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name:-0.0097000598907471
name:-0.0081231594085693
name:-0.0090930461883545
Ikhtiar; Patent Filings

Ikhtiar;

Patent Applications and Registrations

Patent applications and USPTO patent grants for Ikhtiar;.The latest application filed is for "insertion layers for perpendicularly magnetized heusler layers with reduced magnetic damping".

Company Profile
9.6.8
  • Ikhtiar; - San Jose CA
  • Ikhtiar; - Tsukuba JP
  • Ikhtiar; - Ibaraki JP
  • ; ; Ikhtiar - Tsukuba JP
  • Ikhtiar; - Milpitas CA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Insertion Layers For Perpendicularly Magnetized Heusler Layers With Reduced Magnetic Damping
App 20220223783 - Jeong; Jaewoo ;   et al.
2022-07-14
Dipole-coupled Spin-orbit Torque Structure
App 20220068538 - Apalkov; Dmytro ;   et al.
2022-03-03
Oxide interlayers containing glass-forming agents
Grant 11,251,366 - Ikhtiar , et al. February 15, 2
2022-02-15
Magnetic tunnel junction, spintronics device using same, and method for manufacturing magnetic tunnel junction
Grant 11,107,976 - Sukegawa , et al. August 31, 2
2021-08-31
Oxide Interlayers Containing Glass-forming Agents
App 20210159402 - Ikhtiar; ;   et al.
2021-05-27
Hybrid oxide/metal cap layer for boron-free free layer
Grant 11,009,570 - Ikhtiar , et al. May 18, 2
2021-05-18
Magneto-resistance element in which I-III-VI2 compound semiconductor is used, method for manufacturing said magneto-resistance element, and magnetic storage device and spin transistor in which said magneto-resistance element is used
Grant 11,004,465 - Kasai , et al. May 11, 2
2021-05-11
Hybrid Oxide/metal Cap Layer For Boron-free Free Layer
App 20200158796 - Ikhtiar; ;   et al.
2020-05-21
Magnetic Tunnel Junction, Spintronics Device Using Same, And Method For Manufacturing Magnetic Tunnel Junction
App 20200044144 - SUKEGAWA; Hiroaki ;   et al.
2020-02-06
Method and system for providing magnetic junctions utilizing metal oxide layer(s)
Grant 10,553,642 - Lee , et al. Fe
2020-02-04
Magneto-resistance Element In Which I-iii-vi2 Compound Semiconductor Is Used, Method For Manufacturing Said Magneto-resistance E
App 20190237099 - KASAI; Shinya ;   et al.
2019-08-01
Method And System For Providing A Boron-free Magnetic Layer In Perpendicular Magnetic Junctions
App 20190157547 - Ikhtiar; ;   et al.
2019-05-23
Method and system for providing a boron-free magnetic layer in perpendicular magnetic junctions
Grant 10,283,701 - Ikhtiar , et al.
2019-05-07
Method And System For Providing Magnetic Junctions Utilizing Metal Oxide Layer(s)
App 20190067366 - Lee; Don Koun ;   et al.
2019-02-28

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