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Patent applications and USPTO patent grants for Imaizumi; Ichiro.The latest application filed is for "correlation circuit for spread spectrum".
Patent | Date |
---|---|
Rach receiving apparatus Grant 6,928,103 - Imaizumi , et al. August 9, 2 | 2005-08-09 |
Correlation circuit for spread spectrum communication Grant 6,891,885 - Imaizumi May 10, 2 | 2005-05-10 |
Synchronous circuit and receiver Grant 6,707,844 - Imaizumi , et al. March 16, 2 | 2004-03-16 |
Correlation circuit for spread spectrum communication Grant 6,678,313 - Imaizumi , et al. January 13, 2 | 2004-01-13 |
Correlation circuit for spread spectrum communication, demodulation circuit and reception apparatus Grant 6,647,056 - Imaizumi , et al. November 11, 2 | 2003-11-11 |
Despreading circuit Grant 6,636,557 - Imaizumi , et al. October 21, 2 | 2003-10-21 |
Correlation circuit for spread spectrum App 20020141489 - Imaizumi, Ichiro | 2002-10-03 |
Despreading circuit App 20020051484 - Imaizumi, Ichiro ;   et al. | 2002-05-02 |
Rach receiving apparatus App 20020048316 - Imaizumi, Ichiro ;   et al. | 2002-04-25 |
Flip-flop circuit Grant 5,281,865 - Yamashita , et al. January 25, 1 | 1994-01-25 |
High-breakdown-voltage resistance element for integrated circuit with a plurality of multilayer, overlapping electrodes Grant 4,423,433 - Imaizumi , et al. December 27, 1 | 1983-12-27 |
Method for making semiconductor device Grant 4,362,599 - Imaizumi , et al. December 7, 1 | 1982-12-07 |
Junction isolated IC with thick EPI portion having sides at least 20 degrees from (110) orientations Grant 4,278,987 - Imaizumi , et al. July 14, 1 | 1981-07-14 |
Starting device for discharge lamp Grant 3,904,921 - Imaizumi , et al. September 9, 1 | 1975-09-09 |
Method Of Fabricating Semiconductor Device Using At Least Two Sorts Of Insulating Films Different From Each Other Grant 3,850,708 - Imaizumi , et al. November 26, 1 | 1974-11-26 |
Double Epitaxial Method For Fabricating Complementary Integrated Circuit Grant 3,767,486 - Imaizumi October 23, 1 | 1973-10-23 |
Semiconductor Device Having Resistors Constituted By An Epitaxial Layer Grant 3,761,786 - Imaizumi , et al. September 25, 1 | 1973-09-25 |
Current Switch Circuit Grant 3,758,791 - Taniguchi , et al. September 11, 1 | 1973-09-11 |
Semiconductor Memory Grant 3,745,540 - Taniguchi , et al. July 10, 1 | 1973-07-10 |
Semiconductor Device With Two Mos Transistors Of Non-symmetrical Type Grant 3,719,864 - Taniguchi , et al. March 6, 1 | 1973-03-06 |
Threshold Voltage Compensating Circuits For Fets Grant 3,657,575 - Taniguchi , et al. April 18, 1 | 1972-04-18 |
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