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HWANG; Doo-Sup Patent Filings

HWANG; Doo-Sup

Patent Applications and Registrations

Patent applications and USPTO patent grants for HWANG; Doo-Sup.The latest application filed is for "method of forming storage node of capacitor in semiconductor memory, and structure therefor".

Company Profile
0.7.8
  • HWANG; Doo-Sup - Gyeonggi-do
  • Hwang; Doo-sup - Kyungki-do KR
  • Hwang; Doo-sup - Yongin KR
  • Hwang, Doo-sup - Yongin-city KR
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Method Of Forming Storage Node Of Capacitor In Semiconductor Memory, And Structure Therefor
App 20060199332 - PARK; Je-Min ;   et al.
2006-09-07
Method of forming storage node of capacitor in semiconductor memory, and structure therefore
Grant 7,074,670 - Park , et al. July 11, 2
2006-07-11
Method for manufacturing semiconductor devices and integrated circuit capacitors whereby degradation of surface morphology of a metal layer from thermal oxidation is suppressed
Grant 6,927,166 - Chung , et al. August 9, 2
2005-08-09
Method of forming storage node of capacitor in semiconductor memory, and structure therefore
App 20050032304 - Park, Je-Min ;   et al.
2005-02-10
Method for manufacturing capacitor of semiconductor memory device controlling thermal budget
Grant 6,815,221 - Kim , et al. November 9, 2
2004-11-09
Methods for forming capacitors on semiconductor substrates
Grant 6,806,183 - Kang , et al. October 19, 2
2004-10-19
Method for manufacturing semiconductor devices and integrated circuit capacitors whereby degradation of surface morphology of a metal layer from thermal oxidation is suppressed
App 20040097033 - Chung, Eun-ae ;   et al.
2004-05-20
Method for manufacturing a semiconductor device whereby degradation of surface morphology of a metal layer from thermal oxidation is suppressed
Grant 6,683,001 - Chung , et al. January 27, 2
2004-01-27
Mask for the selective growth of a solid, a manufacturing method for the mask, and a method for selectively growing a solid using the mask
Grant 6,596,186 - Yasuda , et al. July 22, 2
2003-07-22
Methods for forming capacitors on semiconductor substrates
App 20030096472 - Kang, Chang-Seok ;   et al.
2003-05-22
Method for manufacturing capacitor of semiconductor memory device controlling thermal budget
App 20030054605 - Kim, Wan-don ;   et al.
2003-03-20
Method for manufacturing a semiconductor device whereby degradation of surface morphology of a metal layer from thermal oxidation is suppressed
App 20020146913 - Chung, Eun-ae ;   et al.
2002-10-10
Method for manufacturing capacitor of semiconductor memory device by two-step thermal treatment
App 20020076878 - Won, Seok-Jun ;   et al.
2002-06-20
Mask for the selective growth of a solid, a manufacturing method for the mask, and a method for selectively growing a solid using the mask
App 20020028322 - Yasuda, Tetsuji ;   et al.
2002-03-07
Methods of forming integrated circuit capacitors using metal reflow techniques
Grant 6,001,660 - Park , et al. December 14, 1
1999-12-14

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