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Patent applications and USPTO patent grants for Iguchi; Hiroko.The latest application filed is for "group iii nitride semiconductor substrate".
Patent | Date |
---|---|
Group III nitride semiconductor substrate Grant 10,868,124 - Iguchi , et al. December 15, 2 | 2020-12-15 |
Fuel cell Grant 10,727,494 - Akashi , et al. | 2020-07-28 |
Solid oxide fuel cell Grant 10,727,517 - Matsuo , et al. | 2020-07-28 |
Fuel cell Grant 10,637,078 - Funabashi , et al. | 2020-04-28 |
Group Iii Nitride Semiconductor Substrate App 20190181230 - IGUCHI; Hiroko ;   et al. | 2019-06-13 |
Solid Oxide Fuel Cell App 20180277874 - MATSUO; Hidehito ;   et al. | 2018-09-27 |
Fuel Cell App 20180277855 - AKASHI; Teruhisa ;   et al. | 2018-09-27 |
Fuel Cell App 20180248205 - FUNABASHI; Hirofumi ;   et al. | 2018-08-30 |
Semiconductor device having both IGBT area and diode area Grant 8,952,449 - Koyama , et al. February 10, 2 | 2015-02-10 |
Semiconductor device Grant 8,716,746 - Koyama , et al. May 6, 2 | 2014-05-06 |
Semiconductor Device App 20120043581 - KOYAMA; Masaki ;   et al. | 2012-02-23 |
Semiconductor Device Having Both Igbt Area And Diode Area App 20120043582 - KOYAMA; Masaki ;   et al. | 2012-02-23 |
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