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Patent applications and USPTO patent grants for Hwang; Min-wook.The latest application filed is for "safety cap".
Patent | Date |
---|---|
Safety Cap App 20130221007 - Jung; Seo-hui ;   et al. | 2013-08-29 |
Method of fabricating semiconductor device for reducing parasitic capacitance between bit lines and semiconductor device fabricated thereby Grant 8,022,455 - Hwang September 20, 2 | 2011-09-20 |
Method Of Fabricating Semiconductor Device For Reducing Parasitic Capacitance Between Bit Lines And Semiconductor Device Fabricated Thereby App 20100181672 - Hwang; Min-Wook | 2010-07-22 |
Method of fabricating semiconductor device for reducing parasitic capacitance between bit lines and semiconductor device fabricated thereby Grant 7,579,233 - Hwang August 25, 2 | 2009-08-25 |
Method of fabricating semiconductor device for reducing parasitic capacitance between bit lines and semiconductor device fabricated thereby App 20060148134 - Hwang; Min-Wook | 2006-07-06 |
Methods of forming field oxide isolation regions with reduced susceptibility to polysilicon residue defects Grant 5,837,595 - Ahn , et al. November 17, 1 | 1998-11-17 |
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