loadpatents
name:-0.008944034576416
name:-0.0095019340515137
name:-0.00064897537231445
Idota; Ken Patent Filings

Idota; Ken

Patent Applications and Registrations

Patent applications and USPTO patent grants for Idota; Ken.The latest application filed is for "bipolar transistor and method for fabricating the same".

Company Profile
0.7.6
  • Idota; Ken - Toyama JP
  • Idota; Ken - Moriguchi JP
  • Idota; Ken - Osaka JP
  • Idota; Ken - Moriguchi-shi JP
  • Idota; Ken - Kawasaki JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Bipolar Transistor And Method For Fabricating The Same
App 20100283084 - Ohnishi; Teruhito ;   et al.
2010-11-11
Heterojunction biploar transistor and method for manufacturing same
Grant 7,719,031 - Saitoh , et al. May 18, 2
2010-05-18
Bipolar transistor and method for fabricating the same
Grant 7,465,969 - Ohnishi , et al. December 16, 2
2008-12-16
Heterojunction bipolar transistor and method for manufacturing same
App 20070085167 - Saitoh; Tohru ;   et al.
2007-04-19
Bipolar transistor and method for fabricating the same
App 20060226446 - Ohnishi; Teruhito ;   et al.
2006-10-12
Bipolar transistor and method for fabricating the same
Grant 7,091,099 - Ohnishi , et al. August 15, 2
2006-08-15
Method of producing semiconductor crystal
Grant 6,987,072 - Kanzawa , et al. January 17, 2
2006-01-17
Method of fabricating a bipolar transistor utilizing a dry etching and a wet etching to define a base junction opening
Grant 6,927,118 - Idota , et al. August 9, 2
2005-08-09
Method for fabricating a semiconductor crystal
App 20050092230 - Kanzawa, Yoshihiko ;   et al.
2005-05-05
Method for fabricating a semiconductor crystal
Grant 6,838,395 - Kanzawa , et al. January 4, 2
2005-01-04
Bipolar transistor and method for fabricating the same
App 20040195655 - Ohnishi, Teruhito ;   et al.
2004-10-07
Semiconductor device and fabrication method thereof
App 20040092076 - Idota, Ken ;   et al.
2004-05-13
Method for fabricating a semiconductor laser device using (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P semiconductor clad layers
Grant 5,194,400 - Takamori , et al. March 16, 1
1993-03-16

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