Patent | Date |
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Capacitive sensor and manufacturing method therefor Grant 8,188,555 - Igarashi May 29, 2 | 2012-05-29 |
Electrostatic Drive Mems Element And Method Of Producing The Same App 20100213789 - IGARASHI; Yasushi | 2010-08-26 |
Method for fabrication MEMS-resonator Grant 7,666,700 - Igarashi February 23, 2 | 2010-02-23 |
MEMS oscillator App 20090243737 - Igarashi; Yasushi | 2009-10-01 |
Capacitive Sensor And Manufacturing Method Therefor App 20090146227 - Igarashi; Yasushi | 2009-06-11 |
Method For Fabricating Mems-resonator App 20080233673 - Igarashi; Yasushi | 2008-09-25 |
Semiconductor device and manufacturing method thereof Grant 7,256,088 - Igarashi August 14, 2 | 2007-08-14 |
Method and circuit for reading data from a ferroelectric memory cell Grant 7,120,044 - Igarashi October 10, 2 | 2006-10-10 |
Ferroelectric capacitor with dielectric lining, semiconductor memory device employing same, and fabrication methods thereof Grant 6,936,478 - Tani , et al. August 30, 2 | 2005-08-30 |
Semiconductor device and manufacturing method thereof App 20050161724 - Igarashi, Yasushi | 2005-07-28 |
Semiconductor device App 20050139917 - Igarashi, Yasushi | 2005-06-30 |
Semiconductor device and manufacturing method thereof Grant 6,911,363 - Igarashi June 28, 2 | 2005-06-28 |
Method and circuit for reading data from a ferroelectric memory cell App 20050033901 - Igarashi, Yasushi | 2005-02-10 |
Method and circuit for reading data from a ferroelectric memory cell Grant 6,834,006 - Igarashi December 21, 2 | 2004-12-21 |
Semiconductor device and method of fabricating the same Grant 6,828,189 - Igarashi December 7, 2 | 2004-12-07 |
Semiconductor memory device Grant 6,710,384 - Igarashi March 23, 2 | 2004-03-23 |
Semiconductor device and manufacturing method thereof App 20030222301 - Igarashi, Yasushi | 2003-12-04 |
Ferroelectric capacitor with dielectric lining, semiconductor memory device employing same, and fabrication methods thereof App 20030201478 - Tani, Kouichi ;   et al. | 2003-10-30 |
Structure of and manufacturing method for semiconductor device employing ferroelectric substance Grant 6,623,985 - Igarashi September 23, 2 | 2003-09-23 |
Ferroelectric capacitor with dielectric lining, semiconductor memory device employing same, and fabrication methods thereof Grant 6,600,185 - Tani , et al. July 29, 2 | 2003-07-29 |
Metal oxide capacitor with hydrogen diffusion blocking covering Grant 6,573,587 - Igarashi June 3, 2 | 2003-06-03 |
Method and circuit for reading data from a ferroelectric memory cell App 20030076117 - Igarashi, Yasushi | 2003-04-24 |
Semiconductor device and method of fabricating the same App 20030060007 - Igarashi, Yasushi | 2003-03-27 |
Apparatus for decoding receiving signal App 20030016080 - Igarashi, Yasushi | 2003-01-23 |
Read-out circuit App 20020036518 - Igarashi, Yasushi | 2002-03-28 |
Semiconductor memory device and method for the manufacture thereof App 20020017723 - Igarashi, Yasushi | 2002-02-14 |
Chromone derivative, and aldose reductase inhibitor comprising said compound as active component Grant 5,627,204 - Igarashi , et al. May 6, 1 | 1997-05-06 |