Hung; Steven C. H.
Patent Applications and Registrations
Patent applications and USPTO patent grants for Hung; Steven C. H..The latest application filed is for "treatments to enhance material structures".
Company Profile
10.15.28
- Hung; Steven C. H. - Sunnyvale CA
Patent Activity
| Patent | Date |
|---|---|
| Gate interface engineering with doped layer Grant 11,456,178 - Hung , et al. September 27, 2 | 2022-09-27 |
| Gate all around I/O engineering Grant 11,450,759 - Hung , et al. September 20, 2 | 2022-09-20 |
| Treatments To Enhance Material Structures App 20220262629 - GANDIKOTA; Srinivas ; et al. | 2022-08-18 |
| Treatments to enhance material structures Grant 11,417,517 - Gandikota , et al. August 16, 2 | 2022-08-16 |
| Mosfet Gate Engineerinng With Dipole Films App 20220254900 - Yang; Yong ; et al. | 2022-08-11 |
| Amorphous Silicon-Based Scavenging And Sealing EOT App 20220254640 - Yang; Yong ; et al. | 2022-08-11 |
| Threshold Voltage Modulation For Gate-all-around Fet Architecture App 20220238680 - HUNG; Steven C. H. ; et al. | 2022-07-28 |
| P-Type Dipole For P-FET App 20220165854 - Lin; Yongjing ; et al. | 2022-05-26 |
| Metal Based Hydrogen Barrier App 20220157654 - Gandikota; Srinivas ; et al. | 2022-05-19 |
| Integrated Dipole Flow For Transistor App 20220115516 - Lin; Yongjing ; et al. | 2022-04-14 |
| P-type dipole for p-FET Grant 11,289,579 - Lin , et al. March 29, 2 | 2022-03-29 |
| Pmos High-k Metal Gates App 20220077298 - GANDIKOTA; SRINIVAS ; et al. | 2022-03-10 |
| Integrated dipole flow for transistor Grant 11,245,022 - Lin , et al. February 8, 2 | 2022-02-08 |
| Gate Interface Engineering With Doped Layer App 20210398814 - Hung; Steven C. H. ; et al. | 2021-12-23 |
| Diffusion barrier layer Grant 11,189,479 - Colombeau , et al. November 30, 2 | 2021-11-30 |
| Fluorine-doped nitride films for improved high-k reliability Grant 11,171,047 - Yang , et al. November 9, 2 | 2021-11-09 |
| Treatments To Improve Device Performance App 20210193468 - Hung; Steven C.H. ; et al. | 2021-06-24 |
| PMOS High-K Metal Gates App 20210134972 - Yang; Yixiong ; et al. | 2021-05-06 |
| Treatments To Enhance Material Structures App 20210111020 - GANDIKOTA; Srinivas ; et al. | 2021-04-15 |
| Gate All Around I/O Engineering App 20210104617 - Hung; Steven C.H. ; et al. | 2021-04-08 |
| P-Type Dipole For P-FET App 20210098581 - Lin; Yongjing ; et al. | 2021-04-01 |
| Treatments To Enhance Material Structures App 20210057215 - HUNG; Steven C. H. | 2021-02-25 |
| Fluorine-Doped Nitride Films for Improved High-K Reliability App 20200411373 - Yang; Yixiong ; et al. | 2020-12-31 |
| Metal Based Hydrogen Barrier App 20200373200 - Gandikota; Srinivas ; et al. | 2020-11-26 |
| Integrated Dipole Flow For Transistor App 20200373404 - Lin; Yongjing ; et al. | 2020-11-26 |
| Diffusion Barrier Layer App 20200357629 - Colombeau; Benjamin ; et al. | 2020-11-12 |
| Methods Of Forming Silicon-Containing Layers App 20200075332 - Swenberg; Johanes F. ; et al. | 2020-03-05 |
| Hydrogenation and nitridization processes for modifying effective oxide thickness of a film Grant 10,510,545 - Graoui , et al. Dec | 2019-12-17 |
| Hydrogenation and nitridization processes for modifying effective oxide thickness of a film Grant 10,431,466 - Swenberg , et al. O | 2019-10-01 |
| Modifying Work Function Of A Metal Film With A Plasma Process App 20190287805 - HUNG; Steven C. H. ; et al. | 2019-09-19 |
| Modifying work function of a metal film with a plasma process Grant 10,347,492 - Hung , et al. July 9, 2 | 2019-07-09 |
| Modifying Work Function Of A Metal Film With A Plasma Process App 20180218911 - HUNG; Steven C. H. ; et al. | 2018-08-02 |
| Multi-threshold voltage structures with a lanthanum nitride film and methods of formation thereof Grant 9,748,354 - Tang , et al. August 29, 2 | 2017-08-29 |
| Multi-threshold Voltage Structures With A Lanthanum Nitride Film And Methods Of Formation Thereof App 20170179252 - TANG; Wei V. ; et al. | 2017-06-22 |
| Engineering induced tunable electrostatic effect Grant 9,437,640 - Mings , et al. September 6, 2 | 2016-09-06 |
| Method of adjusting a transistor gate flat band voltage with addition of AL.sub.20.sub.3 on nitrided silicon channel Grant 9,275,853 - Sato , et al. March 1, 2 | 2016-03-01 |
| Engineering Induced Tunable Electrostatic Effect App 20150069476 - Mings; Sherry ; et al. | 2015-03-12 |
| METHOD OF ADJUSTING A TRANSISTOR GATE FLAT BAND VOLTAGE WITH ADDITION OF Al203 ON NITRIDED SILICON CHANNEL App 20150031196 - SATO; Tatsuya ; et al. | 2015-01-29 |
| Gate electrode structures Grant 7,541,650 - Hung , et al. June 2, 2 | 2009-06-02 |
| Gate Electrode Structures App 20080142893 - Hung; Steven C. H. ; et al. | 2008-06-19 |
| Gate electrode structures and methods of manufacture Grant 7,317,229 - Hung , et al. January 8, 2 | 2008-01-08 |
| Gate Electrode structures and methods of manufacture App 20070018244 - Hung; Steven C. H. ; et al. | 2007-01-25 |
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