loadpatents
Patent applications and USPTO patent grants for Ishikawa; Mizue.The latest application filed is for "magnetic memory device".
Patent | Date |
---|---|
Magnetic memory device Grant 10,734,053 - Ishikawa , et al. | 2020-08-04 |
Magnetic Memory Device App 20200058338 - ISHIKAWA; Mizue ;   et al. | 2020-02-20 |
Magnetic memory Grant 10,490,736 - Saito , et al. Nov | 2019-11-26 |
Magnetic memory device Grant 10,453,513 - Kato , et al. Oc | 2019-10-22 |
Magnetic memory device Grant 10,374,150 - Kato , et al. | 2019-08-06 |
Magnetic memory device Grant 10,360,960 - Kato , et al. | 2019-07-23 |
Magnetic memory including a magnetoresistive device that includes a first magnetic layer having a fixed magnetization and a second magnetic layer having a changeable magnetization Grant 10,283,697 - Inokuchi , et al. | 2019-05-07 |
Magnetic memory Grant 10,262,711 - Ishikawa , et al. | 2019-04-16 |
Magnetic Memory App 20190088860 - Saito; Yoshiaki ;   et al. | 2019-03-21 |
Magnetic Memory Device App 20190080741 - KATO; Yushi ;   et al. | 2019-03-14 |
Magnetic Memory Element And Magnetic Memory Device App 20190051818 - OIKAWA; Soichi ;   et al. | 2019-02-14 |
Magnetic Memory Device App 20180366639 - Kato; Yushi ;   et al. | 2018-12-20 |
Magnetic Memory App 20180268886 - ISHIKAWA; Mizue ;   et al. | 2018-09-20 |
Magnetic Memory Device App 20180174634 - KATO; Yushi ;   et al. | 2018-06-21 |
Magnetic Memory App 20180145247 - SAITO; Yoshiaki ;   et al. | 2018-05-24 |
Magnetic Memory App 20180040807 - SAITO; Yoshiaki ;   et al. | 2018-02-08 |
Spin transistor memory Grant 9,842,635 - Sugiyama , et al. December 12, 2 | 2017-12-12 |
Magnetic Memory App 20170271574 - INOKUCHI; Tomoaki ;   et al. | 2017-09-21 |
Magnetic memory and semiconductor-integrated-circuit Grant 9,570,137 - Sugiyama , et al. February 14, 2 | 2017-02-14 |
Magnetic memory, spin element, and spin MOS transistor Grant 9,536,583 - Inokuchi , et al. January 3, 2 | 2017-01-03 |
Resistive change memory Grant 9,520,171 - Inokuchi , et al. December 13, 2 | 2016-12-13 |
Spin Transistor Memory App 20160276007 - SUGIYAMA; Hideyuki ;   et al. | 2016-09-22 |
Magnetic Memory And Semiconductor-integrated-circuit App 20160196861 - SUGIYAMA; Hideyuki ;   et al. | 2016-07-07 |
Magnetic Memory, Spin Element, And Spin Mos Transistor App 20160078913 - INOKUCHI; Tomoaki ;   et al. | 2016-03-17 |
Magnetic memory, spin element, and spin MOS transistor Grant 9,230,625 - Inokuchi , et al. January 5, 2 | 2016-01-05 |
Resistive Change Memory App 20150357016 - INOKUCHI; Tomoaki ;   et al. | 2015-12-10 |
Spin Mosfet App 20150311305 - ISHIKAWA; Mizue ;   et al. | 2015-10-29 |
Spin transistor and memory Grant 9,112,139 - Inokuchi , et al. August 18, 2 | 2015-08-18 |
Spin MOSFET and reconfigurable logic circuit Grant 9,112,131 - Saito , et al. August 18, 2 | 2015-08-18 |
Stacked structure, spin transistor, and reconfigurable logic circuit Grant 8,981,436 - Saito , et al. March 17, 2 | 2015-03-17 |
Magnetic memory element, magnetic memory device, spin transistor, and integrated circuit Grant 8,958,239 - Inokuchi , et al. February 17, 2 | 2015-02-17 |
Magnetic Memory, Spin Element, And Spin Mos Transistor App 20140301136 - INOKUCHI; Tomoaki ;   et al. | 2014-10-09 |
Spin Fet And Magnetoresistive Element App 20140291744 - SAITO; Yoshiaki ;   et al. | 2014-10-02 |
Spin transistors and memory Grant 8,847,288 - Inokuchi , et al. September 30, 2 | 2014-09-30 |
Stacked Structure, Spin Transistor, And Reconfigurable Logic Circuit App 20140117427 - SAITO; Yoshiaki ;   et al. | 2014-05-01 |
Spin Mosfet And Reconfigurable Logic Circuit App 20140097474 - Saito; Yoshiaki ;   et al. | 2014-04-10 |
Spin MOSFET and reconfigurable logic circuit Grant 8,637,946 - Saito , et al. January 28, 2 | 2014-01-28 |
Spin transistor, integrated circuit, and magnetic memory Grant 8,618,590 - Inokuchi , et al. December 31, 2 | 2013-12-31 |
Spin transistor, integrated circuit, and magnetic memory Grant 08618590 - | 2013-12-31 |
Memory circuit using spin MOSFETs, path transistor circuit with memory function, switching box circuit, switching block circuit, and field programmable gate array Grant 8,611,143 - Sugiyama , et al. December 17, 2 | 2013-12-17 |
Content addressable memory Grant 8,576,601 - Marukame , et al. November 5, 2 | 2013-11-05 |
Spin Transistors And Memory App 20130248941 - Inokuchi; Tomoaki ;   et al. | 2013-09-26 |
Spin MOSFET and reconfigurable logic circuit using the spin MOSFET Grant 8,487,359 - Saito , et al. July 16, 2 | 2013-07-16 |
Spin Transistor And Memory App 20130075843 - Inokuchi; Tomoaki ;   et al. | 2013-03-28 |
Magnetic Memory Element, Magnetic Memory Device, Spin Transistor, And Integrated Circuit App 20130077388 - Inokuchi; Tomoaki ;   et al. | 2013-03-28 |
Pass transistor circuit with memory function, and switching box circuit including the pass transistor circuit Grant 8,405,443 - Sugiyama , et al. March 26, 2 | 2013-03-26 |
Nonvolatile memory circuit using spin MOS transistors Grant 8,385,114 - Sugiyama , et al. February 26, 2 | 2013-02-26 |
Look-up table circuits and field programmable gate array Grant 8,373,437 - Sugiyama , et al. February 12, 2 | 2013-02-12 |
Spin transistor and method of manufacturing the same Grant 8,357,962 - Marukame , et al. January 22, 2 | 2013-01-22 |
Tunneling magnetoresistive effect element and spin MOS field-effect Grant 8,335,059 - Ishikawa , et al. December 18, 2 | 2012-12-18 |
Semiconductor device and method of manufacturing the same Grant 8,330,196 - Marukame , et al. December 11, 2 | 2012-12-11 |
Tunneling Magnetoresistive Effect Element And Spin Mos Field-effect App 20120273856 - ISHIKAWA; Mizue ;   et al. | 2012-11-01 |
Memory Circuit Using Spin Mosfets, Path Transistor Circuit With Memory Function, Switching Box Circuit, Switching Block Circuit, And Field Programmable Gate Array App 20120250399 - SUGIYAMA; Hideyuki ;   et al. | 2012-10-04 |
Pass Transistor Circuit With Memory Function, And Switching Box Circuit Including The Pass Transistor Circuit App 20120223762 - Sugiyama; Hideyuki ;   et al. | 2012-09-06 |
Content Addressable Memory App 20120218802 - MARUKAME; Takao ;   et al. | 2012-08-30 |
Tunneling magnetoresistive effect element and spin MOS field-effect transistor Grant 8,243,400 - Ishikawa , et al. August 14, 2 | 2012-08-14 |
Semiconductor Device And Method Of Manufacturing The Same App 20120168838 - MARUKAME; Takao ;   et al. | 2012-07-05 |
Nonvolatile Memory Circuit Using Spin Mos Transistors App 20120119274 - Sugiyama; Hideyuki ;   et al. | 2012-05-17 |
Nonvolatile memory circuit using spin MOS transistors Grant 8,154,916 - Sugiyama , et al. April 10, 2 | 2012-04-10 |
Look-up Table Circuits And Field Programmable Gate Array App 20120074984 - SUGIYAMA; Hideyuki ;   et al. | 2012-03-29 |
Spin memory and spin transistor Grant 8,139,403 - Inokuchi , et al. March 20, 2 | 2012-03-20 |
Semiconductor integrated circuit Grant 8,111,087 - Inokuchi , et al. February 7, 2 | 2012-02-07 |
Spin Mosfet And Reconfigurable Logic Circuit App 20120019283 - SAITO; Yoshiaki ;   et al. | 2012-01-26 |
Spin MOSFET and reconfigurable logic circuit Grant 8,026,561 - Saito , et al. September 27, 2 | 2011-09-27 |
Spin Memory And Spin Transistor App 20110228596 - Inokuchi; Tomoaki ;   et al. | 2011-09-22 |
Nonvolatile Memory Circuit Using Spin Mos Transistors App 20110194342 - SUGIYAMA; Hideyuki ;   et al. | 2011-08-11 |
Stack having Heusler alloy, magnetoresistive element and spin transistor using the stack, and method of manufacturing the same Grant 7,973,351 - Marukame , et al. July 5, 2 | 2011-07-05 |
Spin transistor and magnetic memory Grant 7,956,395 - Inokuchi , et al. June 7, 2 | 2011-06-07 |
Spin MOS field effect transistor and tunneling magnetoresistive effect element using stack having Heusler alloy Grant 7,943,974 - Ishikawa , et al. May 17, 2 | 2011-05-17 |
Spin Mosfet And Reconfigurable Logic Circuit App 20100244897 - Saito; Yoshiaki ;   et al. | 2010-09-30 |
Reconfigurable logic circuit Grant 7,796,423 - Sugiyama , et al. September 14, 2 | 2010-09-14 |
Spin Transistor And Method Of Manufacturing The Same App 20100200899 - MARUKAME; Takao ;   et al. | 2010-08-12 |
Spin MOS field effect transistor and tunneling magnetoresistive effect element using stack having Heusler alloy App 20100187585 - Ishikawa; Mizue ;   et al. | 2010-07-29 |
Spin MOS field effect transistor and tunneling magnetoresistive effect element using stack having Heusler alloy Grant 7,709,867 - Ishikawa , et al. May 4, 2 | 2010-05-04 |
Spin Transistor, Integrated Circuit, And Magnetic Memory App 20100072528 - INOKUCHI; Tomoaki ;   et al. | 2010-03-25 |
Stack Having Heusler Alloy, Magnetoresistive Element And Spin Transistor Using The Stack, And Method Of Manufacturing The Same App 20100072529 - MARUKAME; Takao ;   et al. | 2010-03-25 |
Spin Mosfet And Reconfigurable Logic Circuit Using The Spin Mosfet App 20100019798 - Saito; Yoshiaki ;   et al. | 2010-01-28 |
Semiconductor Integrated Circuit App 20090243653 - INOKUCHI; Tomoaki ;   et al. | 2009-10-01 |
Reconfigurable Logic Circuit App 20090179667 - SUGIYAMA; Hideyuki ;   et al. | 2009-07-16 |
Tunneling Magnetoresistive Effect Element And Spin Mos Field-effect Transistor App 20090180215 - ISHIKAWA; Mizue ;   et al. | 2009-07-16 |
Spin Fet And Magnetoresistive Element App 20090057654 - SAITO; Yoshiaki ;   et al. | 2009-03-05 |
Spin Transistor And Magnetic Memory App 20090059659 - INOKUCHI; Tomoaki ;   et al. | 2009-03-05 |
Spin Mos Field Effect Transistor And Tunneling Magnetoresistive Effect Element Using Stack Having Heusler Alloy App 20090050948 - ISHIKAWA; Mizue ;   et al. | 2009-02-26 |
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