120175739 - HIRAI; Asako ; et al.	2012-07-12
Planar nonpolar m-plane group III nitride films grown on miscut substrates Grant 8,158,497 - Hirai , et al. April 17, 2	2012-04-17
Light Emitting Diodes With A P-type Surface Bonded To A Transparent Submount To Increase Light Extraction Efficiency App 20120056158 - Iso; Kenji ; et al.	2012-03-08
Enhancement Of Optical Polarization Of Nitride Light-emitting Diodes By Increased Indium Incorporation App 20120049158 - MASUI; HISASHI ; et al.	2012-03-01
Light emitting diodes with a P-type surface bonded to a transparent submount to increase light extraction efficiency Grant 8,124,991 - Iso , et al. February 28, 2	2012-02-28
Enhancement of optical polarization of nitride light-emitting diodes by increased indium incorporation Grant 8,044,417 - Masui , et al. October 25, 2	2011-10-25
Planar Nonpolar Group Iii-nitride Films Grown On Miscut Substrates App 20110237054 - Iso; Kenji ; et al.	2011-09-29
Vapor Phase Epitaxy Apparatus Of Group Iii Nitride Semiconductor App 20110180001 - ISO; Kenji ; et al.	2011-07-28
Nonpolar Iii-nitride Light Emitting Diodes With Long Wavelength Emission App 20110057166 - Yamada; Hisashi ; et al.	2011-03-10
Vapor Phase Epitaxy Apparatus Of Group Iii Nitride Semiconductor App 20100307418 - ISO; Kenji ; et al.	2010-12-09
Nonpolar III-nitride light emitting diodes with long wavelength emission Grant 7,847,280 - Yamada , et al. December 7, 2	2010-12-07
Vapor Phase Epitaxy Apparatus Of Group Iii Nitride Semiconductor App 20100229794 - ISO; Kenji ; et al.	2010-09-16
Enhancement Of Optical Polarization Of Nitride Light-emitting Diodes By Wafer Off-axis Cut App 20100052008 - Masui; Hisashi ; et al.	2010-03-04
Enhancement Of Optical Polarization Of Nitride Light-emitting Diodes By Increased Indium Incorporation App 20090194761 - Masui; Hisashi ; et al.	2009-08-06
Light Output Enhanced Gallium Nitride Based Thin Light Emitting Diode App 20090141502 - Sonoda; Junichi ; et al.	2009-06-04
Light Emitting Diodes With A P-type Surface Bonded To A Transparent Submount To Increase Light Extraction Efficiency App 20090039367 - Iso; Kenji ; et al.	2009-02-12
Nonpolar Iii-nitride Light Emitting Diodes With Long Wavelength Emission App 20090039339 - Yamada; Hisashi ; et al.	2009-02-12
Planar Nonpolar M-plane Group Iii-nitride Films Grown On Miscut Substrates App 20090039356 - Iso; Kenji ; et al.	2009-02-12
PLANAR NONPOLAR m-PLANE GROUP III NITRIDE FILMS GROWN ON MISCUT SUBSTRATES App 20080308907 - Hirai; Asako ; et al.	2008-12-18

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