Igarashi; Yasushi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Igarashi; Yasushi.The latest application filed is for "electrostatic drive mems element and method of producing the same".

Company Profile

0.13.14

Igarashi; Yasushi - Tokyo JP
Igarashi; Yasushi - Ibaraki-ken JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Capacitive sensor and manufacturing method therefor Grant 8,188,555 - Igarashi May 29, 2	2012-05-29
Electrostatic Drive Mems Element And Method Of Producing The Same App 20100213789 - IGARASHI; Yasushi	2010-08-26
Method for fabrication MEMS-resonator Grant 7,666,700 - Igarashi February 23, 2	2010-02-23
MEMS oscillator App 20090243737 - Igarashi; Yasushi	2009-10-01
Capacitive Sensor And Manufacturing Method Therefor App 20090146227 - Igarashi; Yasushi	2009-06-11
Method For Fabricating Mems-resonator App 20080233673 - Igarashi; Yasushi	2008-09-25
Semiconductor device and manufacturing method thereof Grant 7,256,088 - Igarashi August 14, 2	2007-08-14
Method and circuit for reading data from a ferroelectric memory cell Grant 7,120,044 - Igarashi October 10, 2	2006-10-10
Ferroelectric capacitor with dielectric lining, semiconductor memory device employing same, and fabrication methods thereof Grant 6,936,478 - Tani , et al. August 30, 2	2005-08-30
Semiconductor device and manufacturing method thereof App 20050161724 - Igarashi, Yasushi	2005-07-28
Semiconductor device App 20050139917 - Igarashi, Yasushi	2005-06-30
Semiconductor device and manufacturing method thereof Grant 6,911,363 - Igarashi June 28, 2	2005-06-28
Method and circuit for reading data from a ferroelectric memory cell App 20050033901 - Igarashi, Yasushi	2005-02-10
Method and circuit for reading data from a ferroelectric memory cell Grant 6,834,006 - Igarashi December 21, 2	2004-12-21
Semiconductor device and method of fabricating the same Grant 6,828,189 - Igarashi December 7, 2	2004-12-07
Semiconductor memory device Grant 6,710,384 - Igarashi March 23, 2	2004-03-23
Semiconductor device and manufacturing method thereof App 20030222301 - Igarashi, Yasushi	2003-12-04
Ferroelectric capacitor with dielectric lining, semiconductor memory device employing same, and fabrication methods thereof App 20030201478 - Tani, Kouichi ; et al.	2003-10-30
Structure of and manufacturing method for semiconductor device employing ferroelectric substance Grant 6,623,985 - Igarashi September 23, 2	2003-09-23
Ferroelectric capacitor with dielectric lining, semiconductor memory device employing same, and fabrication methods thereof Grant 6,600,185 - Tani , et al. July 29, 2	2003-07-29
Metal oxide capacitor with hydrogen diffusion blocking covering Grant 6,573,587 - Igarashi June 3, 2	2003-06-03
Method and circuit for reading data from a ferroelectric memory cell App 20030076117 - Igarashi, Yasushi	2003-04-24
Semiconductor device and method of fabricating the same App 20030060007 - Igarashi, Yasushi	2003-03-27
Apparatus for decoding receiving signal App 20030016080 - Igarashi, Yasushi	2003-01-23
Read-out circuit App 20020036518 - Igarashi, Yasushi	2002-03-28
Semiconductor memory device and method for the manufacture thereof App 20020017723 - Igarashi, Yasushi	2002-02-14
Chromone derivative, and aldose reductase inhibitor comprising said compound as active component Grant 5,627,204 - Igarashi , et al. May 6, 1	1997-05-06

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