| Patent | Date |
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Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer
Grant 8,723,219 - Nakayama , et al. May 13, 2 | 2014-05-13 |
Chamfered Freestanding Nitride Semiconductor Wafer And Method Of Chamfering Nitride Semiconductor Wafer
App 20130292696 - NAKAYAMA; MASAHIRO ; et al. | 2013-11-07 |
Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer
Grant 8,482,032 - Nakayama , et al. July 9, 2 | 2013-07-09 |
GaN substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device
Grant 8,283,694 - Ishibashi , et al. October 9, 2 | 2012-10-09 |
Group Iii Nitride Substrate, Epitaxial Layer-provided Substrate, Methods Of Manufacturing The Same, And Method Of Manufacturing Semiconductor Device
App 20120094473 - ISHIBASHI; Keiji ; et al. | 2012-04-19 |
Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device
Grant 8,101,968 - Ishibashi , et al. January 24, 2 | 2012-01-24 |
Chamfered Freestanding Nitride Semiconductor Wafer And Method Of Chamfering Nitride Semiconductor Wafer
App 20110297959 - NAKAYAMA; Masahiro ; et al. | 2011-12-08 |
Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer
Grant 8,022,438 - Nakayama , et al. September 20, 2 | 2011-09-20 |
Group Iii Nitride Crystal And Method For Surface Treatment Thereof, Group Iii Nitride Stack And Manufacturing Method Thereof, And Group Iii Nitride Semiconductor Device And Manufacturing Method Thereof
App 20110146565 - ISHIBASHI; Keiji ; et al. | 2011-06-23 |
GaN SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, METHODS OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
App 20110133209 - ISHIBASHI; Keiji ; et al. | 2011-06-09 |
Group Iii Nitride Substrate, Epitaxial Layer-provided Substrate, Methods Of Manufacturing The Same, And Method Of Manufacturing Semiconductor Device
App 20110133207 - Ishibashi; Keiji ; et al. | 2011-06-09 |
Group III nitride crystal and method for surface treatment thereof, group III nitride stack and manufacturing method thereof, and group III nitride semiconductor device and manufacturing method thereof
Grant 7,919,343 - Ishibashi , et al. April 5, 2 | 2011-04-05 |
Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device
Grant 7,901,960 - Ishibashi , et al. March 8, 2 | 2011-03-08 |
Surface treatment method for nitride crystal, nitride crystal substrate, nitride crystal substrate with epitaxial layer and semiconductor device, and method of manufacturing nitride crystal substrate with epitaxial layer and semiconductor device
Grant 7,851,381 - Ishibashi , et al. December 14, 2 | 2010-12-14 |
Group Iii Nitride Substrate, Epitaxial Layer-provided Substrate, Methods Of Manufacturing The Same, And Method Of Manufacturing Semiconductor Device
App 20100187540 - Ishibashi; Keiji ; et al. | 2010-07-29 |
Method of producing group 3 nitride substrate wafers and group 3 nitride substrate wafers
Grant 7,662,239 - Ishibashi , et al. February 16, 2 | 2010-02-16 |
Semiconductor Wafer and Semiconductor Wafer Inspection Method
App 20100013058 - Shibata; Kaoru ; et al. | 2010-01-21 |
Group Iii Nitride Crystal And Method For Surface Treatment Thereof, Group Iii Nitride Stack And Manufacturing Method Thereof, And Group Iii Nitride Semiconductor Device And Manufacturing Method Thereof
App 20090273060 - ISHIBASHI; Keiji ; et al. | 2009-11-05 |
Chamfered Freestanding Nitride Semiconductor Wafer And Method Of Chamfering Nitride Semiconductor Wafer
App 20090218659 - NAKAYAMA; Masahiro ; et al. | 2009-09-03 |
Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer
Grant 7,550,780 - Nakayama , et al. June 23, 2 | 2009-06-23 |
GaN Substrate Manufacturing Method, GaN Substrate, and Semiconductor Device
App 20090127564 - Irikura; Masato ; et al. | 2009-05-21 |
Nitride semiconductor substrate and method of producing same
Grant 7,390,747 - Irikura , et al. June 24, 2 | 2008-06-24 |
Manufacturing method of group III nitride substrate, group III nitride substrate, group III nitride substrate with epitaxial layer, manufacturing method of group III nitride substrate with epitaxial layer, and manufacturing method of group III nitride device
App 20080057608 - Ishibashi; Keiji ; et al. | 2008-03-06 |
Method of producing group 3 nitride substrate wafers and group 3 nitride substrate wafers
App 20080014756 - Ishibashi; Keiji ; et al. | 2008-01-17 |
Surface treatment method for nitride crystal, nitride crystal substrate, nitride crystal substrate with epitaxial layer and semiconductor device, and method of manufacturing nitride crystal substrate with epitaxial layer and semiconductor device
App 20070281484 - Ishibashi; Keiji ; et al. | 2007-12-06 |
Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer
Grant 7,195,545 - Nakayama , et al. March 27, 2 | 2007-03-27 |
Nitride semiconductor substrate and method of producing same
Grant 7,154,131 - Irikura , et al. December 26, 2 | 2006-12-26 |
Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer
App 20060194520 - Nakayama; Masahiro ; et al. | 2006-08-31 |
Nitride semiconductor substrate and method of producing same
App 20060071234 - Irikura; Masato ; et al. | 2006-04-06 |
Nitride semiconductor substrate and method of producing same
App 20050073027 - Irikura, Masato ; et al. | 2005-04-07 |
Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer
App 20040195658 - Nakayama, Masahiro ; et al. | 2004-10-07 |
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