loadpatents
Patent applications and USPTO patent grants for Ikeda; Takahide.The latest application filed is for "semiconductor device and process of producing the same".
Patent | Date |
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Semiconductor device and process of producing the same Grant 7,238,582 - Shimamoto , et al. July 3, 2 | 2007-07-03 |
Semiconductor device and process of producing the same App 20050101097 - Shimamoto, Hiromi ;   et al. | 2005-05-12 |
Semiconductor memory device Grant 6,864,559 - Nakazato , et al. March 8, 2 | 2005-03-08 |
Semiconductor device and process of producing the same Grant 6,835,632 - Shimamoto , et al. December 28, 2 | 2004-12-28 |
Semiconductor memory device Grant 6,740,958 - Nakazato , et al. May 25, 2 | 2004-05-25 |
Semiconductor device Grant 6,727,152 - Mitani , et al. April 27, 2 | 2004-04-27 |
Semiconductor device and process of producing the same App 20030207544 - Shimamoto, Hiromi ;   et al. | 2003-11-06 |
Semiconductor memory device App 20030178699 - Nakazato, Shinji ;   et al. | 2003-09-25 |
Semiconductor device and process of producing the same Grant 6,610,569 - Shimamoto , et al. August 26, 2 | 2003-08-26 |
Semiconductor memory device App 20020153591 - Nakazato, Shinji ;   et al. | 2002-10-24 |
Semiconductor device App 20020096718 - Mitani, Shinichiro ;   et al. | 2002-07-25 |
Semiconductor memory device Grant 6,208,010 - Nakazato , et al. March 27, 2 | 2001-03-27 |
Method of manufacturing an improved SOI (silicon-on-insulator) semiconductor integrated circuit device Grant 6,063,686 - Masuda , et al. May 16, 2 | 2000-05-16 |
Semiconductor device having conducting structure Grant 5,793,097 - Shimamoto , et al. August 11, 1 | 1998-08-11 |
Semiconductor integrated circuit device including an improved separating groove arrangement Grant 5,661,329 - Hiramoto , et al. August 26, 1 | 1997-08-26 |
Process for producing a bipolar device Grant 5,643,805 - Ohta , et al. July 1, 1 | 1997-07-01 |
Bipolar device and production thereof Grant 5,619,069 - Ohta , et al. April 8, 1 | 1997-04-08 |
Semiconductor memory device having separately biased wells for isolation Grant 5,497,023 - Nakazato , et al. March 5, 1 | 1996-03-05 |
Semiconductor CMOS memory device with separately biased wells Grant 5,386,135 - Nakazato , et al. January 31, 1 | 1995-01-31 |
Method of manufacturing semiconductor integrated circuit device Grant 5,354,699 - Ikeda , et al. October 11, 1 | 1994-10-11 |
Semiconductor memory device having bipolar transistor and structure to avoid soft error Grant 5,324,982 - Nakazato , et al. June 28, 1 | 1994-06-28 |
BiCMOS semiconductor memory device using load transistors formed on an insulating film Grant 5,321,650 - Kikuchi , et al. June 14, 1 | 1994-06-14 |
Semiconductor memory device Grant 5,148,255 - Nakazato , et al. September 15, 1 | 1992-09-15 |
Semiconductor integrated circuit device Grant 5,057,894 - Ikeda , et al. October 15, 1 | 1991-10-15 |
Method of manufacturing a semiconductor device utilizing a single polycrystalline layer for all electrodes Grant 5,026,654 - Tanba , et al. June 25, 1 | 1991-06-25 |
Semiconductor circuit device having a plurality of SRAM type memory cell arrangement Grant 4,984,200 - Saitoo , et al. January 8, 1 | 1991-01-08 |
Semiconductor integrated circuit device and a method for manufacturing the same Grant 4,980,744 - Watanabe , et al. December 25, 1 | 1990-12-25 |
Semiconductor device Grant 4,963,973 - Watanabe , et al. October 16, 1 | 1990-10-16 |
Semiconductor integrated circuit device and a method for manufacturing the same Grant 4,921,811 - Watanabe , et al. May 1, 1 | 1990-05-01 |
Complementary semiconductor device Grant 4,862,240 - Watanabe , et al. August 29, 1 | 1989-08-29 |
MOS/bipolar device with stepped buried layer under active regions Grant 4,799,098 - Ikeda , et al. January 17, 1 | 1989-01-17 |
Method of making a stacked emitter in a bipolar transistor by selective laser irradiation Grant 4,377,421 - Wada , et al. March 22, 1 | 1983-03-22 |
High power semiconductor diode Grant 4,089,020 - Ikeda , et al. May 9, 1 | 1978-05-09 |
Insulated gate field effect transistor having drain region containing low impurity concentration layer Grant 4,005,450 - Yoshida , et al. January 25, 1 | 1977-01-25 |
Insulated Gate Field Effect Transistors And Method Of Producing The Same Grant 3,787,962 - Yoshida , et al. January 29, 1 | 1974-01-29 |
Method For Fabricating Semiconductor Devices By Ion Implantation Grant 3,615,875 - Morita , et al. October 26, 1 | 1971-10-26 |
Method Of Forming A Junction By Ion Implantation Grant 3,607,449 - Tokuyama , et al. September 21, 1 | 1971-09-21 |
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