Intelligent Sources Development Corp.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Intelligent Sources Development Corp..The latest application filed is for "vertical dram cell structure and its contactless dram arrays".

Company Profile

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Intelligent Sources Development Corp. - Hsinchu TW
INTELLIGENT SOURCES DEVELOPMENT CORP. -

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Stack-gate flash memory cell structure and its contactless flash memory arrays Grant 6,765,258 - Wu July 20, 2	2004-07-20
Stacked-gate cell structure and its NAND-type flash memory array Grant 6,756,631 - Wu June 29, 2	2004-06-29
Self-aligned trench-type dram structure and its contactless dram arrays Grant 6,750,499 - Wu June 15, 2	2004-06-15
Stack-type DRAM memory structure and its manufacturing method Grant 6,746,915 - Wu June 8, 2	2004-06-08
Scaled MOSFET device and its fabricating method Grant 6,747,328 - Wu June 8, 2	2004-06-08
Self-aligned lateral-transistor DRAM cell structure Grant 6,744,089 - Wu June 1, 2	2004-06-01
Method of forming a nanometer-gate MOSFET device Grant 6,713,393 - Wu March 30, 2	2004-03-30
Scalable stack-type DRAM memory structure and its manufacturing methods Grant 6,710,398 - Wu March 23, 2	2004-03-23
Self-aligned Lateral-transistor Dram Cell Structure App 20040046199 - Wu, Ching-Yuan	2004-03-11
Vertical Dram Cell Structure And Its Contactless Dram Arrays App 20040046200 - Wu, Ching-Yuan	2004-03-11
Self-aligned vertical transistor DRAM structure Grant 6,700,150 - Wu March 2, 2	2004-03-02
Self-aligned Vertical Transistor Dram Structure And Its Manufacturing Methods App 20040036519 - Wu, Ching-Yuan	2004-02-26
Vertical Transistor Dram Structure And Its Manufacturing Methods App 20040036101 - Wu, Ching-Yuan	2004-02-26
Self-aligned trench-type dram strucutre and its manufacturing methods App 20040029342 - Wu, Ching-Yuan	2004-02-12
Scalable Stack-type Dram Memory Structure And Its Manufacturing Methods App 20040016957 - Wu, Ching-Yuan	2004-01-29
Scaled mosfet device and its fabricating method App 20040004259 - Wu, Ching-Yuan	2004-01-08
Method of forming a nanometer-gate mosfet device App 20030235990 - Wu, Ching-Yuan	2003-12-25
Scalable vertical DRAM cell structure and its manufacturing methods Grant 6,552,382 - Wu April 22, 2	2003-04-22

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