HWANG; Inchan
Patent Applications and Registrations
Patent applications and USPTO patent grants for HWANG; Inchan.The latest application filed is for "sram memory cell for stacked transistors with different channel width".
- HWANG; Inchan - Schenectady NY
- HWANG; INCHAN - Siheung-si KR
| Patent | Date |
|---|---|
| Sram Memory Cell For Stacked Transistors With Different Channel Width App 20220302134 - HWANG; Inchan ; et al. | 2022-09-22 |
| Array of multi-stack nanosheet structures Grant 11,437,369 - Hwang , et al. September 6, 2 | 2022-09-06 |
| Static Random Access Memory Of 3d Stacked Devices App 20220246623 - HWANG; Inchan ; et al. | 2022-08-04 |
| Stacked Semiconductor Device Having Mirror-symmetric Pattern App 20220231013 - Hong; Byounghak ; et al. | 2022-07-21 |
| Array Of Multi-stack Nanosheet Structures And Method Of Manufacturing The Same App 20220108981 - HWANG; Inchan ; et al. | 2022-04-07 |
| Semiconductor Device Having Stepped Multi-stack Transistor Structure App 20220109046 - HONG; Byounghak ; et al. | 2022-04-07 |
| Crossing Multi-stack Nanosheet Structure And Method Of Manufacturing The Same App 20220109047 - JUN; Hwichan ; et al. | 2022-04-07 |
| Semiconductor Device App 20220020860 - LEE; DOOHYUN ; et al. | 2022-01-20 |
| Semiconductor device Grant 11,177,362 - Lee , et al. November 16, 2 | 2021-11-16 |
| Semiconductor Device Having Silicides And Methods Of Manufacturing The Same App 20210193808 - HWANG; Inchan ; et al. | 2021-06-24 |
| Semiconductor device having silicides and methods of manufacturing the same Grant 10,964,791 - Hwang , et al. March 30, 2 | 2021-03-30 |
| Semiconductor Device App 20210057536 - LEE; DOOHYUN ; et al. | 2021-02-25 |
| Integrated circuit device Grant 10,522,537 - Kim , et al. Dec | 2019-12-31 |
| Semiconductor Device App 20190206867 - LEE; Jung Han ; et al. | 2019-07-04 |
| Semiconductor Device App 20190157406 - HWANG; Inchan ; et al. | 2019-05-23 |
| Semiconductor devices Grant 10,115,806 - Kim , et al. October 30, 2 | 2018-10-30 |
| Integrated circuit device with gate line crossing fin-type active region Grant 10,043,800 - Kim , et al. August 7, 2 | 2018-08-07 |
| Integrated Circuit Device App 20180219010 - KIM; CHANGHWA ; et al. | 2018-08-02 |
| Integrated Circuit Device With Gate Line Crossing Fin-type Active Region App 20180083002 - KIM; CHANGHWA ; et al. | 2018-03-22 |
| Semiconductor Devices App 20170033048 - KIM; Chang-Hwa ; et al. | 2017-02-02 |
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