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name:-0.010875940322876
name:-0.0056781768798828
name:-0.0067849159240723
HWANG; Ho-yung Patent Filings

HWANG; Ho-yung

Patent Applications and Registrations

Patent applications and USPTO patent grants for HWANG; Ho-yung.The latest application filed is for "tin oxide and tin carbide materials for semiconductor patterning applications".

Company Profile
8.5.10
  • HWANG; Ho-yung - Cupertino CA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Tin Oxide And Tin Carbide Materials For Semiconductor Patterning Applications
App 20220189786 - LIN; Yung-chen ;   et al.
2022-06-16
Dose Reduction Of Patterned Metal Oxide Photoresists
App 20210033974 - SINGH; Tejinder ;   et al.
2021-02-04
Selectively etched self-aligned via processes
Grant 10,840,138 - Lin , et al. November 17, 2
2020-11-17
Methods of producing self-aligned grown via
Grant 10,573,555 - Zhang , et al. Feb
2020-02-25
Methods of producing fully self-aligned vias and contacts
Grant 10,553,485 - Zhang , et al. Fe
2020-02-04
Fully self-aligned via
Grant 10,522,404 - Zhang , et al. Dec
2019-12-31
Fully Self-Aligned Via
App 20190348323 - Zhang; Ying ;   et al.
2019-11-14
Fully self-aligned via
Grant 10,424,507 - Zhang , et al. Sept
2019-09-24
Multicolor Self-Aligned Contact Selective Etch
App 20190279901 - Lin; Yung-Chen ;   et al.
2019-09-12
Selectively Etched Self-aligned Via Processes
App 20190088543 - Lin; Yung-Chen ;   et al.
2019-03-21
Methods Of Producing Self-Aligned Vias
App 20190074219 - Zhang; Ying ;   et al.
2019-03-07
Methods Of Producing Self-aligned Grown Via
App 20190067103 - Zhang; Ying ;   et al.
2019-02-28
Mask Scheme For Cut Pattern Flow With Enlarged EPE Window
App 20190019676 - Zhang; Ying ;   et al.
2019-01-17
Methods Of Producing Fully Self-Aligned Vias And Contacts
App 20180374750 - Zhang; Ying ;   et al.
2018-12-27
Fully Self-Aligned Via
App 20180286749 - Zhang; Ying ;   et al.
2018-10-04

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