Ishikawa; Masaoki
Patent Applications and Registrations
Patent applications and USPTO patent grants for Ishikawa; Masaoki.The latest application filed is for "dual-gate schottky barrier gate fet having an intermediate electrode and a method of making same".
- Ishikawa; Masaoki - Tokyo JA
| Patent | Date |
|---|---|
| Dual-gate Schottky barrier gate fet having an intermediate electrode and a method of making same Grant 4,048,646 - Ogawa , et al. September 13, 1 | 1977-09-13 |
| Method of manufacturing a semiconductor device having closely spaced electrodes by perpendicular projection Grant 3,994,758 - Ogawa , et al. November 30, 1 | 1976-11-30 |
| Gallium-arsenide Schottky Barrier Type Semiconductor Device Grant 3,699,408 - Shinoda , et al. October 17, 1 | 1972-10-17 |
| Mos Device With A Metal-silicide Gate Grant 3,617,824 - Shinoda , et al. November 2, 1 | 1971-11-02 |
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