Hwang; Jeonghyun
Patent Applications and Registrations
Patent applications and USPTO patent grants for Hwang; Jeonghyun.The latest application filed is for "transistor with multi-level self-aligned gate and source/drain terminals and methods".
- Hwang; Jeonghyun - Ithaca NY
| Patent | Date |
|---|---|
| Transistor With Multi-level Self-aligned Gate And Source/drain Terminals And Methods App 20220223694 - Kantarovsky; Johnatan A. ; et al. | 2022-07-14 |
| Implanted Isolation For Device Integration On A Common Substrate App 20220173233 - Adusumilli; Siva P. ; et al. | 2022-06-02 |
| Symmetric Arrangement Of Field Plates In Semiconductor Devices App 20220165853 - KANTAROVSKY; JOHNATAN AVRAHAM ; et al. | 2022-05-26 |
| Symmetric arrangement of field plates in semiconductor devices Grant 11,316,019 - Kantarovsky , et al. April 26, 2 | 2022-04-26 |
| DEVICE INTEGRATION SCHEMES LEVERAGING A BULK SEMICONDUCTOR SUBSTRATE HAVING A <111> CRYSTAL ORIENTATION App 20220122963 - Levy; Mark ; et al. | 2022-04-21 |
| Integrated Circuit Structure With Semiconductor-based Isolation Structure And Methods To Form Same App 20220044960 - Stamper; Anthony K. ; et al. | 2022-02-10 |
| Symmetric Arrangement Of Field Plates In Semiconductor Devices App 20220037482 - KANTAROVSKY; JOHNATAN AVRAHAM ; et al. | 2022-02-03 |
| Heterojunction Bipolar Transistor App 20210384297 - ALDRIDGE, JR.; Henry L. ; et al. | 2021-12-09 |
| Integrated circuit structure with semiconductor-based isolation structure and methods to form same Grant 11,177,158 - Stamper , et al. November 16, 2 | 2021-11-16 |
| Heterojunction bipolar transistor Grant 11,177,345 - Aldridge, Jr. , et al. November 16, 2 | 2021-11-16 |
| Integrated Circuit Structure With Semiconductor-based Isolation Structure And Methods To Form Same App 20210265198 - Stamper; Anthony K. ; et al. | 2021-08-26 |
| Highly doped III-nitride semiconductors Grant 7,993,938 - Schaff , et al. August 9, 2 | 2011-08-09 |
| Method of forming an AlN coated heterojunction field effect transistor Grant 7,622,322 - Schaff , et al. November 24, 2 | 2009-11-24 |
| Highly Doped Iii-nitride Semiconductors App 20090165816 - Schaff; William J. ; et al. | 2009-07-02 |
| Highly doped III-nitride semiconductors Grant 7,485,901 - Schaff , et al. February 3, 2 | 2009-02-03 |
| Highly doped III-nitride semiconductors Grant 7,482,191 - Schaff , et al. January 27, 2 | 2009-01-27 |
| Highly doped III-nitride semiconductors Grant 6,953,740 - Schaff , et al. October 11, 2 | 2005-10-11 |
| Highly doped III-nitride semiconductors App 20050179047 - Schaff, William J. ; et al. | 2005-08-18 |
| Highly doped III-nitride semiconductors App 20050179050 - Schaff, William J. ; et al. | 2005-08-18 |
| Highly doped III-nitride semiconductors Grant 6,888,170 - Schaff , et al. May 3, 2 | 2005-05-03 |
| Highly doped III-nitride semiconductors App 20030176003 - Schaff, William J. ; et al. | 2003-09-18 |
| Highly doped III-nitride semiconductors App 20030173578 - Schaff, William J. ; et al. | 2003-09-18 |
| AIN coated heterojunction field effect transistor and method of forming an AIN coating App 20020137236 - Schaff, William J. ; et al. | 2002-09-26 |
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