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Ishiwatari; Toshio Patent Filings

Ishiwatari; Toshio

Patent Applications and Registrations

Patent applications and USPTO patent grants for Ishiwatari; Toshio.The latest application filed is for "nitride semiconductor material and production process of nitride semiconductor crystal".

Company Profile
0.1.1
  • Ishiwatari; Toshio - Ibaraki JP
  • Ishiwatari; Toshio - Abiko JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Nitride Semiconductor Material And Production Process Of Nitride Semiconductor Crystal
App 20090026488 - Kiyomi; Kazumasa ;   et al.
2009-01-29
Liquid-phase epitaxial growth method of a IIIb-Vb group compound
Grant 4,609,411 - Kohashi , et al. September 2, 1
1986-09-02

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