loadpatents
name:-0.0028839111328125
name:-0.017179012298584
name:-0.00038790702819824
Institute of Materials Research and Engineering Patent Filings

Institute of Materials Research and Engineering

Patent Applications and Registrations

Patent applications and USPTO patent grants for Institute of Materials Research and Engineering.The latest application filed is for "process for modifying chip assembly substrates".

Company Profile
0.15.1
  • Institute of Materials Research and Engineering - Singapore SG
  • Institute of Materials Research and Engineering - SG SG
  • Institute of Materials Research & Engineering -
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Organic electronic devices with an encapsulation
Grant 8,344,360 - Auch , et al. January 1, 2
2013-01-01
Encapsulation of electronic devices
Grant 7,394,153 - Auch , et al. July 1, 2
2008-07-01
Biodegradable triblock copolymers, synthesis methods therefore, and hydrogels and biomaterials made there from
Grant 7,297,348 - Li , et al. November 20, 2
2007-11-20
Laminates for encapsulating devices
Grant 7,262,441 - Guenther , et al. August 28, 2
2007-08-28
Encapsulation for oled devices
Grant 7,255,823 - Guenther , et al. August 14, 2
2007-08-14
Patterning of electrodes in OLED devices
Grant 7,221,093 - Auch , et al. May 22, 2
2007-05-22
Encapsulation of electronic devices
Grant 7,166,007 - Auch , et al. January 23, 2
2007-01-23
Transparent electrode material for quality enhancement of OLED devices
Grant 7,098,591 - Zhu , et al. August 29, 2
2006-08-29
Laminates for encapsulating devices
Grant 6,949,825 - Guenther , et al. September 27, 2
2005-09-27
Sealing for OLED devices
Grant 6,933,537 - Yee , et al. August 23, 2
2005-08-23
Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
Grant 6,861,271 - Chua , et al. March 1, 2
2005-03-01
GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same
Grant 6,841,274 - Ueno , et al. January 11, 2
2005-01-11
Procedure for encapsulation of electronic devices
Grant 6,803,245 - Auch , et al. October 12, 2
2004-10-12
Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
Grant 6,645,885 - Chua , et al. November 11, 2
2003-11-11
Process for modifying chip assembly substrates
App 20020102745 - Lahiri, Syamal Kumar ;   et al.
2002-08-01
Portable high resolution scanning electron microscope column using permanent magnet electron lenses
Grant 6,057,553 - Khursheed , et al. May 2, 2
2000-05-02

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