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Patent applications and USPTO patent grants for HUNG; Tsungyu.The latest application filed is for "epitaxial structure for source/drain contact".
Patent | Date |
---|---|
Epitaxial Structure For Source/drain Contact App 20220293760 - HUNG; Tsungyu ;   et al. | 2022-09-15 |
Epitaxial Backside Contact App 20210399099 - Chu; Chia-Hung ;   et al. | 2021-12-23 |
Semiconductor Device With Isolation Structures App 20210265220 - LEE; Pei-Wei ;   et al. | 2021-08-26 |
Self-Aligned Inner Spacer on Gate-All-Around Structure and Methods of Forming the Same App 20210175345 - Hung; Tsungyu ;   et al. | 2021-06-10 |
Self-aligned inner spacer on gate-all-around structure and methods of forming the same Grant 10,930,755 - Hung , et al. February 23, 2 | 2021-02-23 |
Semiconductor structure and manufacturing method for the same Grant 10,879,131 - Hung , et al. December 29, 2 | 2020-12-29 |
Self-Aligned Inner Spacer on Gate-All-Around Structure and Methods of Forming the Same App 20200168722 - Hung; Tsungyu ;   et al. | 2020-05-28 |
Semiconductor Structure And Manufacturing Method For The Same App 20200043806 - HUNG; TSUNGYU ;   et al. | 2020-02-06 |
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