| Patent | Date |
|---|
Method Of Manufacturing Semiconductor Device
App 20220199463 - YAMAGUCHI; Shimpei ; et al. | 2022-06-23 |
Method and structure for low density silicon oxide for fusion bonding and debonding
Grant 11,315,789 - Imai , et al. April 26, 2 | 2022-04-26 |
Method And Structure for Low Density Silicon Oxide for Fusion Bonding and Debonding
App 20200343092 - Imai; Kiyotaka ; et al. | 2020-10-29 |
Cable
Grant 10,644,441 - Imai , et al. | 2020-05-05 |
Communication device, communication system and communication method
Grant 10,536,401 - Imai Ja | 2020-01-14 |
Charging connector
Grant 10,340,643 - Imai , et al. | 2019-07-02 |
Charging Connector
App 20180366889 - IMAI; Kiyotaka ; et al. | 2018-12-20 |
Cable
App 20180351291 - IMAI; Kiyotaka ; et al. | 2018-12-06 |
Sacrificial non-epitaxial gate stressors
Grant 9,893,187 - Kittl , et al. February 13, 2 | 2018-02-13 |
Sacrificial Non-epitaxial Gate Stressors
App 20170345932 - Kittl; Jorge A. ; et al. | 2017-11-30 |
Connector for use with a socket
Grant 9,812,816 - Imai , et al. November 7, 2 | 2017-11-07 |
Communication Device, Communication System And Communication Method
App 20170237603 - IMAI; Kiyotaka | 2017-08-17 |
Connector
App 20170033504 - IMAI; Kiyotaka ; et al. | 2017-02-02 |
Semiconductor device and method for fabricating the same
Grant 9,153,664 - Imai , et al. October 6, 2 | 2015-10-06 |
Semiconductor Device And Method For Fabricating The Same
App 20150118817 - IMAI; Kiyotaka ; et al. | 2015-04-30 |
Semiconductor device and method for manufacturing the same in which variations are reduced and characteristics are improved
Grant 8,389,350 - Sakakidani , et al. March 5, 2 | 2013-03-05 |
Semiconductor Device And Method For Manufacturing The Same In Which Variations Are Reduced And Characteristics Are Improved
App 20120007194 - SAKAKIDANI; Akihito ; et al. | 2012-01-12 |
Semiconductor Device
App 20100224914 - IWAMOTO; Toshiyuki ; et al. | 2010-09-09 |
Semiconductor device having high dielectric constant layers of different thicknesses
Grant 7,759,744 - Kimizuka , et al. July 20, 2 | 2010-07-20 |
Semiconductor device
Grant 7,754,570 - Kimizuka , et al. July 13, 2 | 2010-07-13 |
Semiconductor Device And Method Of Manufacturing Semiconductor Device
App 20100117156 - TSUTSUI; Gen ; et al. | 2010-05-13 |
Semiconductor Device And Method Of Manufacturing The Same
App 20080093699 - ABE; Tomohisa ; et al. | 2008-04-24 |
Semiconductor device
Grant 7,238,996 - Kimizuka , et al. July 3, 2 | 2007-07-03 |
Semiconductor device and method for manufacturing same
Grant 7,157,322 - Imai January 2, 2 | 2007-01-02 |
Semiconductor device and manufacturing method thereof
App 20060252264 - Kimizuka; Naohiko ; et al. | 2006-11-09 |
MOS transistor
Grant 7,102,183 - Kimizuka , et al. September 5, 2 | 2006-09-05 |
CMOS semiconductor device
App 20060145265 - Masuoka; Yuri ; et al. | 2006-07-06 |
Semiconductor device
App 20060043497 - Kimizuka; Naohiko ; et al. | 2006-03-02 |
Semiconductor device
App 20050263802 - Kimizuka, Naohiko ; et al. | 2005-12-01 |
Semiconductor device
App 20050253181 - Kimizuka, Naohiko ; et al. | 2005-11-17 |
MOS transistor
App 20050224857 - Kimizuka, Naohiko ; et al. | 2005-10-13 |
Semiconductor device and method of manufacturing the same
Grant 6,756,676 - Oda , et al. June 29, 2 | 2004-06-29 |
Integrated circuit device with switching between active mode and standby mode controlled by digital circuit
Grant 6,664,148 - Goto , et al. December 16, 2 | 2003-12-16 |
Semiconductor device and method for manufacturing the same
App 20030227059 - Miyake, Shinichi ; et al. | 2003-12-11 |
Semiconductor device covering transistor and resistance with capacitor material
App 20030183880 - Goto, Yoshiro ; et al. | 2003-10-02 |
Semiconductor device and method for fabricating the same
Grant 6,627,490 - Masuoka , et al. September 30, 2 | 2003-09-30 |
Semiconductor Memory Device And Method Of Forming The Same
App 20030032250 - IMAI, KIYOTAKA | 2003-02-13 |
Semiconductor device and method for fabricating the same
App 20030001175 - Masuoka, Sadaaki ; et al. | 2003-01-02 |
Integrated circuit device with switching between active mode and standby mode controlled by digital circuit
App 20020105041 - Goto, Yoshiro ; et al. | 2002-08-08 |
Semiconductor device and method for manufacturing same
App 20020042177 - Imai, Kiyotaka | 2002-04-11 |
Method of manufacturing semiconductor device
App 20020017640 - Masuoka, Sadaaki ; et al. | 2002-02-14 |
SOI-MOS field effect transistor with improved source/drain structure and method of forming the same
Grant 6,344,675 - Imai February 5, 2 | 2002-02-05 |
Semiconductor device and method of manufacturing the same
App 20020011675 - Oda, Noriaki ; et al. | 2002-01-31 |
Method of manufacturing semiconductor device
Grant 6,342,413 - Masuoka , et al. January 29, 2 | 2002-01-29 |
Semiconductor device with multilayered gate structure
Grant 6,297,529 - Imai October 2, 2 | 2001-10-02 |
Semiconductor device and fabrication method
App 20010005030 - Imai, Kiyotaka | 2001-06-28 |
Semiconductor device having partially and fully depleted SOI elements on a common substrate
Grant 6,222,234 - Imai April 24, 2 | 2001-04-24 |
SOI-MOS field effect transistor with improved source/drain structure
Grant 6,160,291 - Imai December 12, 2 | 2000-12-12 |
Sub-quarter micron silicon-on-insulator MOS field effect transistor with deep silicide contact layers
Grant 6,160,293 - Onishi , et al. December 12, 2 | 2000-12-12 |
Semiconductor device and manufacturing method of the same
Grant 5,872,039 - Imai February 16, 1 | 1999-02-16 |
Semiconductor device having spiral wiring directly covered with an insulating layer containing ferromagnetic particles
Grant 5,834,825 - Imai November 10, 1 | 1998-11-10 |
Method of manufacturing bipolar transistor having emitter region and external base region formed in self alignment manner
Grant 5,648,279 - Imai July 15, 1 | 1997-07-15 |
Method of manufacturing a bipolar transistor operating at low temperature
Grant 5,569,611 - Imai October 29, 1 | 1996-10-29 |
Heterojunction bipolar transistor with silicon-germanium base
Grant 5,506,427 - Imai April 9, 1 | 1996-04-09 |
Process of producing heterojunction bipolar transistor with silicon-germanium base
Grant 5,494,836 - Imai February 27, 1 | 1996-02-27 |
Method for fabricating a bipolar transistor with reduced base resistance
Grant 5,424,228 - Imai June 13, 1 | 1995-06-13 |
Bi-cmos integrated circuit device having buried region use in common for bipolar and mos transistors
Grant 5,376,816 - Nishigoori , et al. December 27, 1 | 1994-12-27 |
Temperature data producing apparatus for high temperature moving objects
Grant 4,643,587 - Makabe , et al. February 17, 1 | 1987-02-17 |
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