Iizuka; Hisakazu
Patent Applications and Registrations
Patent applications and USPTO patent grants for Iizuka; Hisakazu.The latest application filed is for "memory having ferroelectric capacitors polarized in nonvolatile mode".
- Iizuka; Hisakazu - Yokohama JP
| Patent | Date |
|---|---|
| Memory having ferroelectric capacitors polarized in nonvolatile mode Grant 5,297,077 - Imai , et al. March 22, 1 | 1994-03-22 |
| Semiconductor memory device and method for manufacturing the same Grant 4,531,203 - Masuoka , et al. July 23, 1 | 1985-07-23 |
| Method of operating a semiconductor memory circuit Grant 4,462,090 - Iizuka July 24, 1 | 1984-07-24 |
| Method for manufacturing a semiconductor device Grant 4,406,051 - Iizuka September 27, 1 | 1983-09-27 |
| Method for fabricating a semiconductor device Grant 4,376,336 - Endo , et al. March 15, 1 | 1983-03-15 |
| Method for manufacturing a semiconductor device Grant 4,267,011 - Shibata , et al. May 12, 1 | 1981-05-12 |
| Semiconductor memory device Grant 4,115,795 - Masuoka , et al. September 19, 1 | 1978-09-19 |
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