| Patent | Date |
|---|
Epitaxial film forming method, sputtering apparatus, manufacturing method of semiconductor light-emitting element, semiconductor light-emitting element, and illumination device
Grant 10,844,470 - Daigo , et al. November 24, 2 | 2020-11-24 |
Group Iii Nitride Composite Substrate And Method For Manufacturing The Same, And Method For Manufacturing Group Iii Nitride Semi
App 20200176305 - ISHIBASHI; Keiji ; et al. | 2020-06-04 |
Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
Grant 10,600,676 - Ishibashi , et al. | 2020-03-24 |
Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
Grant 10,186,451 - Hachigo , et al. Ja | 2019-01-22 |
Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same
Grant 10,113,248 - Ishibashi , et al. October 30, 2 | 2018-10-30 |
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
Grant 10,078,059 - Ishibashi , et al. September 18, 2 | 2018-09-18 |
Group Iii Nitride Composite Substrate And Method For Manufacturing The Same, And Method For Manufacturing Group Iii Nitride Semiconductor Device
App 20180166325 - ISHIBASHI; Keiji ; et al. | 2018-06-14 |
Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same
Grant 9,923,063 - Ishibashi , et al. March 20, 2 | 2018-03-20 |
Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
Grant 9,917,004 - Ishibashi , et al. March 13, 2 | 2018-03-13 |
Epitaxial Film Forming Method, Sputtering Apparatus, Manufacturing Method Of Semiconductor Light-emitting Element, Semiconductor Light-emitting Element, And Illumination Device
App 20170309480 - Daigo; Yoshiaki ; et al. | 2017-10-26 |
Group Iii Nitride Crystal Substrate, Epilayer-containing Group Iii Nitride Crystal Substrate, Semiconductor Device And Method Of Manufacturing The Same
App 20170283988 - ISHIBASHI; Keiji ; et al. | 2017-10-05 |
Silicon carbide substrate, semiconductor device and methods for manufacturing them
Grant 9,728,612 - Ishibashi August 8, 2 | 2017-08-08 |
Silicon carbide substrate, semiconductor device, and methods for manufacturing them
Grant 9,722,028 - Ishibashi August 1, 2 | 2017-08-01 |
Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same
Grant 9,708,735 - Ishibashi , et al. July 18, 2 | 2017-07-18 |
Nitride Crystal, Nitride Crystal Substrate, Epilayer-containing Nitride Crystal Substrate, Semiconductor Device And Method Of Manufacturing The Same
App 20170115239 - ISHIBASHI; Keiji ; et al. | 2017-04-27 |
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
Grant 9,570,540 - Ishibashi , et al. February 14, 2 | 2017-02-14 |
Silicon Carbide Substrate, Semiconductor Device And Methods For Manufacturing Them
App 20160359007 - Ishibashi; Keiji | 2016-12-08 |
Silicon Carbide Substrate, Semiconductor Device, And Methods For Manufacturing Them
App 20160343808 - ISHIBASHI; Keiji | 2016-11-24 |
Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same
Grant 9,499,925 - Ishibashi , et al. November 22, 2 | 2016-11-22 |
Substrate, semiconductor device, and method of manufacturing the same
Grant 9,490,132 - Ishibashi November 8, 2 | 2016-11-08 |
Silicon carbide substrate, semiconductor device and methods for manufacturing them
Grant 9,484,416 - Ishibashi November 1, 2 | 2016-11-01 |
Silicon carbide substrate, semiconductor device, and methods for manufacturing them
Grant 9,437,690 - Ishibashi September 6, 2 | 2016-09-06 |
Group Iii Nitride Composite Substrate And Method For Manufacturing The Same, And Method For Manufacturing Group Iii Nitride Semiconductor Device
App 20160190001 - HACHIGO; Akihiro ; et al. | 2016-06-30 |
Silicon carbide single-crystal substrate
Grant 9,324,814 - Okita , et al. April 26, 2 | 2016-04-26 |
Silicon carbide single-crystal substrate
Grant 9,318,563 - Okita , et al. April 19, 2 | 2016-04-19 |
Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
Grant 9,312,165 - Hachigo , et al. April 12, 2 | 2016-04-12 |
Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same
Grant 9,312,340 - Kiyama , et al. April 12, 2 | 2016-04-12 |
III nitride semiconductor substrate, epitaxial substrate, and semiconductor device
Grant 9,299,890 - Ishibashi March 29, 2 | 2016-03-29 |
Epitaxial film forming method, vacuum processing apparatus, semiconductor light emitting element manufacturing method, semiconductor light emitting element, and illuminating device
Grant 9,252,322 - Daigo , et al. February 2, 2 | 2016-02-02 |
Silicon Carbide Substrate, Semiconductor Device, And Methods For Manufacturing Them
App 20160020281 - ISHIBASHI; Keiji | 2016-01-21 |
Group Iii Nitride Composite Substrate And Method For Manufacturing The Same, Laminated Group Iii Nitride Composite Substrate, And Group Iii Nitride Semiconductor Device And Method For Manufacturing The Same
App 20150380496 - ISHIBASHI; Keiji ; et al. | 2015-12-31 |
Group Iii Nitride Composite Substrate And Method For Manufacturing The Same, Laminated Group Iii Nitride Composite Substrate, And Group Iii Nitride Semiconductor Device And Method For Manufacturing The Same
App 20150349063 - KIYAMA; Makoto ; et al. | 2015-12-03 |
Substrate, Semiconductor Device, And Method Of Manufacturing The Same
App 20150325637 - ISHIBASHI; Keiji | 2015-11-12 |
Silicon carbide substrate, semiconductor device, and methods for manufacturing them
Grant 9,184,246 - Ishibashi November 10, 2 | 2015-11-10 |
Silicon Carbide Substrate, Semiconductor Device And Methods For Manufacturing Them
App 20150295050 - Ishibashi; Keiji | 2015-10-15 |
Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same
Grant 9,136,337 - Ishibashi , et al. September 15, 2 | 2015-09-15 |
Substrate, semiconductor device, and method of manufacturing the same
Grant 9,117,758 - Ishibashi August 25, 2 | 2015-08-25 |
Silicon carbide substrate, semiconductor device, and methods for manufacturing them
Grant 9,105,756 - Ishibashi August 11, 2 | 2015-08-11 |
Silicon Carbide Single-crystal Substrate
App 20150221729 - Okita; Kyoko ; et al. | 2015-08-06 |
Substrate, semiconductor device, and method of manufacturing the same
Grant 9,093,384 - Ishibashi July 28, 2 | 2015-07-28 |
Group Iii Nitride Composite Substrate And Method For Manufacturing The Same, And Method For Manufacturing Group Iii Nitride Semiconductor Device
App 20150194442 - Ishibashi; Keiji ; et al. | 2015-07-09 |
III nitride semiconductor substrate, epitaxial substrate, and semiconductor device
Grant 9,070,828 - Ishibashi June 30, 2 | 2015-06-30 |
Silicon Carbide Single-crystal Substrate
App 20150162409 - Okita; Kyoko ; et al. | 2015-06-11 |
Iii Nitride Semiconductor Substrate, Epitaxial Substrate, And Semiconductor Device
App 20150137319 - ISHIBASHI; Keiji | 2015-05-21 |
Group III nitride crystal substrate
Grant 9,035,429 - Nishiura , et al. May 19, 2 | 2015-05-19 |
Silicon carbide single-crystal substrate and method for manufacturing same
Grant 8,975,643 - Okita , et al. March 10, 2 | 2015-03-10 |
Group III nitride semiconductor substrate having a sulfide in a surface layer
Grant 8,952,494 - Ishibashi February 10, 2 | 2015-02-10 |
Substrate, Semiconductor Device, And Method Of Manufacturing The Same
App 20150008453 - ISHIBASHI; Keiji | 2015-01-08 |
Substrate, Semiconductor Device, And Method Of Manufacturing The Same
App 20150008454 - ISHIBASHI; Keiji | 2015-01-08 |
Iii Nitride Semiconductor Substrate, Epitaxial Substrate, And Semiconductor Device
App 20140367735 - Ishibashi; Keiji | 2014-12-18 |
SrRuO3 FILM DEPOSITION METHOD
App 20140360863 - DAIGO; Yoshiaki ; et al. | 2014-12-11 |
Nitride Crystal, Nitride Crystal Substrate, Epilayer-containing Nitride Crystal Substrate, Semiconductor Device And Method Of Manufacturing The Same
App 20140349112 - ISHIBASHI; Keiji ; et al. | 2014-11-27 |
Substrate, semiconductor device, and method of manufacturing the same
Grant 8,872,189 - Ishibashi October 28, 2 | 2014-10-28 |
Group III nitride substrate, semiconductor device comprising the same, and method for producing surface-treated group III nitride substrate
Grant 8,871,647 - Ishibashi October 28, 2 | 2014-10-28 |
III nitride semiconductor substrate, epitaxial substrate, and semiconductor device
Grant 8,853,670 - Ishibashi October 7, 2 | 2014-10-07 |
Group Iii Nitride Crystal Substrate, Epilayer-containing Group Iii Nitride Crystal Substrate, Semiconductor Device And Method Of Manufacturing The Same
App 20140291811 - ISHIBASHI; Keiji ; et al. | 2014-10-02 |
Polishing agent, compound semiconductor manufacturing method, and semiconductor device manufacturing method
Grant 8,841,215 - Ishibashi , et al. September 23, 2 | 2014-09-23 |
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
Grant 8,828,140 - Ishibashi , et al. September 9, 2 | 2014-09-09 |
Group Iii Nitride Composite Substrate And Method For Manufacturing The Same, And Method For Manufacturing Group Iii Nitride Semiconductor Device
App 20140225229 - HACHIGO; Akihiro ; et al. | 2014-08-14 |
Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same
Grant 8,771,552 - Ishibashi , et al. July 8, 2 | 2014-07-08 |
Method Of Surface Treatment Of Group Iii Nitride Crystal Film, Group Iii Nitride Crystal Substrate, Group Iii Nitride Crystal Substrate With Epitaxial Layer, And Semiconductor Device
App 20140124826 - Ishibashi; Keiji ; et al. | 2014-05-08 |
Group Iii Nitride Composite Substrate And Method For Manufacturing The Same, Laminated Group Iii Nitride Composite Substrate, And Group Iii Nitride Semiconductor Device And Method For Manufacturing The Same
App 20140103353 - ISHIBASHI; Keiji ; et al. | 2014-04-17 |
Silicon Carbide Single-crystal Substrate And Method For Manufacturing Same
App 20140073228 - OKITA; Kyoko ; et al. | 2014-03-13 |
Silicon carbide substrate manufacturing method and silicon carbide substrate
Grant 8,586,998 - Inoue , et al. November 19, 2 | 2013-11-19 |
Nitride Crystal, Nitride Crystal Substrate, Epilayer-containing Nitride Crystal Substrate, Semiconductor Device And Method Of Manufacturing The Same
App 20130292802 - ISHIBASHI; Keiji ; et al. | 2013-11-07 |
Epitaxial Film Forming Method, Sputtering Apparatus, Manufacturing Method Of Semiconductor Light-emitting Element, Semiconductor Light-emitting Element, And Illumination Device
App 20130277206 - DAIGO; Yoshiaki ; et al. | 2013-10-24 |
Silicon Carbide Single-crystal Substrate And Method For Manufacturing Same
App 20130264584 - OKITA; Kyoko ; et al. | 2013-10-10 |
Silicon Carbide Substrate, Semiconductor Device, And Methods For Manufacturing Them
App 20130256700 - ISHIBASHI; Keiji | 2013-10-03 |
Group Iii Nitride Substrate, Semiconductor Device Comprising The Same, And Method For Producing Surface-treated Group Iii Nitride Substrate
App 20130249060 - ISHIBASHI; Keiji | 2013-09-26 |
Group III nitride substrate, semiconductor device comprising the same, and method for producing surface-treated group III nitride substrate
Grant 8,471,364 - Ishibashi June 25, 2 | 2013-06-25 |
Silicon Carbide Substrate, Semiconductor Device, And Methods For Manufacturing Them
App 20130119406 - NOTSU; Hiroshi ; et al. | 2013-05-16 |
Silicon Carbide Substrate, Silicon Carbide Semiconductor Device, Method For Manufacturing Silicon Carbide Substrate, And Method For Manufacturing Silicon Carbide Semiconductor Device
App 20130092956 - ISHIBASHI; Keiji ; et al. | 2013-04-18 |
Method Of Processing A Surface Of Group Iii Nitride Crystal And Group Iii Nitride Crystal Substrate
App 20130075867 - NISHIURA; Takayuki ; et al. | 2013-03-28 |
Epitaxial Film Forming Method, Vacuum Processing Apparatus, Semiconductor Light Emitting Element Manufacturing Method, Semiconductor Light Emitting Element, And Illuminating Device
App 20130049064 - DAIGO; Yoshiaki ; et al. | 2013-02-28 |
Substrate, Semiconductor Device, And Method Of Manufacturing The Same
App 20130032822 - ISHIBASHI; Keiji | 2013-02-07 |
Silicon Carbide Substrate Manufacturing Method And Silicon Carbide Substrate
App 20130026497 - INOUE; Hiroki ; et al. | 2013-01-31 |
Silicon Carbide Substrate, Semiconductor Device, And Methods For Manufacturing Them
App 20130020585 - ISHIBASHI; Keiji | 2013-01-24 |
Method of processing a surface of group III nitride crystal and group III nitride crystal substrate
Grant 8,338,299 - Nishiura , et al. December 25, 2 | 2012-12-25 |
Silicon Carbide Substrate And Method Of Manufacturing The Same
App 20120319125 - HORI; Tsutomu ; et al. | 2012-12-20 |
Group Iii Nitride Crystal Substrate, Epilayer-containing Group Iii Nitride Crystal Substrate, Semiconductor Device And Method Of Manufacturing The Same
App 20120267606 - ISHIBASHI; Keiji ; et al. | 2012-10-25 |
GaN substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device
Grant 8,283,694 - Ishibashi , et al. October 9, 2 | 2012-10-09 |
Group Iii Nitride Crystal Substrate, Epilayer-containing Group Iii Nitride Crystal Substrate, Semiconductor Device And Method Of Manufacturing The Same
App 20120223417 - Ishibashi; Keiji ; et al. | 2012-09-06 |
Compound semiconductor substrate, semiconductor device, and processes for producing them
Grant 8,242,498 - Ishibashi , et al. August 14, 2 | 2012-08-14 |
Gallium nitride-based semiconductor optical device, method of fabricating gallium nitride-based semiconductor optical device, and epitaxial wafer
Grant 8,228,963 - Enya , et al. July 24, 2 | 2012-07-24 |
Method Of Processing Of Nitride Semiconductor Wafer, Nitride Semiconductor Wafer, Method Of Producing Nitride Semiconductor Device And Nitride Semiconductor Device
App 20120184108 - Ishibashi; Keiji ; et al. | 2012-07-19 |
Polishing Agent, Compound Semiconductor Manufacturing Method, and Semiconductor Device Manufacturing Method
App 20120164833 - Ishibashi; Keiji ; et al. | 2012-06-28 |
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
Grant 8,192,543 - Ishibashi , et al. June 5, 2 | 2012-06-05 |
Nitride semiconductor wafer having a chamfered edge
Grant 8,183,669 - Ishibashi , et al. May 22, 2 | 2012-05-22 |
Iii Nitride Semiconductor Substrate, Epitaxial Substrate, And Semiconductor Device
App 20120104558 - ISHIBASHI; Keiji | 2012-05-03 |
Damage Evaluation Method Of Compound Semiconductor Member, Production Method Of Compound Semiconductor Member, Gallium Nitride Compound Semiconductor Member, And Gallium Nitride Compound Semiconductor Membrane
App 20120100643 - Hachigo; Akihiro ; et al. | 2012-04-26 |
Group Iii Nitride Substrate, Epitaxial Layer-provided Substrate, Methods Of Manufacturing The Same, And Method Of Manufacturing Semiconductor Device
App 20120094473 - ISHIBASHI; Keiji ; et al. | 2012-04-19 |
Iii Nitride Semiconductor Substrate, Epitaxial Substrate, And Semiconductor Device
App 20120068155 - ISHIBASHI; Keiji | 2012-03-22 |
Method Of Processing Of Nitride Semiconductor Wafer, Nitride Semiconductor Wafer, Method Of Producing Nitride Semiconductor Device And Nitride Semiconductor Device
App 20120043645 - ISHIBASHI; Keiji ; et al. | 2012-02-23 |
Production method of compound semiconductor member
Grant 8,115,927 - Hachigo , et al. February 14, 2 | 2012-02-14 |
Group Iii Nitride Substrate, Semiconductor Device Comprising The Same, And Method For Producing Surface-treated Group Iii Nitride Substrate
App 20120018736 - ISHIBASHI; Keiji | 2012-01-26 |
Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device
Grant 8,101,968 - Ishibashi , et al. January 24, 2 | 2012-01-24 |
Method of processing of nitride semiconductor wafer, nitride semiconductor wafer, method of producing nitride semiconductor device and nitride semiconductor device
Grant 8,101,523 - Ishibashi , et al. January 24, 2 | 2012-01-24 |
Group Iii Nitride Substrate, Semiconductor Device Comprising The Same, And Method For Producing Surface-treated Group Iii Nitride Substrate
App 20110306209 - ISHIBASHI; Keiji | 2011-12-15 |
Group III nitride substrate, semiconductor device comprising the same, and method for producing surface-treated group III nitride substrate
Grant 8,030,681 - Ishibashi October 4, 2 | 2011-10-04 |
Vacuum processing apparatus
Grant 7,981,216 - Ishibashi , et al. July 19, 2 | 2011-07-19 |
Nitride semiconductor light emitting device and method for forming the same
Grant 7,973,322 - Akita , et al. July 5, 2 | 2011-07-05 |
Group Iii Nitride Crystal And Method For Surface Treatment Thereof, Group Iii Nitride Stack And Manufacturing Method Thereof, And Group Iii Nitride Semiconductor Device And Manufacturing Method Thereof
App 20110146565 - ISHIBASHI; Keiji ; et al. | 2011-06-23 |
Group Iii Nitride Substrate, Epitaxial Layer-provided Substrate, Methods Of Manufacturing The Same, And Method Of Manufacturing Semiconductor Device
App 20110133207 - Ishibashi; Keiji ; et al. | 2011-06-09 |
GaN SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, METHODS OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
App 20110133209 - ISHIBASHI; Keiji ; et al. | 2011-06-09 |
Compound Semiconductor Substrate, Semiconductor Device, and Processes for Producing Them
App 20110084363 - ISHIBASHI; Keiji ; et al. | 2011-04-14 |
Group III nitride crystal and method for surface treatment thereof, group III nitride stack and manufacturing method thereof, and group III nitride semiconductor device and manufacturing method thereof
Grant 7,919,343 - Ishibashi , et al. April 5, 2 | 2011-04-05 |
Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device
Grant 7,901,960 - Ishibashi , et al. March 8, 2 | 2011-03-08 |
Method Of Processing Of Nitride Semiconductor Wafer, Nitride Semiconductor Wafer, Method Of Producing Nitride Semiconductor Device And Nitride Semiconductor Device
App 20110049679 - ISHIBASHI; Keiji ; et al. | 2011-03-03 |
Group Iii Nitride Substrate, Semiconductor Device Comprising The Same, And Method For Producing Surface-treated Group Iii Nitride Substrate
App 20110031589 - Ishibashi; Keiji | 2011-02-10 |
Diamond film coated tool and process for producing the same
Grant 7,883,775 - Kazahaya , et al. February 8, 2 | 2011-02-08 |
Group Iii Nitride Crystal Substrate, Epilayer-containing Group Iii Nitride Crystal Substrate, Semiconductor Device And Method Of Manufacturing The Same
App 20110012233 - ISHIBASHI; Keiji ; et al. | 2011-01-20 |
Nitride semiconductor wafer
Grant 7,872,331 - Ishibashi , et al. January 18, 2 | 2011-01-18 |
Compound semiconductor substrate, semiconductor device, and processes for producing them
Grant 7,863,609 - Ishibashi , et al. January 4, 2 | 2011-01-04 |
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
Grant 7,854,804 - Ishibashi , et al. December 21, 2 | 2010-12-21 |
Surface treatment method for nitride crystal, nitride crystal substrate, nitride crystal substrate with epitaxial layer and semiconductor device, and method of manufacturing nitride crystal substrate with epitaxial layer and semiconductor device
Grant 7,851,381 - Ishibashi , et al. December 14, 2 | 2010-12-14 |
Method of measuring warpage of rear surface of substrate
Grant 7,846,810 - Ishibashi , et al. December 7, 2 | 2010-12-07 |
Nitride Semiconductor Wafer
App 20100270649 - Ishibashi; Keiji ; et al. | 2010-10-28 |
GaN substrate, substrate with epitaxial layer, semiconductor device, and method of manufacturing GaN substrate
Grant 7,816,238 - Osada , et al. October 19, 2 | 2010-10-19 |
Method Of Processing A Surface Of Group Iii Nitride Crystal And Group Iii Nitride Crystal Substrate
App 20100248478 - NISHIURA; Takayuki ; et al. | 2010-09-30 |
Method Of Surface Treatment Of Group Iii Nitride Crystal Film, Group Iii Nitride Crystal Substrate, Group Iii Nitride Crystal Substrate With Epitaxial Layer, And Semiconductor Device
App 20100227532 - Ishibashi; Keiji ; et al. | 2010-09-09 |
Compound Semiconductor Substrate, Semiconductor Device, And Processes For Producing Them
App 20100224963 - Ishibashi; Keiji ; et al. | 2010-09-09 |
Gallium Nitride-based Semiconductor Optical Device, Method Of Fabricating Gallium Nitride-based Semiconductor Optical Device, And Epitaxial Wafer
App 20100220761 - ENYA; Yohei ; et al. | 2010-09-02 |
Hydrogen atom generation source in vacuum treatment apparatus, and hydrogen atom transportation method
Grant 7,771,701 - Umemoto , et al. August 10, 2 | 2010-08-10 |
Group Iii Nitride Substrate, Epitaxial Layer-provided Substrate, Methods Of Manufacturing The Same, And Method Of Manufacturing Semiconductor Device
App 20100187540 - Ishibashi; Keiji ; et al. | 2010-07-29 |
Vacuum Treatment Apparatus
App 20100126669 - Kumagai; Akira ; et al. | 2010-05-27 |
Nitride Crystal, Nitride Crystal Substrate, Epilayer-containing Nitride Crystal Substrate, Semiconductor Device And Method Of Manufacturing The Same
App 20100123168 - ISHIBASHI; Keiji ; et al. | 2010-05-20 |
Damage Evaluation Method Of Compound Semiconductor Member, Production Method Of Compound Semiconductor Member, Gallium Nitride Compound Semiconductor Member, And Gallium Nitride Compound Semiconductor Membrane
App 20100068834 - Hachigo; Akihiro ; et al. | 2010-03-18 |
Nitride Semiconductor Light Emitting Device And Method For Forming The Same
App 20100059759 - Akita; Katsushi ; et al. | 2010-03-11 |
Vacuum Processing Apparatus
App 20100037822 - ISHIBASHI; Keiji ; et al. | 2010-02-18 |
Method of producing group 3 nitride substrate wafers and group 3 nitride substrate wafers
Grant 7,662,239 - Ishibashi , et al. February 16, 2 | 2010-02-16 |
Nitride Semiconductor Light-Emitting Device and Nitride Semiconductor Light-Emitting Device Fabrication Method
App 20100032644 - Akita; Katsushi ; et al. | 2010-02-11 |
Polishing Slurry, Method For Manufacturing The Polishing Slurry, Nitride Crystalline Material And Method For Plishing Surface Of The Nitride Crystalline Material
App 20090317638 - Kawabata; Kazuhiro ; et al. | 2009-12-24 |
Group Iii Nitride Crystal And Method For Surface Treatment Thereof, Group Iii Nitride Stack And Manufacturing Method Thereof, And Group Iii Nitride Semiconductor Device And Manufacturing Method Thereof
App 20090273060 - ISHIBASHI; Keiji ; et al. | 2009-11-05 |
Polishing Slurry, Method Of Treating Surface Of Gaxin1-xasyp1-y Crystal And Gaxin1-xasyp1-y Crystal Substrate
App 20090159845 - ISHIBASHI; Keiji ; et al. | 2009-06-25 |
Film-forming system and film-forming method
App 20090126629 - Kumagai; Akira ; et al. | 2009-05-21 |
Method Of Measuring Warpage Of Rear Surface Of Substrate
App 20090112512 - ISHIBASHI; Keiji ; et al. | 2009-04-30 |
Target Structure And Target Holding Apparatus
App 20090078564 - Ishibashi; Keiji ; et al. | 2009-03-26 |
Polishing slurry, method of treating surface of Ga.sub.xIn.sub.1-xAs.sub.yP.sub.1-y crystal and Ga.sub.xIn.sub.1-xAs.sub.yP.sub.1-y crystal substrate
Grant 7,507,668 - Ishibashi , et al. March 24, 2 | 2009-03-24 |
Method of measuring warpage of rear surface of substrate
Grant 7,494,892 - Ishibashi , et al. February 24, 2 | 2009-02-24 |
Hydrogen Atom Generation Source in Vacuum Treatment Apparatus, and Hydrogen Atom Transportation Method
App 20090004100 - Umemoto; Hironobu ; et al. | 2009-01-01 |
GaN SUBSTRATE, SUBSTRATE WITH EPITAXIAL LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING GaN SUBSTRATE
App 20080308906 - OSADA; Hideki ; et al. | 2008-12-18 |
GaN Substrate, Substrate with an Epitaxial Layer, Semiconductor Device, and GaN Substrate Manufacturing Method
App 20080308815 - Kasai; Hitoshi ; et al. | 2008-12-18 |
ALxGayIn1-x-yN substrate, cleaning method of AIxGayIn1-x-yN substrate, AIN substrate, and cleaning method of AIN substrate
App 20080299375 - Uemura; Tomoki ; et al. | 2008-12-04 |
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
App 20080271667 - Ishibashi; Keiji ; et al. | 2008-11-06 |
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
App 20080272392 - Ishibashi; Keiji ; et al. | 2008-11-06 |
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
Grant 7,416,604 - Ishibashi , et al. August 26, 2 | 2008-08-26 |
Al.sub.xGa.sub.yIn.sub.l-x-yN substrate, cleaning method of Al.sub.xGa.sub.yIn.sub.l-x-yN substrate, AlN substrate, and cleaning method of AlN substrate
Grant 7,387,989 - Uemura , et al. June 17, 2 | 2008-06-17 |
Manufacturing method of group III nitride substrate, group III nitride substrate, group III nitride substrate with epitaxial layer, manufacturing method of group III nitride substrate with epitaxial layer, and manufacturing method of group III nitride device
App 20080057608 - Ishibashi; Keiji ; et al. | 2008-03-06 |
Method of producing group 3 nitride substrate wafers and group 3 nitride substrate wafers
App 20080014756 - Ishibashi; Keiji ; et al. | 2008-01-17 |
Surface treatment method for nitride crystal, nitride crystal substrate, nitride crystal substrate with epitaxial layer and semiconductor device, and method of manufacturing nitride crystal substrate with epitaxial layer and semiconductor device
App 20070281484 - Ishibashi; Keiji ; et al. | 2007-12-06 |
Method of processing a surface of group III nitride crystal and group III nitride crystal substrate
App 20070254401 - Nishiura; Takayuki ; et al. | 2007-11-01 |
Method of measuring warpage of rear surface of substrate
App 20070192058 - Ishibashi; Keiji ; et al. | 2007-08-16 |
Sputtering method and sputtering device
App 20070114122 - Ishibashi; Keiji ; et al. | 2007-05-24 |
Heating element CVD system and connection structure between heating element and electric power supply mechanism in the heating element CVD system
Grant 7,211,152 - Ishibashi , et al. May 1, 2 | 2007-05-01 |
Polishing slurry, method of treating surface of GaxIn1-xASyP1-y crystal and GaxIn1-xASyP1-y crystal substrate
App 20070075041 - Ishibashi; Keiji ; et al. | 2007-04-05 |
Method of working nitride semiconductor crystal
App 20060292832 - Ishibashi; Keiji ; et al. | 2006-12-28 |
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
App 20060292728 - Ishibashi; Keiji ; et al. | 2006-12-28 |
Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member, and gallium nitride compound semiconductor membrane
App 20060281201 - Hachigo; Akihiro ; et al. | 2006-12-14 |
Heating element CVD system and heating element CVD metod using the same
App 20060254516 - Karasawa; Minoru ; et al. | 2006-11-16 |
Method of surface treatment of group III nitride crystal film, group III nitride crystal substrate, group III nitride crystal substrate with epitaxial layer, and semiconductor device
App 20060236922 - Ishibashi; Keiji ; et al. | 2006-10-26 |
Diamond film coated tool and process for producing the same
App 20060216515 - Kazahaya; Katsuo ; et al. | 2006-09-28 |
Film-forming system and film-forming method
App 20060127600 - Kumagai; Akira ; et al. | 2006-06-15 |
Mehtod for processing nitride semiconductor crystal surface and nitride semiconductor crystal obtained by such method
App 20060012011 - Nakahata; Seiji ; et al. | 2006-01-19 |
AlxGayIn1-x-yN substrate, cleaning method of AlxGayIn1-x-yN substrate, AIN substrate, and cleaning method of AIN substrate
App 20060003134 - Uemura; Tomoki ; et al. | 2006-01-05 |
Silicon oxide film formation method
Grant 6,955,836 - Kumagai , et al. October 18, 2 | 2005-10-18 |
Vacuum Processing Apparatus
App 20050217576 - Ishibashi, Keiji ; et al. | 2005-10-06 |
Hot element CVD apparatus and a method for removing a deposited film
Grant 6,942,892 - Ishibashi September 13, 2 | 2005-09-13 |
Heating element CVD system and connection structure between heating element and electric power supply mechanism in the heating element CVD system
App 20040065260 - Ishibashi, Keiji ; et al. | 2004-04-08 |
Film-forming system and film-forming method
App 20040050328 - Kumagai, Akira ; et al. | 2004-03-18 |
Diamond substrate for surface acoustic wave device, and surface acoustic wave device
Grant 6,661,152 - Ishibashi , et al. December 9, 2 | 2003-12-09 |
Diamond substrate for surface acoustic wave device, and surface acoustic wave device
App 20030137217 - Ishibashi, Keiji ; et al. | 2003-07-24 |
Heating element CVD system and heating element CVD method using the same
App 20030131795 - Karasawa, Minoru ; et al. | 2003-07-17 |
Heating element CVD system
Grant 6,593,548 - Matsumura , et al. July 15, 2 | 2003-07-15 |
Silicon oxide film formation method
App 20030118748 - Kumagai, Akira ; et al. | 2003-06-26 |
Heating element cvd system
App 20020189545 - Matsumura, Hideki ; et al. | 2002-12-19 |
Method for removing a deposited film
Grant 6,375,756 - Ishibashi April 23, 2 | 2002-04-23 |
Combined RF-DC magnetron sputtering method
Grant 6,365,009 - Ishibashi April 2, 2 | 2002-04-02 |
Fused pyridazine compounds
Grant 6,218,392 - Watanabe , et al. April 17, 2 | 2001-04-17 |
Fused pyridazine compounds
Grant 5,849,741 - Watanabe , et al. December 15, 1 | 1998-12-15 |
Anthranilic acid derivatives
Grant 5,716,993 - Ozaki , et al. February 10, 1 | 1998-02-10 |
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