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Semiconductor device Grant 10,847,610 - Ikuta , et al. November 24, 2 | 2020-11-24 |
Semiconductor device Grant 10,756,172 - Ikuta , et al. A | 2020-08-25 |
Semiconductor Device App 20190355809 - IKUTA; Teruhisa ;   et al. | 2019-11-21 |
Semiconductor Device App 20190172908 - IKUTA; Teruhisa ;   et al. | 2019-06-06 |
Semiconductor device Grant 9,324,861 - Ikuta , et al. April 26, 2 | 2016-04-26 |
Semiconductor Device App 20150162440 - IKUTA; Teruhisa ;   et al. | 2015-06-11 |
ESD protective element and plasma display including the ESD protective element Grant 8,823,106 - Ikuta , et al. September 2, 2 | 2014-09-02 |
Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof Grant 8,304,858 - Ikuta , et al. November 6, 2 | 2012-11-06 |
Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof Grant 8,093,131 - Ikuta , et al. January 10, 2 | 2012-01-10 |
Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof App 20110169046 - Ikuta; Teruhisa ;   et al. | 2011-07-14 |
Esd Protective Element, Semiconductor Device, And Plasma Display App 20110169092 - IKUTA; Teruhisa ;   et al. | 2011-07-14 |
High breakdown voltage semiconductor device and fabrication method of the same Grant 7,973,361 - Sato , et al. July 5, 2 | 2011-07-05 |
Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof Grant 7,944,022 - Ikuta , et al. May 17, 2 | 2011-05-17 |
Lateral Insulated Gate Bipolar Transistor Having A Retrograde Doping Profile In Base Region And Method Of Manufacture Thereof App 20110081751 - IKUTA; Teruhisa ;   et al. | 2011-04-07 |
Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof App 20100213509 - Ikuta; Teruhisa ;   et al. | 2010-08-26 |
Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof Grant 7,719,086 - Ikuta , et al. May 18, 2 | 2010-05-18 |
Semiconductor device Grant 7,485,972 - Ikuta , et al. February 3, 2 | 2009-02-03 |
Semiconductor device and method for manufacturing the same Grant 7,408,234 - Ichijo , et al. August 5, 2 | 2008-08-05 |
Lateral Insulated Gate Bipolar Transistor Having A Retrograde Doping Profile In Base Region And Method Of Manufacture Thereof App 20080135972 - Ikuta; Teruhisa ;   et al. | 2008-06-12 |
Semiconductor device Grant 7,342,283 - Ichijo , et al. March 11, 2 | 2008-03-11 |
Lateral semiconductor device Grant 7,323,747 - Ikuta , et al. January 29, 2 | 2008-01-29 |
Lateral semiconductor device and method for producing the same Grant 7,238,987 - Ikuta , et al. July 3, 2 | 2007-07-03 |
Lateral semiconductor device App 20070075393 - Ikuta; Teruhisa ;   et al. | 2007-04-05 |
Semiconductor device and method of fabricating the same Grant 7,157,772 - Ogura , et al. January 2, 2 | 2007-01-02 |
Semiconductor device App 20060255406 - Ichijo; Hisao ;   et al. | 2006-11-16 |
High breakdown voltage semiconductor device and fabrication method of the same App 20060220130 - Sato; Yoshinobu ;   et al. | 2006-10-05 |
Semiconductor device App 20060202240 - Ikuta; Teruhisa ;   et al. | 2006-09-14 |
Lateral semiconductor device and method for producing the same App 20060118902 - Ikuta; Teruhisa ;   et al. | 2006-06-08 |
Semiconductor device and method of fabricating the same App 20060017105 - Ogura; Hiroyoshi ;   et al. | 2006-01-26 |
High-voltage semiconductor device including a floating block Grant 6,989,566 - Noda , et al. January 24, 2 | 2006-01-24 |
Semiconductor device and method for manufacturing the same App 20060001122 - Ichijo; Hisao ;   et al. | 2006-01-05 |
High-voltage semiconductor device Grant 6,750,506 - Noda , et al. June 15, 2 | 2004-06-15 |
High-voltage semiconductor device App 20020179974 - Noda, Masaaki ;   et al. | 2002-12-05 |
High-voltage semiconductor device App 20010004124 - Noda, Masaaki ;   et al. | 2001-06-21 |