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name:-0.013431072235107
name:-0.0034539699554443
Inoue; Kengo Patent Filings

Inoue; Kengo

Patent Applications and Registrations

Patent applications and USPTO patent grants for Inoue; Kengo.The latest application filed is for "method for determining presence or absence of risk of developing cancer".

Company Profile
3.12.17
  • Inoue; Kengo - Aichi-ken JP
  • INOUE; Kengo - Shizuoka JP
  • Inoue; Kengo - Tokyo JP
  • Inoue; Kengo - Mie JP
  • Inoue; Kengo - Kawasaki JP
  • Inoue; Kengo - Yokohama JP
  • Inoue; Kengo - Kanagawa JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
System of optimizing activation degree of occupant of vehicle
Grant 10,814,886 - Sakata , et al. October 27, 2
2020-10-27
Method For Determining Presence Or Absence Of Risk Of Developing Cancer
App 20200255901 - YAMAGUCHI; Ken ;   et al.
2020-08-13
Co-expression plasmid
Grant 10,563,208 - Koseki , et al. Feb
2020-02-18
System Of Optimizing Activation Degree Of Occupant Of Vehicle
App 20190344805 - SAKATA; Masaru ;   et al.
2019-11-14
Coexpression Plasmid
App 20170260534 - KOSEKI; Koichi ;   et al.
2017-09-14
Semiconductor Device Manufacturing Method And Semiconductor Device
App 20160240543 - Torii; Satoshi ;   et al.
2016-08-18
Semiconductor device manufacturing method and semiconductor device
Grant 9,349,600 - Torii , et al. May 24, 2
2016-05-24
Therapeutic Agent for Type 2 Diabetes
App 20160060235 - Tomizawa; Kazuhito ;   et al.
2016-03-03
Semiconductor Device Manufacturing Method And Semiconductor Device
App 20150137211 - TORII; Satoshi ;   et al.
2015-05-21
Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
Grant 8,778,814 - Owada , et al. July 15, 2
2014-07-15
Silicon Oxycarbide, Growth Method Of Silicon Oxycarbide Layer, Semiconductor Device And Manufacture Method For Semiconductor Device
App 20130330912 - Owada; Tamotsu ;   et al.
2013-12-12
Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
Grant 8,349,722 - Owada , et al. January 8, 2
2013-01-08
Numerical structure-analysis calculation system
Grant 8,352,219 - Takahashi , et al. January 8, 2
2013-01-08
Silicon Oxycarbide, Growth Method Of Silicon Oxycarbide Layer, Semiconductor Device And Manufacture Method For Semiconductor Device
App 20120252227 - Owada; Tamotsu ;   et al.
2012-10-04
Numerical Structure-analysis Calculation System
App 20100100361 - Takasashi; Kunihiro ;   et al.
2010-04-22
Semiconductor device with shallow trench isolation and its manufacture method
Grant 7,626,234 - Inoue , et al. December 1, 2
2009-12-01
Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
App 20090093130 - Owada; Tamotsu ;   et al.
2009-04-09
Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
Grant 7,485,570 - Owada , et al. February 3, 2
2009-02-03
Semiconductor device with shallow trench isolation and its manufacture method
Grant 7,211,480 - Inoue , et al. May 1, 2
2007-05-01
Method for fabricating a semiconductor device
Grant 7,183,200 - Inoue February 27, 2
2007-02-27
Semiconductor device with shallow trench isolation and its manufacture method
App 20060255426 - Inoue; Kengo ;   et al.
2006-11-16
Method for forming SiC-based film and method for fabricating semiconductor device
App 20060205193 - Sugimoto; Ken ;   et al.
2006-09-14
Manufacture of semiconductor device having STI and semiconductor device manufactured
Grant 7,037,803 - Inoue , et al. May 2, 2
2006-05-02
Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
App 20050287790 - Owada, Tamotsu ;   et al.
2005-12-29
Method for fabricating a semiconductor device
App 20050227476 - Inoue, Kengo
2005-10-13
Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
Grant 6,949,830 - Owada , et al. September 27, 2
2005-09-27
Semiconductor device with shallow trench isolation and its manufacture method
App 20050194646 - Inoue, Kengo ;   et al.
2005-09-08
Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
App 20040155340 - Owada, Tamotsu ;   et al.
2004-08-12
Manufacture of semiconductor device having STI and semiconductor device manufactured
App 20040115897 - Inoue, Kengo ;   et al.
2004-06-17

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