Ishimura; Youichi
Patent Applications and Registrations
Patent applications and USPTO patent grants for Ishimura; Youichi.The latest application filed is for "insulated gate semiconductor device and method of manufacturing the same".
- Ishimura; Youichi - Tokyo JP
- Ishimura; Youichi - Fukuoka JP
| Patent | Date |
|---|---|
| Insulated gate semiconductor device for realizing low gate capacity and a low short-circuit current Grant 6,781,200 - Ishimura , et al. August 24, 2 | 2004-08-24 |
| Silicon carbide semiconductor switching device Grant 6,696,702 - Satoh , et al. February 24, 2 | 2004-02-24 |
| Insulated gate semiconductor device and method of manufacturing the same App 20030141542 - Ishimura, Youichi ; et al. | 2003-07-31 |
| Semiconductor device App 20020195682 - Satoh, Katsumi ; et al. | 2002-12-26 |
| Field-effect semiconductor device App 20020109183 - Ishimura, Youichi ; et al. | 2002-08-15 |
| Field effect type semiconductor device and manufacturing method thereof Grant 5,729,032 - Tomomatsu , et al. March 17, 1 | 1998-03-17 |
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