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name:-0.019838094711304
name:-0.01478099822998
name:-0.013671875
HWANG; Eui Chul Patent Filings

HWANG; Eui Chul

Patent Applications and Registrations

Patent applications and USPTO patent grants for HWANG; Eui Chul.The latest application filed is for "semiconductor device and method for fabricating the same".

Company Profile
10.18.24
  • HWANG; Eui Chul - Seoul KR
  • HWANG; Eui Chul - Hwaseong-si KR
  • Hwang; Eui-chul - Seongnam-si KR
  • Hwang; Eui-chul - State College PA US
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Semiconductor Device And Method For Fabricating The Same
App 20210366905 - YOO; Sang Min ;   et al.
2021-11-25
Method For Fabricating A Semiconductor Device
App 20210265351 - Hwang; Eui Chul ;   et al.
2021-08-26
Semiconductor devices
Grant 11,063,150 - Yoo , et al. July 13, 2
2021-07-13
Semiconductor device including gate structure having device isolation film
Grant 11,011,519 - Hwang , et al. May 18, 2
2021-05-18
Semiconductor Devices Including Diffusion Break Regions
App 20210118885 - PARK; Jun Mo ;   et al.
2021-04-22
Semiconductor devices including diffusion break regions
Grant 10,910,376 - Park , et al. February 2, 2
2021-02-02
Semiconductor Device And Method For Fabricating The Same
App 20210005603 - YOO; Sang Min ;   et al.
2021-01-07
Semiconductor device and method for fabricating the same
Grant 10,804,265 - Yoo , et al. October 13, 2
2020-10-13
FINFETs having electrically insulating diffusion break regions therein and methods of forming same
Grant 10,636,793 - Na , et al.
2020-04-28
Semiconductor Devices
App 20200105919 - YOO; Sang-Min ;   et al.
2020-04-02
Semiconductor Devices Including Diffusion Break Regions
App 20200058652 - PARK; Jun Mo ;   et al.
2020-02-20
Semiconductor Device And Method For Fabricating The Same
App 20200043929 - HWANG; Eui Chul ;   et al.
2020-02-06
Semiconductor Device And Method For Fabricating The Same
App 20200043920 - YOO; Sang Min ;   et al.
2020-02-06
Finfets Having Electrically Insulating Diffusion Break Regions Therein And Methods Of Forming Same
App 20190393220 - Na; Hyung Joo ;   et al.
2019-12-26
Semiconductor device and method of fabricating the same
Grant 9,929,239 - Lee , et al. March 27, 2
2018-03-27
Method of manufacturing a semiconductor device including a gate electrode on a protruding group III-V material layer
Grant 9,666,706 - Cho , et al. May 30, 2
2017-05-30
Semiconductor Device Including A Gate Electrode On A Protruding Group Iii-v Material Layer And Method Of Manufacturing The Semiconductor Device
App 20160322488 - CHO; Young-jin ;   et al.
2016-11-03
Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor device
Grant 9,419,094 - Cho , et al. August 16, 2
2016-08-16
Semiconductor Device Including A Gate Electrode On A Protruding Group Iii-v Material Layer And Method Of Manufacturing The Semiconductor Device
App 20160197161 - CHO; Young-jin ;   et al.
2016-07-07
Semiconductor Device And Method Of Fabricating The Same
App 20160172450 - LEE; Dong-soo ;   et al.
2016-06-16
Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor device
Grant 9,343,564 - Cho , et al. May 17, 2
2016-05-17
Semiconductor device including a gate electrode on a protruding group III-V material layer
Grant 9,324,852 - Cho , et al. April 26, 2
2016-04-26
Semiconductor device and method of fabricating the same
Grant 9,306,008 - Lee , et al. April 5, 2
2016-04-05
Semiconductor Device Including A Gate Electrode On A Protruding Group Iii-v Material Layer And Method Of Manufacturing The Semiconductor Device
App 20150255592 - CHO; Young-jin ;   et al.
2015-09-10
Semiconductor device and method of fabricating the same
Grant 9,099,304 - Lee , et al. August 4, 2
2015-08-04
Semiconductor Device Including A Gate Electrode On A Protruding Group Iii-v Material Layer And Method Of Manufacturing The Semiconductor Device
App 20150200285 - CHO; Young-jin ;   et al.
2015-07-16
Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor device
Grant 9,070,706 - Cho , et al. June 30, 2
2015-06-30
Semiconductor Device And Method Of Fabricating The Same
App 20150061088 - LEE; Dong-soo ;   et al.
2015-03-05
Semiconductor Structure Including Metal Silicide Buffer Layers And Methods Of Fabricating The Same
App 20150061030 - Uddin; Mohammad Rakib ;   et al.
2015-03-05
Semiconductor Device And Method Of Fabricating The Same
App 20150028458 - Lee; Dong-soo ;   et al.
2015-01-29
Semiconductor Device Including Group Iii-v Barrier And Method Of Manufacturing The Semiconductor Device
App 20130119347 - CHO; Young-jin ;   et al.
2013-05-16

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